NTR4170NT1G
  • Share:

onsemi NTR4170NT1G

Manufacturer No:
NTR4170NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTR4170NT1G is a power MOSFET produced by onsemi, designed to offer high performance and reliability in various electronic applications. This device is packaged in a SOT-23 form factor, making it suitable for space-constrained designs. It is lead-free and comes in tape and reel packaging for ease of use in high-volume manufacturing processes.

Key Specifications

ParameterValue
Minimum Operating Temperature-55°C
Maximum Operating Temperature+150°C
Power Dissipation (Pd)1.25 W
Channel ModeEnhancement
Package TypeSOT-23 (Pb-Free)

Key Features

  • High operating temperature range: -55°C to +150°C, making it suitable for harsh environments.
  • Enhancement mode operation for efficient switching.
  • Compact SOT-23 package for space-saving designs.
  • Lead-free and RoHS compliant, ensuring environmental sustainability.
  • High power dissipation capability of 1.25 W.

Applications

The NTR4170NT1G is versatile and can be used in a variety of applications, including but not limited to:

  • Power management systems
  • Switching circuits
  • Automotive systems
  • Industrial control systems
  • Consumer electronics requiring high reliability and efficiency.

Q & A

  1. What is the package type of the NTR4170NT1G? The NTR4170NT1G is packaged in a SOT-23 form factor.
  2. Is the NTR4170NT1G lead-free? Yes, the NTR4170NT1G is lead-free and RoHS compliant.
  3. What is the maximum operating temperature of the NTR4170NT1G? The maximum operating temperature is +150°C.
  4. What is the power dissipation capability of the NTR4170NT1G? The power dissipation capability is 1.25 W.
  5. In what channel mode does the NTR4170NT1G operate? The NTR4170NT1G operates in enhancement mode.
  6. What are some common applications of the NTR4170NT1G? Common applications include power management systems, switching circuits, automotive systems, and industrial control systems.
  7. What is the minimum operating temperature of the NTR4170NT1G? The minimum operating temperature is -55°C.
  8. Is the NTR4170NT1G suitable for high-volume manufacturing? Yes, it is available in tape and reel packaging for high-volume manufacturing.
  9. Where can I find detailed specifications for the NTR4170NT1G? Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.
  10. Is the NTR4170NT1G environmentally friendly? Yes, it is lead-free and RoHS compliant, making it an environmentally friendly option.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:55mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id:1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:4.76 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:432 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):480mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.39
1,893

Please send RFQ , we will respond immediately.

Same Series
NTR4170NT3G
NTR4170NT3G
MOSFET N-CH 30V 3.2A SOT23-3

Similar Products

Part Number NTR4170NT1G NTR4170NT3G
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 2.4A (Ta) 2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V 2.5V, 10V
Rds On (Max) @ Id, Vgs 55mOhm @ 3.2A, 10V 55mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id 1.4V @ 250µA 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.76 nC @ 4.5 V 4.76 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 432 pF @ 15 V 432 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 480mW (Ta) 480mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

FDD86102LZ
FDD86102LZ
onsemi
MOSFET N-CH 100V 8A/35A DPAK
AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
NTHL050N65S3HF
NTHL050N65S3HF
onsemi
MOSFET N-CH 650V 58A TO247-3
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
PMZB290UNE,315
PMZB290UNE,315
NXP USA Inc.
MOSFET N-CH 20V 1A DFN1006B-3
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
STW88N65M5-4
STW88N65M5-4
STMicroelectronics
MOSFET N-CH 650V 84A TO247-4L
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247

Related Product By Brand

MMBD7000LT1G
MMBD7000LT1G
onsemi
DIODE ARRAY GP 100V 200MA SOT23
NRVBD1035VCTLT4G
NRVBD1035VCTLT4G
onsemi
DIODE SCHOTTKY DPAK
MMSZ11T1G
MMSZ11T1G
onsemi
DIODE ZENER 11V 500MW SOD123
MMSZ5221BT1G
MMSZ5221BT1G
onsemi
DIODE ZENER 2.4V 500MW SOD123
1SMB5927BT3
1SMB5927BT3
onsemi
DIODE ZENER 12V 3W SMB
TIP145G
TIP145G
onsemi
TRANS PNP DARL 60V 10A TO247-3
2N7002KW
2N7002KW
onsemi
MOSFET N-CH 60V 310MA SC70
NTB6413ANG
NTB6413ANG
onsemi
MOSFET N-CH 100V 42A D2PAK
FDD2572-F085
FDD2572-F085
onsemi
MOSFET N-CH 150V 4A/29A TO252AA
NCV2820MUTBG
NCV2820MUTBG
onsemi
IC AMP CLASS D MONO 8UDFN
NCP302HSN27T1G
NCP302HSN27T1G
onsemi
IC SUPERVISOR 1 CHANNEL 5TSOP
MC33275ST-5.0T3G
MC33275ST-5.0T3G
onsemi
IC REG LINEAR 5V 300MA SOT223