Overview
The NVTFS5826NL is a power MOSFET from onsemi, designed for high-performance applications. This single N-channel MOSFET features a small footprint of 3.3 x 3.3 mm, making it ideal for compact designs. It is AEC-Q101 qualified and PPAP capable, ensuring reliability in automotive and industrial environments. The device is Pb-free and RoHS compliant, aligning with environmental standards.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (Tmb = 25°C) | ID | 20 | A |
| Continuous Drain Current (Tmb = 100°C) | ID | 14 | A |
| Power Dissipation (Tmb = 25°C) | PD | 22 | W |
| Power Dissipation (Tmb = 100°C) | PD | 11 | W |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 10 A) | RDS(on) | 19 - 24 | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.5 - 2.5 | V |
| Operating Junction and Storage Temperature | TJ, Tstg | -55 to +175 | °C |
Key Features
- Small Footprint: Compact 3.3 x 3.3 mm design for space-efficient applications.
- Low RDS(on): Minimizes conduction losses with a drain-to-source on resistance of 19 - 24 mΩ at VGS = 10 V.
- Low Capacitance: Reduces driver losses with input capacitance (Ciss) of 850 pF.
- AEC-Q101 Qualified and PPAP Capable: Ensures reliability in automotive and industrial environments.
- Pb-Free and RoHS Compliant: Aligns with environmental standards.
- Wettable Flanks: Available in versions with wettable flanks for improved solder joint inspection.
Applications
The NVTFS5826NL is suitable for a variety of high-performance applications, including:
- Automotive systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive power management and control systems.
- Industrial power supplies: Its high current and low RDS(on) make it suitable for industrial power supply applications.
- Motor control: Used in motor control circuits where high efficiency and reliability are critical.
- Power management: Suitable for power management in various electronic devices requiring high current handling.
Q & A
- What is the maximum drain-to-source voltage of the NVTFS5826NL?
The maximum drain-to-source voltage (VDSS) is 60 V.
- What is the continuous drain current at Tmb = 25°C?
The continuous drain current (ID) at Tmb = 25°C is 20 A.
- What is the typical drain-to-source on resistance at VGS = 10 V?
The typical drain-to-source on resistance (RDS(on)) at VGS = 10 V is 19 - 24 mΩ.
- Is the NVTFS5826NL AEC-Q101 qualified?
Yes, the NVTFS5826NL is AEC-Q101 qualified and PPAP capable.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is -55 to +175 °C.
- Is the device Pb-free and RoHS compliant?
Yes, the device is Pb-free and RoHS compliant.
- What is the input capacitance (Ciss) of the device?
The input capacitance (Ciss) is 850 pF.
- What are the typical switching times for the device?
The turn-on delay time (td(on)) is 9 ns, rise time (tr) is 29 ns, turn-off delay time (td(off)) is 14 ns, and fall time (tf) is 21 ns.
- What is the maximum avalanche energy of the device?
The maximum avalanche energy (EAS) is 20 mJ.
- What is the lead temperature for soldering purposes?
The lead temperature for soldering purposes is 260 °C.
