Overview
The NVMFS2D3P04M8LT1G is a power MOSFET produced by onsemi, designed for high-performance applications. This single P-channel MOSFET is characterized by its low on-resistance (RDS(on)) and high current capability, making it suitable for a variety of power management and switching applications. The device is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive and other stringent requirements.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -40 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | -222 | A |
| Continuous Drain Current (TC = 100°C) | ID | -157 | A |
| Power Dissipation (TC = 25°C) | PD | 205 | W |
| Power Dissipation (TC = 100°C) | PD | 103 | W |
| Pulsed Drain Current (tp = 10 µs) | IDM | -900 | A |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to +175 | °C |
| Source Current (Body Diode) | IS | -171 | A |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 1516 | mJ |
| Lead Temperature for Soldering Purposes | TL | 260 | °C |
| Junction-to-Case Thermal Resistance | RθJC | 0.7 | °C/W |
| Junction-to-Ambient Thermal Resistance | RθJA | 39 | °C/W |
| On-Resistance (VGS = -10 V, ID = -30 A) | RDS(on) | 1.6 - 2.2 | mΩ |
Key Features
- Low RDS(on): Minimizes conduction losses, enhancing overall efficiency.
- High Current Capability: Supports high current applications with a continuous drain current of up to -222 A at TC = 25°C.
- Avalanche Energy Specified: Ensures robust performance under transient conditions with a specified avalanche energy of 1516 mJ.
- AEC-Q101 Qualified and PPAP Capable: Meets automotive and other stringent requirements for reliability and quality.
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Environmentally friendly and compliant with global regulations.
- Wettable Flanks: Available in versions with wettable flanks for improved solderability and inspection.
Applications
The NVMFS2D3P04M8LT1G is suitable for a wide range of applications, including:
- Automotive Systems: Given its AEC-Q101 qualification, it is ideal for use in automotive power management and switching circuits.
- Power Management: Used in DC-DC converters, power supplies, and other power management circuits where high efficiency and reliability are crucial.
- Industrial Control: Applicable in industrial control systems, motor drives, and other high-current applications.
- Consumer Electronics: Suitable for use in high-power consumer electronics such as power adapters, battery chargers, and more.
Q & A
- What is the maximum drain-to-source voltage of the NVMFS2D3P04M8LT1G? The maximum drain-to-source voltage is -40 V.
- What is the continuous drain current at TC = 25°C? The continuous drain current at TC = 25°C is -222 A.
- Is the NVMFS2D3P04M8LT1G AEC-Q101 qualified? Yes, it is AEC-Q101 qualified and PPAP capable.
- What is the on-resistance (RDS(on)) of the device? The on-resistance (RDS(on)) is between 1.6 mΩ and 2.2 mΩ at VGS = -10 V and ID = -30 A.
- What is the junction-to-case thermal resistance? The junction-to-case thermal resistance is 0.7 °C/W.
- Is the device Pb-Free and RoHS compliant? Yes, the device is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
- What is the maximum operating junction temperature? The maximum operating junction temperature is +175 °C.
- What is the single pulse drain-to-source avalanche energy? The single pulse drain-to-source avalanche energy is 1516 mJ.
- Can the NVMFS2D3P04M8LT1G be used in life support systems or medical devices? No, the device is not designed or intended for use in life support systems or medical devices.
- What is the lead temperature for soldering purposes? The lead temperature for soldering purposes is 260 °C.
