NTMFS5C426NT1G
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onsemi NTMFS5C426NT1G

Manufacturer No:
NTMFS5C426NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 41A/235A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The NTMFS5C426NT1G is a single N-Channel MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. The MOSFET is packaged in a DFN-5 (5.1x6.1 mm) package, which is lead-free and RoHS compliant. Although the device is currently discontinued, it remains relevant for existing designs and legacy systems.

Key Specifications

Parameter Value
Transistor Polarity N-Channel
Number of Channels 1 Channel
Mounting Style SMD/SMT
Vds - Drain-Source Breakdown Voltage 40 V
Minimum Operating Temperature -55°C
Maximum Operating Temperature +175°C
Pd - Power Dissipation 128 W
Qg - Gate Charge 65 nC

Key Features

  • Low On-Resistance: The NTMFS5C426NT1G offers low on-resistance, making it suitable for high-efficiency applications.
  • High Current Handling: This MOSFET can handle high current levels, making it ideal for power-intensive applications.
  • Compact Package: The DFN-5 package is compact and lead-free, making it suitable for space-constrained designs and RoHS compliance.
  • Wide Operating Temperature Range: The device operates over a wide temperature range from -55°C to +175°C, enhancing its reliability in various environmental conditions.

Applications

  • Power Management: Suitable for power management systems requiring high efficiency and low on-resistance.
  • Industrial Control: Used in industrial control systems where high current handling and reliability are crucial.
  • Automotive Systems: Applicable in automotive systems due to its wide operating temperature range and high performance.
  • Consumer Electronics: Can be used in consumer electronics where compact packaging and high efficiency are necessary.

Q & A

  1. What is the transistor polarity of the NTMFS5C426NT1G?

    The transistor polarity of the NTMFS5C426NT1G is N-Channel.

  2. What is the package type of the NTMFS5C426NT1G?

    The package type is DFN-5 (5.1x6.1 mm).

  3. What is the drain-source breakdown voltage (Vds) of the NTMFS5C426NT1G?

    The drain-source breakdown voltage (Vds) is 40 V.

  4. What is the minimum operating temperature of the NTMFS5C426NT1G?

    The minimum operating temperature is -55°C.

  5. What is the maximum operating temperature of the NTMFS5C426NT1G?

    The maximum operating temperature is +175°C.

  6. What is the power dissipation (Pd) of the NTMFS5C426NT1G?

    The power dissipation (Pd) is 128 W.

  7. What is the gate charge (Qg) of the NTMFS5C426NT1G?

    The gate charge (Qg) is 65 nC.

  8. Is the NTMFS5C426NT1G RoHS compliant?

    Yes, the NTMFS5C426NT1G is RoHS compliant.

  9. What are the typical applications of the NTMFS5C426NT1G?

    Typical applications include power management, industrial control, automotive systems, and consumer electronics.

  10. Is the NTMFS5C426NT1G currently in production?

    No, the NTMFS5C426NT1G is currently discontinued but may still be available from inventory or legacy stock.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:41A (Ta), 235A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:65 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4300 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 128W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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In Stock

$4.20
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Same Series
NTMFS5C426NT3G
NTMFS5C426NT3G
MOSFET N-CH 40V 41A/235A 5DFN

Similar Products

Part Number NTMFS5C426NT1G NTMFS5C426NT3G
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 41A (Ta), 235A (Tc) 41A (Ta), 235A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.3mOhm @ 50A, 10V 1.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V 65 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4300 pF @ 25 V 4300 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.8W (Ta), 128W (Tc) 3.8W (Ta), 128W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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