NTP055N65S3H
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onsemi NTP055N65S3H

Manufacturer No:
NTP055N65S3H
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 650V 47A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTP055N65S3H is a high-performance N-Channel MOSFET from onsemi, part of their SUPERFET III family. This device is designed to provide fast switching and high efficiency, making it suitable for a variety of power management and switching applications. The MOSFET features advanced technology that enhances its reliability and performance in demanding environments.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)650 V
VGS (Gate-Source Voltage)±30 V
ID (Continuous Drain Current)5.5 A
RDS(on) (On-Resistance)55 mΩ (Typical at VGS = 10 V)
trr (Rise Time)15 ns (Typical)
trf (Fall Time)10 ns (Typical)
PD (Maximum Power Dissipation)150 W
TJ (Junction Temperature)-55°C to 150°C

Key Features

  • High voltage rating of 650 V, making it suitable for high-power applications.
  • Low on-resistance (RDS(on)) of 55 mΩ, which minimizes power losses.
  • Fast switching times with a rise time of 15 ns and fall time of 10 ns.
  • High continuous drain current of 5.5 A.
  • Wide operating junction temperature range from -55°C to 150°C.

Applications

The NTP055N65S3H MOSFET is ideal for various high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems such as Electronic Power Steering (EPS) and On-Board Chargers (OBCs).
  • Industrial power management and control systems.

Q & A

  1. What is the maximum drain-source voltage of the NTP055N65S3H MOSFET?
    The maximum drain-source voltage (VDS) is 650 V.
  2. What is the typical on-resistance of the NTP055N65S3H?
    The typical on-resistance (RDS(on)) is 55 mΩ at VGS = 10 V.
  3. What is the continuous drain current rating of the NTP055N65S3H?
    The continuous drain current (ID) is 5.5 A.
  4. What are the typical rise and fall times of the NTP055N65S3H?
    The typical rise time (trr) is 15 ns, and the typical fall time (trf) is 10 ns.
  5. What is the maximum power dissipation of the NTP055N65S3H?
    The maximum power dissipation (PD) is 150 W.
  6. What is the operating junction temperature range of the NTP055N65S3H?
    The operating junction temperature range is from -55°C to 150°C.
  7. In which applications is the NTP055N65S3H commonly used?
    The NTP055N65S3H is commonly used in power supplies, DC-DC converters, motor control systems, automotive systems, and industrial power management.
  8. What family of MOSFETs does the NTP055N65S3H belong to?
    The NTP055N65S3H belongs to the SUPERFET III family from onsemi.
  9. Where can I find detailed specifications and datasheets for the NTP055N65S3H?
    Detailed specifications and datasheets can be found on the onsemi official website, as well as on distributor websites like Mouser Electronics.
  10. What are the benefits of using the NTP055N65S3H in high-power applications?
    The benefits include high voltage and current ratings, low on-resistance, fast switching times, and a wide operating temperature range, which enhance efficiency and reliability in high-power applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:47A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:55mOhm @ 23.5A, 10V
Vgs(th) (Max) @ Id:4V @ 4.8mA
Gate Charge (Qg) (Max) @ Vgs:96 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4305 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):305W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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