NTMS10P02R2G
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onsemi NTMS10P02R2G

Manufacturer No:
NTMS10P02R2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 8.8A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMS10P02R2G is a P-Channel, enhancement mode, power MOSFET produced by onsemi. This device is designed for high-efficiency power management in various applications, particularly in portable and battery-powered products. It features an ultra-low on-resistance (RDS(on)) and a logic level gate drive, making it suitable for applications requiring low power consumption and high performance.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS-20Vdc
Gate-to-Source Voltage - ContinuousVGS-12Vdc
Continuous Drain Current at 25°CID-10A
Continuous Drain Current at 70°CID-8.0A
Maximum Operating Power Dissipation at 25°CPD50W
Thermal Resistance - Junction-to-AmbientRθJA50°C/W
Gate Threshold VoltageVGS(th)-0.6 to -1.2Vdc
Static Drain-to-Source On-State ResistanceRDS(on)0.012 to 0.017Ω
Input CapacitanceCiss3100 to 3640pF
Output CapacitanceCoss1100 to 1670pF
Reverse Transfer CapacitanceCrss475 to 1010pF

Key Features

  • Ultra low RDS(on) for higher efficiency and extended battery life.
  • Logic level gate drive for easy integration with digital circuits.
  • Miniature SOIC-8 surface mount package for compact designs.
  • High speed, soft recovery diode for reduced switching losses.
  • Avalanche energy specified for robust operation.
  • Pb-Free package available.

Applications

The NTMS10P02R2G is ideal for power management in portable and battery-powered products, including cellular and cordless telephones, PCMCIA cards, and other mobile devices that require efficient power handling.

Q & A

  1. What is the maximum drain-to-source voltage of the NTMS10P02R2G? The maximum drain-to-source voltage is -20 Vdc.
  2. What is the continuous drain current at 25°C? The continuous drain current at 25°C is -10 A.
  3. What is the thermal resistance from junction to ambient? The thermal resistance from junction to ambient is 50 °C/W.
  4. What is the gate threshold voltage range? The gate threshold voltage range is -0.6 to -1.2 Vdc.
  5. What is the typical on-state resistance? The typical on-state resistance is 0.012 to 0.017 Ω.
  6. What type of package does the NTMS10P02R2G come in? The NTMS10P02R2G comes in a miniature SOIC-8 surface mount package.
  7. Is the NTMS10P02R2G Pb-Free? Yes, the NTMS10P02R2G is available in a Pb-Free package.
  8. What are some typical applications for the NTMS10P02R2G? Typical applications include power management in portable and battery-powered products such as cellular and cordless telephones and PCMCIA cards.
  9. What is the maximum operating power dissipation at 25°C? The maximum operating power dissipation at 25°C is 50 W.
  10. What is the input capacitance range? The input capacitance range is 3100 to 3640 pF.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:14mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:3640 pF @ 16 V
FET Feature:- 
Power Dissipation (Max):1.6W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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In Stock

$1.80
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Same Series
NTMS10P02R2
NTMS10P02R2
MOSFET P-CH 20V 8.8A 8SOIC

Similar Products

Part Number NTMS10P02R2G NTMS10P02R2
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 8.8A (Ta) 8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 14mOhm @ 10A, 4.5V 14mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 4.5 V 70 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 3640 pF @ 16 V 3640 pF @ 16 V
FET Feature - -
Power Dissipation (Max) 1.6W (Ta) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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