NTLJF3117PT1G
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onsemi NTLJF3117PT1G

Manufacturer No:
NTLJF3117PT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 2.3A 6WDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTLJF3117PT1G, manufactured by onsemi, is a surface-mount electronic component that features a P-Channel MOSFET integrated with a Schottky diode. This device is packaged in a compact 6-WDFN (2x2 mm) package, making it suitable for space-constrained applications. The combination of a MOSFET and a Schottky diode enhances the component's performance and efficiency in various power management and switching applications.

Key Specifications

ParameterValue
Package / CaseWDFN-6 (2x2 mm)
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage20 V
Id - Continuous Drain Current2.3 A
Rds(on) - On Resistance100 mΩ @ 4.5 V, 2 A
Vgs(th) - Gate Threshold Voltage1 V @ 250 μA

Key Features

  • Compact 6-WDFN package for space-saving designs
  • P-Channel MOSFET with integrated Schottky diode for improved performance and efficiency
  • Low on-resistance (Rds(on)) of 100 mΩ @ 4.5 V, 2 A
  • High drain-source breakdown voltage (Vds) of 20 V
  • Continuous drain current (Id) of 2.3 A
  • Low gate threshold voltage (Vgs(th)) of 1 V @ 250 μA

Applications

The NTLJF3117PT1G is suitable for a variety of applications, including but not limited to:

  • Power management and switching circuits
  • DC-DC converters and power supplies
  • Motor control and drive systems
  • Audio and video equipment
  • Consumer electronics and appliances

Q & A

  1. What is the package type of the NTLJF3117PT1G? The NTLJF3117PT1G is packaged in a 6-WDFN (2x2 mm) package.
  2. What is the transistor polarity of the NTLJF3117PT1G? The transistor polarity is P-Channel.
  3. What is the drain-source breakdown voltage (Vds) of the NTLJF3117PT1G? The Vds is 20 V.
  4. What is the continuous drain current (Id) of the NTLJF3117PT1G? The Id is 2.3 A.
  5. What is the on-resistance (Rds(on)) of the NTLJF3117PT1G? The Rds(on) is 100 mΩ @ 4.5 V, 2 A.
  6. What is the gate threshold voltage (Vgs(th)) of the NTLJF3117PT1G? The Vgs(th) is 1 V @ 250 μA.
  7. Is the NTLJF3117PT1G RoHS compliant? Yes, the NTLJF3117PT1G is RoHS compliant.
  8. What are some typical applications of the NTLJF3117PT1G? Typical applications include power management and switching circuits, DC-DC converters, motor control systems, and consumer electronics.
  9. Why is the integrated Schottky diode important in the NTLJF3117PT1G? The integrated Schottky diode enhances the component's performance and efficiency by reducing losses and improving switching characteristics.
  10. Where can I find detailed specifications for the NTLJF3117PT1G? Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and LCSC.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:100mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.2 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:531 pF @ 10 V
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):710mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-WDFN (2x2)
Package / Case:6-WDFN Exposed Pad
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Same Series
NTLJF3117PTAG
NTLJF3117PTAG
MOSFET P-CH 20V 2.3A 6WDFN

Similar Products

Part Number NTLJF3117PT1G NTLJF3117PTAG
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta) 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 100mOhm @ 2A, 4.5V 100mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.2 nC @ 4.5 V 6.2 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 531 pF @ 10 V 531 pF @ 10 V
FET Feature Schottky Diode (Isolated) Schottky Diode (Isolated)
Power Dissipation (Max) 710mW (Ta) 710mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-WDFN (2x2) 6-WDFN (2x2)
Package / Case 6-WDFN Exposed Pad 6-WDFN Exposed Pad

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