NTTFS5820NLTAG
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onsemi NTTFS5820NLTAG

Manufacturer No:
NTTFS5820NLTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 11A/37A 8WDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTTFS5820NLTAG is a N-channel Power MOSFET manufactured by onsemi. This component is characterized by its high performance and reliability, making it suitable for various power management applications. However, it is important to note that this product is currently scheduled for obsolescence and will be discontinued by the manufacturer.

Key Specifications

ParameterValue
Drain-Source Voltage (Vds)60 V
Continuous Drain Current (Id)11 A
Pulse Drain Current (Id)37 A
On-Resistance (Rds(on))11.5 mΩ
Power Dissipation (Pd)33 W
Package TypeWDFN8

Key Features

  • High drain-source voltage of 60 V, making it suitable for high-voltage applications.
  • Continuous drain current of 11 A and pulse drain current of 37 A, ensuring robust current handling.
  • Low on-resistance of 11.5 mΩ, which minimizes power losses.
  • Compact WDFN8 package, offering a balance between performance and space efficiency.

Applications

The NTTFS5820NLTAG is designed for use in various power management and control applications, including but not limited to:

  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Power amplifiers and audio systems.
  • Automotive and industrial power management systems.

Q & A

  1. What is the drain-source voltage of the NTTFS5820NLTAG?
    The drain-source voltage of the NTTFS5820NLTAG is 60 V.
  2. What is the continuous drain current of this MOSFET?
    The continuous drain current is 11 A.
  3. What is the pulse drain current of this MOSFET?
    The pulse drain current is 37 A.
  4. What is the on-resistance of the NTTFS5820NLTAG?
    The on-resistance is 11.5 mΩ.
  5. In what package is the NTTFS5820NLTAG available?
    The NTTFS5820NLTAG is available in a WDFN8 package.
  6. Is the NTTFS5820NLTAG still in production?
    No, the NTTFS5820NLTAG is scheduled for obsolescence and will be discontinued by the manufacturer.
  7. What are some typical applications for the NTTFS5820NLTAG?
    Typical applications include DC-DC converters, motor control systems, power amplifiers, and automotive/industrial power management.
  8. What is the power dissipation of the NTTFS5820NLTAG?
    The power dissipation is 33 W.
  9. Where can I find detailed specifications for the NTTFS5820NLTAG?
    Detailed specifications can be found on the datasheet available from sources like Digi-Key, Mouser, and the onsemi website.
  10. What should I do if I need a substitute for the NTTFS5820NLTAG?
    You should consult the manufacturer or authorized distributors for recommended substitutes or alternative package types.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta), 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:11.5mOhm @ 8.7A, 10V
Vgs(th) (Max) @ Id:2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:28 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1462 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.7W (Ta), 33W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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Same Series
NTTFS5820NLTWG
NTTFS5820NLTWG
MOSFET N-CH 60V 11A/37A 8WDFN

Similar Products

Part Number NTTFS5820NLTAG NTTFS5826NLTAG NTTFS5820NLTWG
Manufacturer onsemi onsemi onsemi
Product Status Last Time Buy Last Time Buy Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 37A (Tc) 8A (Ta) 11A (Ta), 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 11.5mOhm @ 8.7A, 10V 24mOhm @ 7.5A, 10V 11.5mOhm @ 8.7A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA 3V @ 250µA 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V 25 nC @ 10 V 28 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1462 pF @ 25 V 850 pF @ 25 V 1462 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 2.7W (Ta), 33W (Tc) 3.1W (Ta), 19W (Tc) 2.7W (Ta), 33W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN

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