Overview
The NVHL040N65S3F is a high-voltage, N-Channel MOSFET from ON Semiconductor's SUPERFET III family. This device utilizes advanced super-junction (SJ) technology to achieve outstanding low on-resistance and reduced gate charge performance. It is designed for high-power applications requiring efficient and reliable operation.
Key Specifications
| Parameter | Value |
|---|---|
| Type of Transistor | MOSFET |
| Type of Control Channel | N-Channel |
| Maximum Drain-Source Voltage (Vds) | 650 V |
| Maximum Gate-Source Voltage (Vgs) | 30 V |
| Maximum Gate-Threshold Voltage (Vgs(th)) | 5 V |
| Maximum Drain Current (Id) | 65 A |
| Maximum Junction Temperature (Tj) | 150 °C |
| Maximum Power Dissipation (Pd) | 446 W |
| Total Gate Charge (Qg) | 153 nC |
| Rise Time (tr) | 53 nS |
| Output Capacitance (Coss) | 140 pF |
| Maximum Drain-Source On-State Resistance (Rds(on)) | 0.04 Ohm |
| Package | TO-247 |
| RoHS Compliance | Yes |
| AEC-Q101 Qualified | Yes |
Key Features
- Utilizes advanced super-junction (SJ) technology for low on-resistance and reduced gate charge.
- High voltage rating of 650 V and high current rating of 65 A.
- Maximum power dissipation of 446 W.
- Low output capacitance (Coss) of 140 pF.
- Fast rise time of 53 nS.
- AEC-Q101 qualified, ensuring reliability for automotive applications.
- RoHS compliant.
Applications
- Automotive systems, including electric vehicles and hybrid vehicles.
- High-power industrial applications such as motor drives and power supplies.
- Renewable energy systems, including solar and wind power inverters.
- Power factor correction (PFC) circuits.
- Switch-mode power supplies.
Q & A
- What is the maximum drain-source voltage of the NVHL040N65S3F MOSFET?
The maximum drain-source voltage (Vds) is 650 V.
- What is the maximum drain current of the NVHL040N65S3F MOSFET?
The maximum drain current (Id) is 65 A.
- What is the package type of the NVHL040N65S3F MOSFET?
The package type is TO-247.
- Is the NVHL040N65S3F MOSFET AEC-Q101 qualified?
Yes, it is AEC-Q101 qualified.
- What is the maximum junction temperature of the NVHL040N65S3F MOSFET?
The maximum junction temperature (Tj) is 150 °C.
- What is the total gate charge of the NVHL040N65S3F MOSFET?
The total gate charge (Qg) is 153 nC.
- Is the NVHL040N65S3F MOSFET RoHS compliant?
Yes, it is RoHS compliant.
- What are some typical applications of the NVHL040N65S3F MOSFET?
Typical applications include automotive systems, high-power industrial applications, renewable energy systems, power factor correction circuits, and switch-mode power supplies.
- What is the rise time of the NVHL040N65S3F MOSFET?
The rise time (tr) is 53 nS.
- What is the maximum power dissipation of the NVHL040N65S3F MOSFET?
The maximum power dissipation (Pd) is 446 W.
