Overview
The NVD5890NLT4G-VF01 is a high-performance N-Channel MOSFET produced by onsemi, designed for demanding applications, particularly in the automotive sector. This device is part of the AEC-Q101 qualified series, ensuring it meets stringent automotive standards. It offers a compact and efficient power management solution, making it suitable for a variety of power switching and control applications.
Key Specifications
| Parameter | Value |
|---|---|
| Current | 24A (Ta), 123A (Tc) |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4760 pF @ 25 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Power Dissipation (Max) | 4W (Ta), 107W (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 50A, 10V |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Key Features
- High Current Capability: The NVD5890NLT4G-VF01 can handle continuous drain currents of 24A at ambient temperature and up to 123A at case temperature.
- Low On-Resistance: With a maximum on-resistance of 3.7mOhm at 50A and 10V, this MOSFET minimizes power losses.
- Wide Operating Temperature Range: It operates reliably from -55°C to 175°C, making it suitable for harsh environments.
- Compact Packaging: Available in TO-252-3, DPak (2 Leads + Tab), and SC-63 packages, it is ideal for space-constrained designs.
- AEC-Q101 Qualified: Ensures compliance with automotive standards for reliability and performance.
Applications
The NVD5890NLT4G-VF01 is primarily used in automotive applications, including power management, motor control, and other high-power switching circuits. Its robust design and high reliability also make it suitable for industrial and commercial power systems, battery management systems, and other demanding power electronics applications.
Q & A
- Q: What is the maximum drain to source voltage (Vdss) of the NVD5890NLT4G-VF01?
A: The maximum drain to source voltage (Vdss) is 40 V. - Q: What is the continuous drain current (Id) at 25°C for this MOSFET?
A: The continuous drain current (Id) at 25°C is 24A. - Q: What is the maximum on-resistance (Rds On) of the NVD5890NLT4G-VF01?
A: The maximum on-resistance (Rds On) is 3.7mOhm at 50A and 10V. - Q: What is the operating temperature range of this MOSFET?
A: The operating temperature range is -55°C to 175°C (TJ). - Q: Is the NVD5890NLT4G-VF01 AEC-Q101 qualified?
A: Yes, it is AEC-Q101 qualified, making it suitable for automotive applications. - Q: What are the available package types for this MOSFET?
A: It is available in TO-252-3, DPak (2 Leads + Tab), and SC-63 packages. - Q: How can I ensure the authenticity of the NVD5890NLT4G-VF01 from onsemi?
A: Ensure you purchase from authorized distributors or directly from onsemi to guarantee authenticity. - Q: What is the warranty period for the NVD5890NLT4G-VF01?
A: Typically, it comes with a 1-year warranty, but this may vary depending on the supplier. - Q: Where can I find detailed information about the NVD5890NLT4G-VF01, such as datasheets and application notes?
A: You can find detailed information on the onsemi website, or through authorized distributors like Ovaga. - Q: How can I contact support for technical inquiries about the NVD5890NLT4G-VF01?
A: You can contact onsemi support or authorized distributors like Ovaga via email or their customer service channels.
