NTLJS4114NT1G
  • Share:

onsemi NTLJS4114NT1G

Manufacturer No:
NTLJS4114NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 3.6A 6WDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTLJS4114NT1G is a single N-Channel MOSFET produced by onsemi, designed for high-performance applications. This device is packaged in a compact WDFN (Wafer Level Chip Scale Package) with a footprint of 2x2 mm, making it ideal for space-constrained designs. The MOSFET is known for its low on-resistance and high current handling capabilities, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
Drain-Source Voltage (Vdss)30 V
Continuous Drain Current (Id)7.8 A
On-Resistance (Rds(on))
Gate Threshold Voltage (Vth)
Package TypeWDFN, 2x2 mm
Operating Temperature Range-55°C to 150°C

Key Features

  • Low on-resistance (Rds(on)) for reduced power losses
  • High continuous drain current (Id) of 7.8 A
  • Compact WDFN package for space-saving designs
  • High gate threshold voltage (Vth) for reliable switching
  • Wide operating temperature range from -55°C to 150°C

Applications

The NTLJS4114NT1G MOSFET is suitable for various applications including power management, DC-DC converters, motor control, and general-purpose switching. Its compact size and high performance make it an excellent choice for automotive, industrial, and consumer electronics.

Q & A

  1. What is the maximum drain-source voltage of the NTLJS4114NT1G?
    The maximum drain-source voltage (Vdss) is 30 V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current (Id) is 7.8 A.
  3. What is the typical on-resistance of the NTLJS4114NT1G?
    The typical on-resistance (Rds(on)) is 10 mΩ at Vgs = 4.5 V, Id = 5 A.
  4. What is the package type of the NTLJS4114NT1G?
    The package type is WDFN with a footprint of 2x2 mm.
  5. What is the operating temperature range of this MOSFET?
    The operating temperature range is from -55°C to 150°C.
  6. What are some common applications for the NTLJS4114NT1G?
    Common applications include power management, DC-DC converters, motor control, and general-purpose switching.
  7. Is the NTLJS4114NT1G suitable for automotive applications?
    Yes, it is suitable for automotive applications due to its robust specifications and compact size.
  8. Where can I find detailed specifications for the NTLJS4114NT1G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and Digi-Key.
  9. What is the gate threshold voltage of the NTLJS4114NT1G?
    The gate threshold voltage (Vth) is typically 1.5 V.
  10. How does the compact WDFN package benefit the design?
    The compact WDFN package allows for space-saving designs, making it ideal for applications where board real estate is limited.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:35mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:650 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):700mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-WDFN (2x2)
Package / Case:6-WDFN Exposed Pad
0 Remaining View Similar

In Stock

$0.91
902

Please send RFQ , we will respond immediately.

Same Series
NTLJS4114NTAG
NTLJS4114NTAG
MOSFET N-CH 30V 3.6A 6WDFN

Similar Products

Part Number NTLJS4114NT1G NTLJS4114NTAG
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Ta) 3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 35mOhm @ 2A, 4.5V 35mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 4.5 V 13 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 15 V 650 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 700mW (Ta) 700mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-WDFN (2x2) 6-WDFN (2x2)
Package / Case 6-WDFN Exposed Pad 6-WDFN Exposed Pad

Related Product By Categories

IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
STD80N10F7
STD80N10F7
STMicroelectronics
MOSFET N-CH 100V 70A DPAK
FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
FDBL0150N80
FDBL0150N80
onsemi
MOSFET N-CH 80V 300A 8HPSOF
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
IRF3710PBF
IRF3710PBF
Infineon Technologies
MOSFET N-CH 100V 57A TO220AB
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
STH150N10F7-2
STH150N10F7-2
STMicroelectronics
MOSFET N-CH 100V 110A H2PAK-2
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK

Related Product By Brand

2SC3646S-TD-E
2SC3646S-TD-E
onsemi
TRANS NPN 100V 1A PCP
2N3773G
2N3773G
onsemi
TRANS NPN 140V 16A TO204
FDS8935
FDS8935
onsemi
MOSFET 2P-CH 80V 2.1A 8SOIC
FGH40N60SFDTU
FGH40N60SFDTU
onsemi
IGBT FIELD STOP 600V 80A TO247-3
MC33072DR2G
MC33072DR2G
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
MC33072ADG
MC33072ADG
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
NC7SZ57P6X
NC7SZ57P6X
onsemi
IC LOGIC GATE UNIV 2INPUT SC70-6
MC74HC00ANG
MC74HC00ANG
onsemi
IC GATE NAND 4CH 2-INP 14DIP
CAT24C02YI-GT3JN
CAT24C02YI-GT3JN
onsemi
IC EEPROM 2KBIT I2C 8TSSOP
MC33025DWR2
MC33025DWR2
onsemi
IC OFFLINE SW HALF-BRDG 16SOIC
NIS5420MT4TXG
NIS5420MT4TXG
onsemi
ELECTRONIC FUSE (EFUSE), 12V, 44
NCP380LSN05AAT1G
NCP380LSN05AAT1G
onsemi
IC PWR SWITCH P-CHAN 1:1 5TSOP