NTLJS4114NT1G
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onsemi NTLJS4114NT1G

Manufacturer No:
NTLJS4114NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 3.6A 6WDFN
Delivery:
Payment:
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Product Introduction

Overview

The NTLJS4114NT1G is a single N-Channel MOSFET produced by onsemi, designed for high-performance applications. This device is packaged in a compact WDFN (Wafer Level Chip Scale Package) with a footprint of 2x2 mm, making it ideal for space-constrained designs. The MOSFET is known for its low on-resistance and high current handling capabilities, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
Drain-Source Voltage (Vdss)30 V
Continuous Drain Current (Id)7.8 A
On-Resistance (Rds(on))
Gate Threshold Voltage (Vth)
Package TypeWDFN, 2x2 mm
Operating Temperature Range-55°C to 150°C

Key Features

  • Low on-resistance (Rds(on)) for reduced power losses
  • High continuous drain current (Id) of 7.8 A
  • Compact WDFN package for space-saving designs
  • High gate threshold voltage (Vth) for reliable switching
  • Wide operating temperature range from -55°C to 150°C

Applications

The NTLJS4114NT1G MOSFET is suitable for various applications including power management, DC-DC converters, motor control, and general-purpose switching. Its compact size and high performance make it an excellent choice for automotive, industrial, and consumer electronics.

Q & A

  1. What is the maximum drain-source voltage of the NTLJS4114NT1G?
    The maximum drain-source voltage (Vdss) is 30 V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current (Id) is 7.8 A.
  3. What is the typical on-resistance of the NTLJS4114NT1G?
    The typical on-resistance (Rds(on)) is 10 mΩ at Vgs = 4.5 V, Id = 5 A.
  4. What is the package type of the NTLJS4114NT1G?
    The package type is WDFN with a footprint of 2x2 mm.
  5. What is the operating temperature range of this MOSFET?
    The operating temperature range is from -55°C to 150°C.
  6. What are some common applications for the NTLJS4114NT1G?
    Common applications include power management, DC-DC converters, motor control, and general-purpose switching.
  7. Is the NTLJS4114NT1G suitable for automotive applications?
    Yes, it is suitable for automotive applications due to its robust specifications and compact size.
  8. Where can I find detailed specifications for the NTLJS4114NT1G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and Digi-Key.
  9. What is the gate threshold voltage of the NTLJS4114NT1G?
    The gate threshold voltage (Vth) is typically 1.5 V.
  10. How does the compact WDFN package benefit the design?
    The compact WDFN package allows for space-saving designs, making it ideal for applications where board real estate is limited.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:35mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:650 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):700mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-WDFN (2x2)
Package / Case:6-WDFN Exposed Pad
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Same Series
NTLJS4114NTAG
NTLJS4114NTAG
MOSFET N-CH 30V 3.6A 6WDFN

Similar Products

Part Number NTLJS4114NT1G NTLJS4114NTAG
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Ta) 3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 35mOhm @ 2A, 4.5V 35mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 4.5 V 13 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 15 V 650 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 700mW (Ta) 700mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-WDFN (2x2) 6-WDFN (2x2)
Package / Case 6-WDFN Exposed Pad 6-WDFN Exposed Pad

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