NTMS10P02R2G
  • Share:

onsemi NTMS10P02R2G

Manufacturer No:
NTMS10P02R2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 8.8A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMS10P02R2G is a P-Channel, enhancement mode, power MOSFET produced by onsemi. This device is designed for high-efficiency power management in various applications, particularly in portable and battery-powered products. It features an ultra-low on-resistance (RDS(on)) and a logic level gate drive, making it suitable for applications requiring low power consumption and high performance.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS-20Vdc
Gate-to-Source Voltage - ContinuousVGS-12Vdc
Continuous Drain Current at 25°CID-10A
Continuous Drain Current at 70°CID-8.0A
Maximum Operating Power Dissipation at 25°CPD50W
Thermal Resistance - Junction-to-AmbientRθJA50°C/W
Gate Threshold VoltageVGS(th)-0.6 to -1.2Vdc
Static Drain-to-Source On-State ResistanceRDS(on)0.012 to 0.017Ω
Input CapacitanceCiss3100 to 3640pF
Output CapacitanceCoss1100 to 1670pF
Reverse Transfer CapacitanceCrss475 to 1010pF

Key Features

  • Ultra low RDS(on) for higher efficiency and extended battery life.
  • Logic level gate drive for easy integration with digital circuits.
  • Miniature SOIC-8 surface mount package for compact designs.
  • High speed, soft recovery diode for reduced switching losses.
  • Avalanche energy specified for robust operation.
  • Pb-Free package available.

Applications

The NTMS10P02R2G is ideal for power management in portable and battery-powered products, including cellular and cordless telephones, PCMCIA cards, and other mobile devices that require efficient power handling.

Q & A

  1. What is the maximum drain-to-source voltage of the NTMS10P02R2G? The maximum drain-to-source voltage is -20 Vdc.
  2. What is the continuous drain current at 25°C? The continuous drain current at 25°C is -10 A.
  3. What is the thermal resistance from junction to ambient? The thermal resistance from junction to ambient is 50 °C/W.
  4. What is the gate threshold voltage range? The gate threshold voltage range is -0.6 to -1.2 Vdc.
  5. What is the typical on-state resistance? The typical on-state resistance is 0.012 to 0.017 Ω.
  6. What type of package does the NTMS10P02R2G come in? The NTMS10P02R2G comes in a miniature SOIC-8 surface mount package.
  7. Is the NTMS10P02R2G Pb-Free? Yes, the NTMS10P02R2G is available in a Pb-Free package.
  8. What are some typical applications for the NTMS10P02R2G? Typical applications include power management in portable and battery-powered products such as cellular and cordless telephones and PCMCIA cards.
  9. What is the maximum operating power dissipation at 25°C? The maximum operating power dissipation at 25°C is 50 W.
  10. What is the input capacitance range? The input capacitance range is 3100 to 3640 pF.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:14mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:3640 pF @ 16 V
FET Feature:- 
Power Dissipation (Max):1.6W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

$1.80
49

Please send RFQ , we will respond immediately.

Same Series
NTMS10P02R2
NTMS10P02R2
MOSFET P-CH 20V 8.8A 8SOIC

Similar Products

Part Number NTMS10P02R2G NTMS10P02R2
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 8.8A (Ta) 8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 14mOhm @ 10A, 4.5V 14mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 4.5 V 70 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 3640 pF @ 16 V 3640 pF @ 16 V
FET Feature - -
Power Dissipation (Max) 1.6W (Ta) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

Related Product By Categories

VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
FDP032N08B-F102
FDP032N08B-F102
onsemi
MOSFET N-CH 80V 120A TO220-3
STL38N65M5
STL38N65M5
STMicroelectronics
MOSFET N-CH 650V PWRFLAT HV
STD5NM60T4
STD5NM60T4
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG
MCH3375-TL-W-Z
MCH3375-TL-W-Z
onsemi
MOSFET P-CH 30V 1.6A SC-70FL

Related Product By Brand

MURF860G
MURF860G
onsemi
DIODE GEN PURP 600V 8A TO220FP
MMSZ5267BT1G
MMSZ5267BT1G
onsemi
DIODE ZENER 75V 500MW SOD123
2N6284G
2N6284G
onsemi
TRANS NPN DARL 100V 20A TO204
NVD5117PLT4G-VF01
NVD5117PLT4G-VF01
onsemi
MOSFET P-CH 60V 11A/61A DPAK
MC74AC273DWR2G
MC74AC273DWR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20SOIC
MC74VHC1G32DTT1G
MC74VHC1G32DTT1G
onsemi
IC GATE OR 1CH 2-INP 5TSOP
MC74VHC1GT08EDFT2G
MC74VHC1GT08EDFT2G
onsemi
IC GATE AND 1CH 2-INP SC88A
NIS5420MT4TXG
NIS5420MT4TXG
onsemi
ELECTRONIC FUSE (EFUSE), 12V, 44
NCP1623ASNT1G
NCP1623ASNT1G
onsemi
ENHANCED HIGH EFFICIENCY POWER F
CAT811STBI-T3
CAT811STBI-T3
onsemi
IC SUPERVISOR 1 CHANNEL SOT143
FAN48610BUC33X
FAN48610BUC33X
onsemi
IC REG BOOST 3.3V 1A 9WLCSP
NCV1117ST18T3G
NCV1117ST18T3G
onsemi
IC REG LINEAR 1.8V 1A SOT223