Overview
The NVMFS5C670NLWFAFT1G is a high-performance N-Channel MOSFET produced by onsemi. This device is designed for applications requiring high current handling and low on-resistance. It features a compact DFN5/DFNW5 package, making it ideal for space-constrained designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards. It is also Pb-free and RoHS compliant, aligning with environmental regulations.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TJ = 25°C) | ID | 71 | A |
| Continuous Drain Current (TJ = 100°C) | ID | 50 | A |
| Power Dissipation (TJ = 25°C) | PD | 61 | W |
| Power Dissipation (TJ = 100°C) | PD | 31 | W |
| Pulsed Drain Current | IDM | 440 | A |
| Operating Junction and Storage Temperature | TJ, Tstg | −55 to +175 | °C |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 35 A) | RDS(on) | 6.1 mΩ | mΩ |
| Drain-to-Source On Resistance (VGS = 4.5 V, ID = 35 A) | RDS(on) | 8.8 mΩ | mΩ |
Key Features
- Small Footprint: The device comes in a compact DFN5/DFNW5 package (5x6 mm), ideal for space-constrained designs.
- Low RDS(on): Offers low on-resistance of 6.1 mΩ at VGS = 10 V and ID = 35 A, minimizing conduction losses.
- Low QG and Capacitance: Low total gate charge and capacitance reduce driver losses.
- Wettable Flank Option: The NVMFS5C670NLWF version includes wettable flanks for enhanced optical inspection.
- AEC-Q101 Qualified and PPAP Capable: Ensures reliability and compliance with automotive standards.
- Pb-Free and RoHS Compliant: Aligns with environmental regulations.
Applications
The NVMFS5C670NLWFAFT1G is suitable for a variety of high-current applications, including:
- Automotive systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive power management and control systems.
- Power supplies: High current handling and low on-resistance make it suitable for high-power supply designs.
- Motor control: Used in motor drive applications requiring high current and low losses.
- Industrial control: Suitable for industrial control systems that require reliable and efficient power switching.
Q & A
- What is the maximum drain-to-source voltage of the NVMFS5C670NLWFAFT1G?
The maximum drain-to-source voltage (VDSS) is 60 V.
- What is the continuous drain current at TJ = 25°C?
The continuous drain current at TJ = 25°C is 71 A.
- What is the on-resistance of the MOSFET at VGS = 10 V and ID = 35 A?
The on-resistance (RDS(on)) at VGS = 10 V and ID = 35 A is 6.1 mΩ.
- Is the NVMFS5C670NLWFAFT1G Pb-free and RoHS compliant?
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is −55 to +175°C.
- What is the pulsed drain current rating?
The pulsed drain current (IDM) is 440 A.
- What package types are available for this MOSFET?
The device is available in DFN5 and DFNW5 packages.
- Is the NVMFS5C670NLWFAFT1G AEC-Q101 qualified?
- What are some typical applications for this MOSFET?
Typical applications include automotive systems, power supplies, motor control, and industrial control systems.
- What is the significance of the wettable flank option in the NVMFS5C670NLWF version?
The wettable flank option enhances optical inspection capabilities.
