NVMFS5C423NLWFAFT1G
  • Share:

onsemi NVMFS5C423NLWFAFT1G

Manufacturer No:
NVMFS5C423NLWFAFT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 31A/150A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVMFS5C423NLWFAFT1G is a high-performance, single N-channel power MOSFET produced by onsemi. This device is designed for compact and efficient power management in various applications. It features a small footprint of 5x6 mm, making it ideal for space-constrained designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards. Additionally, it is Pb-free and RoHS compliant, aligning with environmental regulations.

Key Specifications

Parameter Value Unit
Drain-to-Source Voltage (VDSS) 40 V
Gate-to-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TC = 25°C 150 A
Continuous Drain Current (ID) at TC = 100°C 110 A
Pulsed Drain Current (IDM) at TA = 25°C, tp = 10 μs 900 A
Operating Junction and Storage Temperature (TJ, Tstg) −55 to +175 °C
Drain-to-Source On Resistance (RDS(on)) at VGS = 4.5 V, ID = 50 A 2.4 - 3.0
Drain-to-Source On Resistance (RDS(on)) at VGS = 10 V, ID = 50 A 1.6 - 2.0
Junction-to-Case Thermal Resistance (RθJC) 1.8 °C/W
Junction-to-Ambient Thermal Resistance (RθJA) 41 °C/W

Key Features

  • Small Footprint: Compact 5x6 mm DFN5 package for space-efficient designs.
  • Low RDS(on): Minimizes conduction losses with on-resistance as low as 1.6 mΩ at VGS = 10 V.
  • Low QG and Capacitance: Reduces driver losses and improves switching efficiency.
  • Wettable Flank Option: NVMFS5C423NLWFAFT1G features wettable flanks for enhanced optical inspection.
  • AEC-Q101 Qualified and PPAP Capable: Ensures reliability and compliance with automotive standards.
  • Pb-Free and RoHS Compliant: Aligns with environmental regulations.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • Power Management: Ideal for power management in DC-DC converters, motor control, and power supplies.
  • Industrial Control: Used in industrial control systems, robotics, and other high-power applications.
  • Consumer Electronics: Applicable in high-performance consumer electronics requiring efficient power handling.

Q & A

  1. What is the maximum drain-to-source voltage (VDSS) of the NVMFS5C423NLWFAFT1G?

    The maximum drain-to-source voltage (VDSS) is 40 V.

  2. What is the continuous drain current (ID) at TC = 25°C?

    The continuous drain current (ID) at TC = 25°C is 150 A.

  3. What is the typical on-resistance (RDS(on)) at VGS = 10 V and ID = 50 A?

    The typical on-resistance (RDS(on)) at VGS = 10 V and ID = 50 A is 1.6 - 2.0 mΩ.

  4. What is the junction-to-case thermal resistance (RθJC)?

    The junction-to-case thermal resistance (RθJC) is 1.8 °C/W.

  5. Is the NVMFS5C423NLWFAFT1G Pb-free and RoHS compliant?

    Yes, the NVMFS5C423NLWFAFT1G is Pb-free and RoHS compliant.

  6. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is −55 to +175 °C.

  7. What is the pulsed drain current (IDM) at TA = 25°C, tp = 10 μs?

    The pulsed drain current (IDM) at TA = 25°C, tp = 10 μs is 900 A.

  8. What are the key applications of the NVMFS5C423NLWFAFT1G?

    The key applications include automotive systems, power management, industrial control, and consumer electronics.

  9. Does the NVMFS5C423NLWFAFT1G feature wettable flanks?

    Yes, the NVMFS5C423NLWFAFT1G features wettable flanks for enhanced optical inspection.

  10. Is the NVMFS5C423NLWFAFT1G AEC-Q101 qualified and PPAP capable?

    Yes, the NVMFS5C423NLWFAFT1G is AEC-Q101 qualified and PPAP capable.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:31A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3100 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):3.7W (Ta), 83W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
0 Remaining View Similar

In Stock

$1.02
369

Please send RFQ , we will respond immediately.

Same Series
NVMFS5C423NLAFT3G
NVMFS5C423NLAFT3G
MOSFET N-CH 40V 31A/150A 5DFN
NVMFS5C423NLWFAFT3G
NVMFS5C423NLWFAFT3G
MOSFET N-CH 40V 31A/150A 5DFN
NVMFS5C423NLAFT1G
NVMFS5C423NLAFT1G
MOSFET N-CH 40V 31A/150A 5DFN
NVMFS5C423NLT1G
NVMFS5C423NLT1G
MOSFET N-CH 40V 126A 5DFN
NVMFS5C423NLT3G
NVMFS5C423NLT3G
MOSFET N-CH 40V 31A/150A 5DFN
NVMFS5C423NLWFT1G
NVMFS5C423NLWFT1G
MOSFET N-CH 40V 31A/150A 5DFN
NVMFS5C423NLWFT3G
NVMFS5C423NLWFT3G
MOSFET N-CH 40V 31A/150A 5DFN

Similar Products

Part Number NVMFS5C423NLWFAFT1G NVMFS5C423NLWFAFT3G
Manufacturer onsemi onsemi
Product Status Active Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 31A (Ta), 150A (Tc) 31A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 50A, 10V 2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V 50 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3100 pF @ 20 V 3100 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 3.7W (Ta), 83W (Tc) 3.7W (Ta), 83W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
FQD4P40TM
FQD4P40TM
onsemi
MOSFET P-CH 400V 2.7A DPAK
NVF2955T1G
NVF2955T1G
onsemi
MOSFET P-CH 60V 2.6A SOT223
BUK7240-100A,118
BUK7240-100A,118
Nexperia USA Inc.
MOSFET N-CH 100V 34A DPAK
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
STF12N120K5
STF12N120K5
STMicroelectronics
MOSFET N-CH 1200V 12A TO220FP
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK

Related Product By Brand

1SMA5942BT3G
1SMA5942BT3G
onsemi
DIODE ZENER 51V 1.5W SMA
MM3Z13VT1G
MM3Z13VT1G
onsemi
DIODE ZENER 13V 300MW SOD323
MMSZ5221BT1G
MMSZ5221BT1G
onsemi
DIODE ZENER 2.4V 500MW SOD123
1SMB5927BT3
1SMB5927BT3
onsemi
DIODE ZENER 12V 3W SMB
BC856BDW1T1G
BC856BDW1T1G
onsemi
TRANS 2PNP 65V 0.1A SC88/SC70-6
BSS138LT7G
BSS138LT7G
onsemi
MOSFET N-CH 50V 200MA SOT23-3
FGH40N60SFDTU
FGH40N60SFDTU
onsemi
IGBT FIELD STOP 600V 80A TO247-3
CD4081BCN
CD4081BCN
onsemi
IC GATE AND 4CH 2-INP 14DIP
MC74AC139DR2G
MC74AC139DR2G
onsemi
IC DECODER/DEMUX 1X2:4 16SOIC
CAT4008W-T2
CAT4008W-T2
onsemi
IC LED DRIVER LINEAR 80MA 16SOIC
MAX809SQ232T1G
MAX809SQ232T1G
onsemi
IC SUPERVISOR 1 CHANNEL SC70-3
NCP3232NMNTXG
NCP3232NMNTXG
onsemi
IC REG BUCK ADJUSTABLE 15A 40QFN