Overview
The NTLJD3119CTBG is a complementary power MOSFET produced by ON Semiconductor. This device features both N-channel and P-channel MOSFETs in a single WDFN 2x2 mm package, making it highly versatile for various power management applications. The MOSFETs are designed with leading-edge trench technology, which ensures low on-resistance and excellent thermal conduction. The package includes an exposed drain pad, enhancing thermal performance, and has a low profile of less than 0.8 mm, making it suitable for thin environments. This device is also lead-free, aligning with modern environmental standards.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage (N-Channel) | VDSS | 20 | V |
| Drain-to-Source Voltage (P-Channel) | VDSS | -20 | V |
| Gate-to-Source Voltage (N-Channel) | VGS | ±8.0 | V |
| Continuous Drain Current (N-Channel, TA = 25°C) | ID | 3.8 | A |
| Continuous Drain Current (P-Channel, TA = 25°C) | ID | -3.3 | A |
| Power Dissipation (Steady State, TA = 25°C) | PD | 1.5 | W |
| Gate Threshold Voltage | VGS(th) | 1.8 | V |
| Input Capacitance (N-Channel) | CISS | 271 | pF |
| Output Capacitance (N-Channel) | COSS | 72 | pF |
| Reverse Transfer Capacitance (N-Channel) | CRSS | 43 | pF |
Key Features
- Complementary N-channel and P-channel MOSFETs in a single WDFN 2x2 mm package.
- Exposed drain pad for excellent thermal conduction.
- Footprint same as SC-88 package.
- Leading-edge trench technology for low on-resistance.
- Low profile (< 0.8 mm) for easy fit in thin environments.
- 1.8 V gate threshold voltage.
- Pb-free device.
Applications
- Synchronous DC-DC conversion circuits.
- Load/power management of portable devices like PDAs, cellular phones, and hard drives.
- Color display and camera flash regulators.
Q & A
- What is the package type of the NTLJD3119CTBG MOSFET?
The NTLJD3119CTBG MOSFET comes in a WDFN 2x2 mm package.
- What are the drain-to-source voltage ratings for the N-channel and P-channel MOSFETs?
The N-channel MOSFET has a drain-to-source voltage rating of 20 V, and the P-channel MOSFET has a rating of -20 V.
- What is the continuous drain current rating for the N-channel MOSFET at 25°C?
The continuous drain current rating for the N-channel MOSFET at 25°C is 3.8 A.
- What is the power dissipation rating for the device at steady state and 25°C?
The power dissipation rating for the device at steady state and 25°C is 1.5 W.
- What is the gate threshold voltage for the MOSFETs?
The gate threshold voltage for the MOSFETs is 1.8 V.
- What are some typical applications of the NTLJD3119CTBG MOSFET?
Typical applications include synchronous DC-DC conversion circuits, load/power management of portable devices, and color display and camera flash regulators.
- Is the NTLJD3119CTBG MOSFET lead-free?
- What is the thermal conduction feature of the WDFN package?
The WDFN package includes an exposed drain pad for excellent thermal conduction.
- What technology is used to achieve low on-resistance in the MOSFETs?
The MOSFETs use leading-edge trench technology to achieve low on-resistance.
- What is the profile height of the NTLJD3119CTBG MOSFET?
The profile height of the NTLJD3119CTBG MOSFET is less than 0.8 mm.
