NVMFS5C673NLWFAFT1G
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onsemi NVMFS5C673NLWFAFT1G

Manufacturer No:
NVMFS5C673NLWFAFT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CHANNEL 60V 50A 5DFN
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The NVMFS5C673NLWFAFT1G is an automotive Power MOSFET designed and manufactured by onsemi. This single N-Channel Power MOSFET is housed in a compact 5x6mm flat lead package, making it ideal for efficient and space-saving designs. The device features high thermal performance and is AEC-Q101 qualified, ensuring its suitability for various automotive applications. Additionally, it is PPAP capable and offers a wettable flank option for enhanced optical inspection, making it compliant with Pb-Free and RoHS standards.

Key Specifications

Parameter Value
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V
ID - Continuous Drain Current 50 A
Rds(on) Max @ Vgs = 10 V 9.2 mΩ
Vgs - Gate-Source Voltage ±20 V
Vgs(th) Max - Gate Threshold Voltage 2 V
Package / Case DFNW5 4.90x5.90x1.00, 1.27P
Operating Temperature Range -55°C to 150°C

Key Features

  • High thermal performance in a compact 5x6mm flat lead package.
  • Low Rds(on) of 9.2 mΩ at Vgs = 10 V.
  • Low Qg and gate capacitance.
  • AEC-Q101 qualified and PPAP capable for automotive reliability.
  • Wettable Flank Option available for enhanced optical inspection.
  • Pb-Free and RoHS compliant.

Applications

  • Reverse Battery Protection
  • Switching Power Supplies
  • Power Switches (High Side Driver, H-Bridges, etc.)
  • Solenoid Drivers – ABS, Fuel Injection
  • Motor Control – EPS, Wipers, Fans, Seats, etc.
  • Load Switch – ECU, Chassis, Body

Q & A

  1. What is the maximum drain-source breakdown voltage of the NVMFS5C673NLWFAFT1G?

    The maximum drain-source breakdown voltage is 60 V.

  2. What is the continuous drain current rating of this MOSFET?

    The continuous drain current rating is 50 A.

  3. What is the typical on-resistance (Rds(on)) at Vgs = 10 V?

    The typical on-resistance (Rds(on)) at Vgs = 10 V is 9.2 mΩ.

  4. Is the NVMFS5C673NLWFAFT1G AEC-Q101 qualified?

    Yes, it is AEC-Q101 qualified and PPAP capable.

  5. What package type does the NVMFS5C673NLWFAFT1G come in?

    The device is housed in a DFNW5 4.90x5.90x1.00, 1.27P package.

  6. Is the NVMFS5C673NLWFAFT1G Pb-Free and RoHS compliant?

    Yes, it is Pb-Free and RoHS compliant.

  7. What are some common applications for this MOSFET?

    Common applications include reverse battery protection, switching power supplies, power switches, solenoid drivers, motor control, and load switches.

  8. Does the NVMFS5C673NLWFAFT1G have a wettable flank option?

    Yes, it has a wettable flank option available for enhanced optical inspection.

  9. What is the operating temperature range of the NVMFS5C673NLWFAFT1G?

    The operating temperature range is -55°C to 150°C.

  10. What are the benefits of the low Rds(on) and low Qg in this MOSFET?

    The low Rds(on) and low Qg reduce power losses and improve switching efficiency.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2V @ 35µA
Gate Charge (Qg) (Max) @ Vgs:9.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:880 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):46W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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In Stock

$1.80
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Same Series
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NVMFS5C673NLWFAFT3G
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NVMFS5C673NLT1G
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NVMFS5C673NLT3G
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NVMFS5C673NLWFT1G
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NVMFS5C673NLWFT3G
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Similar Products

Part Number NVMFS5C673NLWFAFT1G NVMFS5C673NLWFAFT3G NVMFS5C670NLWFAFT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Not For New Designs Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 50A (Tc) 17A (Ta), 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.2mOhm @ 25A, 10V 9.2mOhm @ 25A, 10V 6.1mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 2V @ 35µA 2V @ 35µA 2V @ 53µA
Gate Charge (Qg) (Max) @ Vgs 9.5 nC @ 10 V 9.5 nC @ 10 V 20 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 880 pF @ 25 V 880 pF @ 25 V 1400 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 46W (Tc) 46W (Tc) 61W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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