Overview
The NTMFS4841NHT1G is a high-performance, single N-channel power MOSFET produced by onsemi. This device is packaged in an SO-8FL (Pb-Free) case and is designed to offer low on-resistance, low capacitance, and optimized gate charge, making it suitable for a variety of high-power applications. The MOSFET features a drain-to-source voltage (VDSS) of 30 V and a continuous drain current (ID) of up to 57 A at a junction temperature of 25°C. It is also Pb-free, aligning with modern environmental standards.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TJ = 25°C) | ID | 13.1 | A |
| Continuous Drain Current (TJ = 85°C) | ID | 9.5 | A |
| Power Dissipation (TJ = 25°C) | PD | 2.17 | W |
| Power Dissipation (TJ = 85°C) | PD | 1.13 | W |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 30 A) | RDS(on) | 4.7 - 7.0 | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.5 - 2.5 | V |
| Operating Junction and Storage Temperature | TJ, TSTG | -55 to +150 | °C |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 180 | mJ |
Key Features
- Low on-resistance (RDS(on)) to minimize conduction losses.
- Low capacitance to minimize driver losses.
- Optimized gate charge to minimize switching losses.
- Pb-free device, compliant with environmental regulations.
- High continuous drain current capability up to 57 A at 25°C.
- Wide operating junction temperature range from -55°C to 150°C.
- High single pulse drain-to-source avalanche energy of 180 mJ.
Applications
- CPU power delivery systems.
- DC-DC converters.
- High-power switching applications.
- Power management systems in various electronic devices.
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NTMFS4841NHT1G MOSFET?
The maximum drain-to-source voltage (VDSS) is 30 V.
- What is the continuous drain current (ID) at 25°C?
The continuous drain current (ID) at 25°C is 13.1 A.
- What is the on-resistance (RDS(on)) of the MOSFET at VGS = 10 V and ID = 30 A?
The on-resistance (RDS(on)) is between 4.7 mΩ and 7.0 mΩ.
- What is the gate threshold voltage (VGS(TH)) range?
The gate threshold voltage (VGS(TH)) range is between 1.5 V and 2.5 V.
- What are the typical applications of the NTMFS4841NHT1G MOSFET?
Typical applications include CPU power delivery systems, DC-DC converters, and high-power switching applications.
- Is the NTMFS4841NHT1G MOSFET Pb-free?
Yes, the NTMFS4841NHT1G MOSFET is Pb-free.
- What is the maximum single pulse drain-to-source avalanche energy (EAS)?
The maximum single pulse drain-to-source avalanche energy (EAS) is 180 mJ.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is from -55°C to +150°C.
- What is the package type of the NTMFS4841NHT1G MOSFET?
The package type is SO-8FL (Pb-Free).
- What are the key benefits of the low on-resistance and low capacitance of the MOSFET?
The low on-resistance minimizes conduction losses, and the low capacitance minimizes driver losses, both contributing to more efficient operation.
