Overview
The NVMFS5832NLT1G is a high-performance Power MOSFET produced by onsemi. This device is part of the NVMFS5832 series and is known for its robust electrical characteristics and reliability. The NVMFS5832NLT1G is designed to operate in a variety of power management and switching applications, offering low on-resistance and high current handling capabilities.
Key Specifications
| Parameter | Value |
|---|---|
| VDS (Drain-Source Voltage) | 40 V |
| ID (Continuous Drain Current) | 120 A |
| RDS(on) (On-Resistance) | 4.2 mΩ (typical at VGS = 10 V) |
| VGS(th) (Threshold Voltage) | 2.4 V (maximum at ID = 250 µA) |
| Qg (Gate Charge) | 51 nC (maximum at VGS = 10 V) |
| Package | DFN5 (Pb-Free) |
Key Features
- Low on-resistance (RDS(on)) of 4.2 mΩ, enhancing efficiency in power management applications.
- High continuous drain current (ID) of 120 A, suitable for high-power switching applications.
- Compact DFN5 package, which is Pb-Free, making it environmentally friendly and space-efficient.
- Low gate charge (Qg) of 51 nC, reducing switching losses and improving overall system performance.
- Robust threshold voltage (VGS(th)) of 2.4 V, ensuring reliable operation across various conditions.
Applications
- Power management in automotive systems, such as battery management and power distribution.
- High-power switching applications in industrial and commercial sectors, including motor control and power supplies.
- Renewable energy systems, such as solar and wind power inverters.
- Consumer electronics requiring high-efficiency power management, such as laptops and smartphones.
Q & A
- What is the maximum drain-source voltage of the NVMFS5832NLT1G?
The maximum drain-source voltage (VDS) is 40 V.
- What is the typical on-resistance of the NVMFS5832NLT1G?
The typical on-resistance (RDS(on)) is 4.2 mΩ at VGS = 10 V.
- What is the continuous drain current rating of the NVMFS5832NLT1G?
The continuous drain current (ID) is 120 A.
- What is the threshold voltage of the NVMFS5832NLT1G?
The threshold voltage (VGS(th)) is 2.4 V maximum at ID = 250 µA.
- What is the gate charge of the NVMFS5832NLT1G?
The gate charge (Qg) is 51 nC maximum at VGS = 10 V.
- In what package is the NVMFS5832NLT1G available?
The NVMFS5832NLT1G is available in a DFN5 (Pb-Free) package.
- Is the NVMFS5832NLT1G still in production?
No, the NVMFS5832NLT1G has been discontinued by onsemi as per their product discontinuance notice.
- What are some common applications for the NVMFS5832NLT1G?
Common applications include power management in automotive systems, high-power switching in industrial and commercial sectors, renewable energy systems, and consumer electronics.
- Where can I find replacement parts for the NVMFS5832NLT1G?
onsemi has suggested replacement parts or alternatives, and they have also partnered with Rochester Electronics and Flip Electronics to carry any remaining inventory.
- What are the environmental benefits of the NVMFS5832NLT1G package?
The DFN5 package is Pb-Free, making it environmentally friendly.
