NTMS10P02R2G
  • Share:

onsemi NTMS10P02R2G

Manufacturer No:
NTMS10P02R2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 8.8A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMS10P02R2G is a P-Channel, enhancement mode, power MOSFET produced by onsemi. This device is designed for high-efficiency power management in various applications, particularly in portable and battery-powered products. It features an ultra-low on-resistance (RDS(on)) and a logic level gate drive, making it suitable for applications requiring low power consumption and high performance.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS-20Vdc
Gate-to-Source Voltage - ContinuousVGS-12Vdc
Continuous Drain Current at 25°CID-10A
Continuous Drain Current at 70°CID-8.0A
Maximum Operating Power Dissipation at 25°CPD50W
Thermal Resistance - Junction-to-AmbientRθJA50°C/W
Gate Threshold VoltageVGS(th)-0.6 to -1.2Vdc
Static Drain-to-Source On-State ResistanceRDS(on)0.012 to 0.017Ω
Input CapacitanceCiss3100 to 3640pF
Output CapacitanceCoss1100 to 1670pF
Reverse Transfer CapacitanceCrss475 to 1010pF

Key Features

  • Ultra low RDS(on) for higher efficiency and extended battery life.
  • Logic level gate drive for easy integration with digital circuits.
  • Miniature SOIC-8 surface mount package for compact designs.
  • High speed, soft recovery diode for reduced switching losses.
  • Avalanche energy specified for robust operation.
  • Pb-Free package available.

Applications

The NTMS10P02R2G is ideal for power management in portable and battery-powered products, including cellular and cordless telephones, PCMCIA cards, and other mobile devices that require efficient power handling.

Q & A

  1. What is the maximum drain-to-source voltage of the NTMS10P02R2G? The maximum drain-to-source voltage is -20 Vdc.
  2. What is the continuous drain current at 25°C? The continuous drain current at 25°C is -10 A.
  3. What is the thermal resistance from junction to ambient? The thermal resistance from junction to ambient is 50 °C/W.
  4. What is the gate threshold voltage range? The gate threshold voltage range is -0.6 to -1.2 Vdc.
  5. What is the typical on-state resistance? The typical on-state resistance is 0.012 to 0.017 Ω.
  6. What type of package does the NTMS10P02R2G come in? The NTMS10P02R2G comes in a miniature SOIC-8 surface mount package.
  7. Is the NTMS10P02R2G Pb-Free? Yes, the NTMS10P02R2G is available in a Pb-Free package.
  8. What are some typical applications for the NTMS10P02R2G? Typical applications include power management in portable and battery-powered products such as cellular and cordless telephones and PCMCIA cards.
  9. What is the maximum operating power dissipation at 25°C? The maximum operating power dissipation at 25°C is 50 W.
  10. What is the input capacitance range? The input capacitance range is 3100 to 3640 pF.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:14mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:3640 pF @ 16 V
FET Feature:- 
Power Dissipation (Max):1.6W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

$1.80
49

Please send RFQ , we will respond immediately.

Same Series
NTMS10P02R2
NTMS10P02R2
MOSFET P-CH 20V 8.8A 8SOIC

Similar Products

Part Number NTMS10P02R2G NTMS10P02R2
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 8.8A (Ta) 8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 14mOhm @ 10A, 4.5V 14mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 4.5 V 70 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 3640 pF @ 16 V 3640 pF @ 16 V
FET Feature - -
Power Dissipation (Max) 1.6W (Ta) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

Related Product By Categories

FDD86102LZ
FDD86102LZ
onsemi
MOSFET N-CH 100V 8A/35A DPAK
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
FQA11N90-F109
FQA11N90-F109
onsemi
MOSFET N-CH 900V 11.4A TO3PN
PMPB15XP
PMPB15XP
Nexperia USA Inc.
PMPB15XP - 12 V, SINGLE P-CHANNE
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK
STD7N52DK3
STD7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
BD138G
BD138G
onsemi
TRANS PNP 60V 1.5A TO126
MMBT6429LT1G
MMBT6429LT1G
onsemi
TRANS NPN 45V 0.2A SOT23-3
2SK4177-DL-1E
2SK4177-DL-1E
onsemi
MOSFET N-CH 1500V 2A TO263-2
NVMFS5C410NLWFT3G
NVMFS5C410NLWFT3G
onsemi
MOSFET N-CH 40V 48A/315A 5DFN
MC74AC273DWR2G
MC74AC273DWR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20SOIC
MC74AC139DR2G
MC74AC139DR2G
onsemi
IC DECODER/DEMUX 1X2:4 16SOIC
MC100EP16VBDTG
MC100EP16VBDTG
onsemi
IC RCVR/DRVR ECL DIFF 5V 8TSSOP
STK672-432AN-E
STK672-432AN-E
onsemi
IC MOTOR DRIVER UNIPOLAR 19SIP
CAT1021WI30
CAT1021WI30
onsemi
CAT1021 - SUPERVISORY CIRCUIT WI
MC78L18ABPG
MC78L18ABPG
onsemi
IC REG LINEAR 18V 100MA TO92-3
MC79L15ABPG
MC79L15ABPG
onsemi
IC REG LINEAR -15V 100MA TO92-3