NTR4170NT1G
  • Share:

onsemi NTR4170NT1G

Manufacturer No:
NTR4170NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTR4170NT1G is a power MOSFET produced by onsemi, designed to offer high performance and reliability in various electronic applications. This device is packaged in a SOT-23 form factor, making it suitable for space-constrained designs. It is lead-free and comes in tape and reel packaging for ease of use in high-volume manufacturing processes.

Key Specifications

ParameterValue
Minimum Operating Temperature-55°C
Maximum Operating Temperature+150°C
Power Dissipation (Pd)1.25 W
Channel ModeEnhancement
Package TypeSOT-23 (Pb-Free)

Key Features

  • High operating temperature range: -55°C to +150°C, making it suitable for harsh environments.
  • Enhancement mode operation for efficient switching.
  • Compact SOT-23 package for space-saving designs.
  • Lead-free and RoHS compliant, ensuring environmental sustainability.
  • High power dissipation capability of 1.25 W.

Applications

The NTR4170NT1G is versatile and can be used in a variety of applications, including but not limited to:

  • Power management systems
  • Switching circuits
  • Automotive systems
  • Industrial control systems
  • Consumer electronics requiring high reliability and efficiency.

Q & A

  1. What is the package type of the NTR4170NT1G? The NTR4170NT1G is packaged in a SOT-23 form factor.
  2. Is the NTR4170NT1G lead-free? Yes, the NTR4170NT1G is lead-free and RoHS compliant.
  3. What is the maximum operating temperature of the NTR4170NT1G? The maximum operating temperature is +150°C.
  4. What is the power dissipation capability of the NTR4170NT1G? The power dissipation capability is 1.25 W.
  5. In what channel mode does the NTR4170NT1G operate? The NTR4170NT1G operates in enhancement mode.
  6. What are some common applications of the NTR4170NT1G? Common applications include power management systems, switching circuits, automotive systems, and industrial control systems.
  7. What is the minimum operating temperature of the NTR4170NT1G? The minimum operating temperature is -55°C.
  8. Is the NTR4170NT1G suitable for high-volume manufacturing? Yes, it is available in tape and reel packaging for high-volume manufacturing.
  9. Where can I find detailed specifications for the NTR4170NT1G? Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.
  10. Is the NTR4170NT1G environmentally friendly? Yes, it is lead-free and RoHS compliant, making it an environmentally friendly option.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:55mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id:1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:4.76 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:432 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):480mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.39
1,893

Please send RFQ , we will respond immediately.

Same Series
NTR4170NT3G
NTR4170NT3G
MOSFET N-CH 30V 3.2A SOT23-3

Similar Products

Part Number NTR4170NT1G NTR4170NT3G
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 2.4A (Ta) 2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V 2.5V, 10V
Rds On (Max) @ Id, Vgs 55mOhm @ 3.2A, 10V 55mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id 1.4V @ 250µA 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.76 nC @ 4.5 V 4.76 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 432 pF @ 15 V 432 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 480mW (Ta) 480mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
FDMS86101A
FDMS86101A
onsemi
MOSFET N-CH 100V 13A/60A 8PQFN
STB30N65M5
STB30N65M5
STMicroelectronics
MOSFET N-CH 650V 22A D2PAK
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
2N7002BKM,315
2N7002BKM,315
Nexperia USA Inc.
MOSFET N-CH 60V 450MA DFN1006-3
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG

Related Product By Brand

SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
MMBD7000LT1G
MMBD7000LT1G
onsemi
DIODE ARRAY GP 100V 200MA SOT23
MM5Z6V2T1G
MM5Z6V2T1G
onsemi
DIODE ZENER 6.2V 500MW SOD523
FDMS86200
FDMS86200
onsemi
MOSFET N-CH 150V 9.6A/35A 8PQFN
NCV2904VDR2G
NCV2904VDR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
NCP1377DR2G
NCP1377DR2G
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
AMIS30521C5212G
AMIS30521C5212G
onsemi
IC MTRDRV BIPLR 4.75-5.25V 32QFP
NCP1623ASNT1G
NCP1623ASNT1G
onsemi
ENHANCED HIGH EFFICIENCY POWER F
UC2844D
UC2844D
onsemi
CURRENT MODE PWM CONTROLLER
MC33269DTRK-3.3
MC33269DTRK-3.3
onsemi
IC REG LDO 0.8A 3.3V DPAK
MC78PC30NTRG
MC78PC30NTRG
onsemi
IC REG LINEAR 3V 150MA 5TSOP