Overview
The NTR3A30PZT1G is a single P-Channel power MOSFET produced by onsemi, packaged in a SOT-23 case. This device is designed for high-performance power management applications, particularly in portable products such as smartphones, media tablets, and GPS devices. It features a low on-resistance (RDS(on)) and is optimized for high side load switching and battery switch applications. The MOSFET is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -20 | V |
| Gate-to-Source Voltage | VGS | ±8 | V |
| Drain Current (Steady State, TA = 25°C) | ID | -3.0 | A |
| Drain Current (Pulsed, t ≤ 5 s, TA = 25°C) | ID | -5.5 | A |
| Power Dissipation (Steady State, TA = 25°C) | PD | 0.48 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | -9.1 | A |
| Operating Junction and Storage Temperature | TJ, TSTG | -55 to 150 | °C |
| ESD HBM, JESD22-A114 | VESD | 2000 | V |
| Source Current (Body Diode) | IS | -0.48 | A |
| Lead Temperature for Soldering Purposes | TL | 260 | °C |
| Gate Threshold Voltage | VGS(TH) | -0.4 to -1.0 | V |
| Drain-to-Source On Resistance (RDS(on)) at VGS = -4.5 V, ID = -3 A | RDS(on) | 31 to 38 mΩ | mΩ |
Key Features
- Low RDS(on) solution in a compact 2.4 mm x 2.9 mm SOT-23 package
- ESD diode-protected gate for enhanced reliability
- Pb-free, halogen-free, and RoHS compliant
- High side load switch and battery switch capabilities
- Optimized for power management in portable products such as smartphones, media tablets, and GPS devices
Applications
- High side load switching
- Battery switching
- Power management in portable products:
- Smartphones
- Media tablets
- PMP (Portable Media Players)
- DSC (Digital Still Cameras)
- GPS devices
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NTR3A30PZT1G?
The maximum drain-to-source voltage (VDSS) is -20 V.
- What is the maximum gate-to-source voltage (VGS) for the NTR3A30PZT1G?
The maximum gate-to-source voltage (VGS) is ±8 V.
- What is the steady-state drain current (ID) at TA = 25°C?
The steady-state drain current (ID) at TA = 25°C is -3.0 A.
- What is the pulsed drain current (IDM) for tp = 10 μs?
The pulsed drain current (IDM) for tp = 10 μs is -9.1 A.
- What are the operating junction and storage temperatures for the NTR3A30PZT1G?
The operating junction and storage temperatures are -55 to 150°C.
- Is the NTR3A30PZT1G ESD protected?
Yes, the NTR3A30PZT1G has ESD diode-protected gates.
- What is the typical on-resistance (RDS(on)) at VGS = -4.5 V and ID = -3 A?
The typical on-resistance (RDS(on)) at VGS = -4.5 V and ID = -3 A is 31 to 38 mΩ.
- What are the common applications of the NTR3A30PZT1G?
Common applications include high side load switching, battery switching, and power management in portable products like smartphones and GPS devices.
- Is the NTR3A30PZT1G RoHS compliant?
Yes, the NTR3A30PZT1G is Pb-free, halogen-free, and RoHS compliant.
- What is the package type of the NTR3A30PZT1G?
The package type is SOT-23.
