NVD6824NLT4G-VF01
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onsemi NVD6824NLT4G-VF01

Manufacturer No:
NVD6824NLT4G-VF01
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 8.5A/41A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVD6824NLT4G-VF01 is a high-performance, single N-Channel power MOSFET produced by onsemi. This device is designed for automotive and other high-current applications, offering a combination of low on-resistance, high current capability, and robust thermal performance. It is packaged in a DPAK-3 surface mount configuration, ensuring ease of integration into various systems. The MOSFET is AEC-Q101 qualified, making it suitable for demanding automotive environments, and it is also RoHS compliant, halogen-free, and Pb-free, aligning with modern environmental standards.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Breakdown Voltage VDSS 100 V
Gate-to-Source Voltage VGS −20 to +20 V
Continuous Drain Current (TC = 25°C) ID 41 A
Continuous Drain Current (TC = 100°C) ID 29 A
Power Dissipation (TC = 25°C) PD 90 W
Power Dissipation (TC = 100°C) PD 45 W
Drain-to-Source On Resistance RDS(on) 20 mΩ
Gate-to-Source Threshold Voltage VGS(TH) 1.5 to 2.5 V
Gate Charge Qg 66 nC nC
Minimum Operating Temperature TJ −55 °C
Maximum Operating Temperature TJ +175 °C

Key Features

  • Low RDS(on) to minimize conduction losses
  • High current capability, with a continuous drain current of up to 41 A at TC = 25°C
  • Avalanche energy specified, enhancing reliability under high-stress conditions
  • AEC-Q101 qualified, ensuring suitability for automotive applications
  • Pb-free, halogen-free, and RoHS compliant, meeting environmental standards

Applications

  • Solenoid drivers: Ideal for controlling high-current solenoids in automotive and industrial systems.
  • Boost switches: Suitable for boost converters and other power management circuits requiring high efficiency and reliability.
  • Automotive systems: Used in various automotive applications such as motor control, power management, and other high-current switching needs.

Q & A

  1. Q: What is the maximum drain-to-source voltage of the NVD6824NLT4G-VF01?

    A: The maximum drain-to-source voltage (VDSS) is 100 V.

  2. Q: What is the continuous drain current rating at 25°C?

    A: The continuous drain current (ID) at 25°C is 41 A.

  3. Q: Is the NVD6824NLT4G-VF01 AEC-Q101 qualified?

    A: Yes, the NVD6824NLT4G-VF01 is AEC-Q101 qualified, making it suitable for automotive applications.

  4. Q: What is the on-resistance (RDS(on)) of the MOSFET?

    A: The on-resistance (RDS(on)) is 20 mΩ.

  5. Q: What is the gate-to-source threshold voltage range?

    A: The gate-to-source threshold voltage (VGS(TH)) range is from 1.5 V to 2.5 V.

  6. Q: Is the NVD6824NLT4G-VF01 RoHS compliant?

    A: Yes, the NVD6824NLT4G-VF01 is RoHS compliant, Pb-free, and halogen-free.

  7. Q: What is the maximum operating temperature of the MOSFET?

    A: The maximum operating temperature (TJ) is +175°C.

  8. Q: What is the typical gate charge (Qg) of the MOSFET?

    A: The typical gate charge (Qg) is 66 nC.

  9. Q: What are some common applications of the NVD6824NLT4G-VF01?

    A: Common applications include solenoid drivers, boost switches, and various automotive systems.

  10. Q: What is the warranty period for the NVD6824NLT4G-VF01?

    A: The warranty period is 1 year, covering any defects in materials and workmanship under normal use.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:8.5A (Ta), 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:20mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:66 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3468 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.9W (Ta), 90W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number NVD6824NLT4G-VF01 NVD6820NLT4G-VF01
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 90 V
Current - Continuous Drain (Id) @ 25°C 8.5A (Ta), 41A (Tc) 10A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 20A, 10V 16.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 66 nC @ 10 V 83 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3468 pF @ 25 V 4209 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.9W (Ta), 90W (Tc) 4W (Ta), 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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