NVMFS5C423NLWFAFT1G
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onsemi NVMFS5C423NLWFAFT1G

Manufacturer No:
NVMFS5C423NLWFAFT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 31A/150A 5DFN
Delivery:
Payment:
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Product Introduction

Overview

The NVMFS5C423NLWFAFT1G is a high-performance, single N-channel power MOSFET produced by onsemi. This device is designed for compact and efficient power management in various applications. It features a small footprint of 5x6 mm, making it ideal for space-constrained designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards. Additionally, it is Pb-free and RoHS compliant, aligning with environmental regulations.

Key Specifications

Parameter Value Unit
Drain-to-Source Voltage (VDSS) 40 V
Gate-to-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TC = 25°C 150 A
Continuous Drain Current (ID) at TC = 100°C 110 A
Pulsed Drain Current (IDM) at TA = 25°C, tp = 10 μs 900 A
Operating Junction and Storage Temperature (TJ, Tstg) −55 to +175 °C
Drain-to-Source On Resistance (RDS(on)) at VGS = 4.5 V, ID = 50 A 2.4 - 3.0
Drain-to-Source On Resistance (RDS(on)) at VGS = 10 V, ID = 50 A 1.6 - 2.0
Junction-to-Case Thermal Resistance (RθJC) 1.8 °C/W
Junction-to-Ambient Thermal Resistance (RθJA) 41 °C/W

Key Features

  • Small Footprint: Compact 5x6 mm DFN5 package for space-efficient designs.
  • Low RDS(on): Minimizes conduction losses with on-resistance as low as 1.6 mΩ at VGS = 10 V.
  • Low QG and Capacitance: Reduces driver losses and improves switching efficiency.
  • Wettable Flank Option: NVMFS5C423NLWFAFT1G features wettable flanks for enhanced optical inspection.
  • AEC-Q101 Qualified and PPAP Capable: Ensures reliability and compliance with automotive standards.
  • Pb-Free and RoHS Compliant: Aligns with environmental regulations.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • Power Management: Ideal for power management in DC-DC converters, motor control, and power supplies.
  • Industrial Control: Used in industrial control systems, robotics, and other high-power applications.
  • Consumer Electronics: Applicable in high-performance consumer electronics requiring efficient power handling.

Q & A

  1. What is the maximum drain-to-source voltage (VDSS) of the NVMFS5C423NLWFAFT1G?

    The maximum drain-to-source voltage (VDSS) is 40 V.

  2. What is the continuous drain current (ID) at TC = 25°C?

    The continuous drain current (ID) at TC = 25°C is 150 A.

  3. What is the typical on-resistance (RDS(on)) at VGS = 10 V and ID = 50 A?

    The typical on-resistance (RDS(on)) at VGS = 10 V and ID = 50 A is 1.6 - 2.0 mΩ.

  4. What is the junction-to-case thermal resistance (RθJC)?

    The junction-to-case thermal resistance (RθJC) is 1.8 °C/W.

  5. Is the NVMFS5C423NLWFAFT1G Pb-free and RoHS compliant?

    Yes, the NVMFS5C423NLWFAFT1G is Pb-free and RoHS compliant.

  6. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is −55 to +175 °C.

  7. What is the pulsed drain current (IDM) at TA = 25°C, tp = 10 μs?

    The pulsed drain current (IDM) at TA = 25°C, tp = 10 μs is 900 A.

  8. What are the key applications of the NVMFS5C423NLWFAFT1G?

    The key applications include automotive systems, power management, industrial control, and consumer electronics.

  9. Does the NVMFS5C423NLWFAFT1G feature wettable flanks?

    Yes, the NVMFS5C423NLWFAFT1G features wettable flanks for enhanced optical inspection.

  10. Is the NVMFS5C423NLWFAFT1G AEC-Q101 qualified and PPAP capable?

    Yes, the NVMFS5C423NLWFAFT1G is AEC-Q101 qualified and PPAP capable.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:31A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3100 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):3.7W (Ta), 83W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Similar Products

Part Number NVMFS5C423NLWFAFT1G NVMFS5C423NLWFAFT3G
Manufacturer onsemi onsemi
Product Status Active Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 31A (Ta), 150A (Tc) 31A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 50A, 10V 2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V 50 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3100 pF @ 20 V 3100 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 3.7W (Ta), 83W (Tc) 3.7W (Ta), 83W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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