Overview
The NVD6416ANLT4G-001 is a high-performance, N-Channel power MOSFET produced by onsemi. This device is part of the NVD6416ANL series, which is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring stringent quality and reliability standards. The MOSFET is known for its low on-resistance (RDS(on)), high current capability, and robust avalanche characteristics.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 100 | V |
| Gate-to-Source Voltage - Continuous | VGS | ±20 | V |
| Continuous Drain Current (Steady State) at TC = 25°C | ID | 19 | A |
| Power Dissipation (Steady State) at TC = 25°C | PD | 71 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | 70 | A |
| Operating and Storage Temperature Range | TJ, Tstg | -55 to +175 | °C |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 50 | mJ |
| Lead Temperature for Soldering Purposes | TL | 260 | °C |
| Drain-to-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 19 A | RDS(on) | 68-74 | mΩ |
| Junction-to-Case Thermal Resistance (RθJC) | RθJC | 2.1 | °C/W |
| Junction-to-Ambient Thermal Resistance (RθJA) | RθJA | 47 | °C/W |
Key Features
- Low RDS(on): The NVD6416ANLT4G-001 features a low on-resistance, which minimizes power losses and enhances efficiency in high-current applications.
- High Current Capability: With a continuous drain current of 19 A and a pulsed drain current of 70 A, this MOSFET is suitable for high-power applications.
- 100% Avalanche Tested: The device is rigorously tested for avalanche performance, ensuring reliability under harsh conditions.
- AEC-Q101 Qualified and PPAP Capable: This MOSFET meets the stringent automotive quality standards, making it ideal for automotive and other critical applications.
- Pb-Free and RoHS Compliant: The device is lead-free and compliant with RoHS regulations, ensuring environmental sustainability.
Applications
- Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
- Power Supplies: Used in high-power supply systems where low on-resistance and high current handling are critical.
- Motor Control: Ideal for motor control applications requiring high current and low power losses.
- Industrial Power Management: Applicable in industrial power management systems that demand robust and reliable performance.
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NVD6416ANLT4G-001?
The maximum drain-to-source voltage (VDSS) is 100 V.
- What is the continuous drain current (ID) at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is 19 A.
- What is the on-resistance (RDS(on)) at VGS = 10 V and ID = 19 A?
The on-resistance (RDS(on)) at VGS = 10 V and ID = 19 A is between 68-74 mΩ.
- Is the NVD6416ANLT4G-001 AEC-Q101 qualified?
Yes, the NVD6416ANLT4G-001 is AEC-Q101 qualified and PPAP capable.
- What is the operating temperature range of the NVD6416ANLT4G-001?
The operating and storage temperature range is -55 to +175°C.
- What is the single pulse drain-to-source avalanche energy (EAS) of the device?
The single pulse drain-to-source avalanche energy (EAS) is 50 mJ.
- Is the NVD6416ANLT4G-001 Pb-Free and RoHS compliant?
Yes, the device is Pb-Free and RoHS compliant.
- What is the junction-to-case thermal resistance (RθJC) of the device?
The junction-to-case thermal resistance (RθJC) is 2.1°C/W.
- What are the typical applications of the NVD6416ANLT4G-001?
Typical applications include automotive systems, power supplies, motor control, and industrial power management.
- What is the lead temperature for soldering purposes?
The lead temperature for soldering purposes is 260°C.
