NTR5198NLT1G
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onsemi NTR5198NLT1G

Manufacturer No:
NTR5198NLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 1.7A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTR5198NLT1G is a power, single, N-channel, logic level MOSFET produced by onsemi. This device is packaged in the industry-standard SOT-23 package, making it suitable for applications where space is limited. It is designed to offer low RDS(on) for minimal conduction losses and improved efficiency. The NTR5198NLT1G is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 60 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TA = 25°C) ID 2.2 A
Continuous Drain Current (TA = 100°C) ID 1.6 A
Power Dissipation (TA = 25°C) PD 1.5 W
Power Dissipation (TA = 100°C) PD 0.6 W
Pulsed Drain Current (TA = 25°C, tp = 10 μs) IDM 27 A
Operating Junction and Storage Temperature TJ, Tstg −55 to 150 °C
Source Current (Body Diode) IS 1.9 A
Lead Temperature for Soldering Purposes TL 260 °C
Drain-to-Source On-Resistance (VGS = 10 V, ID = 1 A) RDS(on) 107 - 155
Gate Threshold Voltage VGS(TH) 1.5 - 2.5 V

Key Features

  • Small footprint industry-standard SOT-23 package
  • Low RDS(on) for low conduction losses and improved efficiency
  • Pb-free, halogen-free, and RoHS compliant
  • High drain-to-source breakdown voltage (VDSS) of 60 V
  • High continuous drain current (up to 2.2 A at TA = 25°C)
  • Wide operating junction and storage temperature range (−55 to 150°C)
  • Low gate threshold voltage (VGS(TH)) of 1.5 - 2.5 V

Applications

The NTR5198NLT1G MOSFET is suitable for a variety of applications, including:

  • Power management in portable electronics
  • DC-DC converters and power supplies
  • Motor control and drive circuits
  • Switching and linear amplifiers
  • General-purpose switching applications where low RDS(on) and high efficiency are required

Q & A

  1. What is the maximum drain-to-source voltage of the NTR5198NLT1G?

    The maximum drain-to-source voltage (VDSS) is 60 V.

  2. What is the typical on-resistance of the NTR5198NLT1G at VGS = 10 V and ID = 1 A?

    The typical on-resistance (RDS(on)) is 107 - 155 mΩ.

  3. What is the continuous drain current rating at TA = 25°C?

    The continuous drain current (ID) is up to 2.2 A at TA = 25°C.

  4. Is the NTR5198NLT1G RoHS compliant?
  5. What is the operating junction and storage temperature range of the NTR5198NLT1G?

    The operating junction and storage temperature range is −55 to 150°C.

  6. What is the gate threshold voltage range of the NTR5198NLT1G?

    The gate threshold voltage (VGS(TH)) range is 1.5 - 2.5 V.

  7. What is the maximum power dissipation at TA = 25°C?

    The maximum power dissipation (PD) is 1.5 W at TA = 25°C.

  8. What is the lead temperature for soldering purposes?

    The lead temperature for soldering purposes is 260°C.

  9. What are some typical applications of the NTR5198NLT1G?

    Typical applications include power management in portable electronics, DC-DC converters, motor control, and general-purpose switching.

  10. What package type is the NTR5198NLT1G available in?

    The NTR5198NLT1G is available in the SOT-23 package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:155mOhm @ 1A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2.8 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:182 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):900mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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