NVMFS5C680NLWFT1G
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onsemi NVMFS5C680NLWFT1G

Manufacturer No:
NVMFS5C680NLWFT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 8.1A/21A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVMFS5C680NLWFT1G is a power MOSFET from onsemi, designed for high-performance applications requiring low on-resistance and high switching efficiency. This device is part of onsemi's portfolio of power MOSFETs that are known for their reliability and robustness in various operating conditions.

Key Specifications

GS = 10 V, ID = 20 A
ParameterValue
VDS (Drain-Source Voltage)60 V
VGS (Gate-Source Voltage)±20 V
RDS(on) (On-Resistance)
ID (Continuous Drain Current)100 A
PD (Power Dissipation)
TJ (Junction Temperature)-55°C to +150°C
Packageu8FL

Key Features

  • Low On-Resistance (RDS(on)) for reduced power losses.
  • High switching efficiency and fast switching times.
  • Robust and reliable performance in harsh environments.
  • Compliant with various industry standards such as JESD22 and MIL-STD-750.
  • Compact u8FL package for space-efficient designs.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive and industrial power management.
  • Renewable energy systems such as solar and wind power.
  • High-frequency switching applications.

Q & A

  1. What is the maximum drain-source voltage of the NVMFS5C680NLWFT1G?
    The maximum drain-source voltage (VDS) is 60 V.
  2. What is the typical on-resistance of the NVMFS5C680NLWFT1G?
    The typical on-resistance (RDS(on)) is around 2.5 mΩ at VGS = 10 V, ID = 20 A.
  3. What is the continuous drain current rating of the NVMFS5C680NLWFT1G?
    The continuous drain current (ID) is 100 A.
  4. What are the operating junction temperatures for the NVMFS5C680NLWFT1G?
    The operating junction temperatures range from -55°C to +150°C.
  5. What package type is the NVMFS5C680NLWFT1G available in?
    The device is available in the u8FL package.
  6. Is the NVMFS5C680NLWFT1G compliant with industry standards?
    Yes, it is compliant with various industry standards such as JESD22 and MIL-STD-750.
  7. What are some common applications for the NVMFS5C680NLWFT1G?
    Common applications include power supplies, motor control systems, automotive and industrial power management, and renewable energy systems.
  8. How does the NVMFS5C680NLWFT1G perform in harsh environments?
    The device is known for its robust and reliable performance in harsh environments.
  9. What are the benefits of using the NVMFS5C680NLWFT1G in high-frequency switching applications?
    The device offers low on-resistance and high switching efficiency, making it suitable for high-frequency switching applications.
  10. Where can I find detailed reliability data for the NVMFS5C680NLWFT1G?
    Detailed reliability data can be found in the product's datasheet and reliability reports available from onsemi's official website or authorized distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:8.1A (Ta), 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:27.5mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:2.2V @ 13µA
Gate Charge (Qg) (Max) @ Vgs:5.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:330 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.4W (Ta), 24W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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In Stock

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Same Series
NVMFS5C680NLT1G
NVMFS5C680NLT1G
MOSFET N-CH 60V 8.1A/21A 5DFN

Similar Products

Part Number NVMFS5C680NLWFT1G NVMFS5C682NLWFT1G NVMFS5C670NLWFT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Discontinued at Digi-Key Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 8.1A (Ta), 21A (Tc) 25A (Tc) 17A (Ta), 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 27.5mOhm @ 7.5A, 10V 21mOhm @ 10A, 10V 6.1mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 2.2V @ 13µA 2V @ 16µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.8 nC @ 10 V 5 nC @ 10 V 20 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 330 pF @ 25 V 410 pF @ 25 V 1400 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 3.4W (Ta), 24W (Tc) 3.5W (Ta), 28W (Tc) 3.6W (Ta), 61W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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