Overview
The NTHL160N120SC1 is a high-performance Silicon Carbide (SiC) N-Channel MOSFET produced by onsemi. This device is part of the EliteSiC family, known for its advanced technology and superior electrical characteristics. The NTHL160N120SC1 is designed to operate at high voltages and currents, making it suitable for a variety of power electronics applications.
Key Specifications
| Parameter | Value |
|---|---|
| Voltage Rating (Vds) | 1.2 kV |
| Continuous Drain Current (Id) | 17 A |
| Pulse Drain Current (Idm) | 69 A |
| On-Resistance (Rds(on)) | 0.162 ohm |
| Maximum Junction Temperature (Tj) | 150°C |
| Minimum Junction Temperature (Tj) | -55°C |
| Package Type | TO-247 |
| Maximum Total Gate Charge | 34 nC |
Key Features
- High voltage rating of 1.2 kV, making it suitable for high-power applications.
- Low on-resistance (Rds(on)) of 0.162 ohm, reducing power losses.
- High pulse drain current capability of up to 69 A.
- Wide operating temperature range from -55°C to 150°C.
- TO-247 package for robust and reliable mounting.
Applications
The NTHL160N120SC1 is ideal for various high-power applications, including but not limited to:
- Power supplies and DC-DC converters.
- Motor drives and control systems.
- Renewable energy systems such as solar and wind power.
- Electric vehicle charging infrastructure.
- Industrial power electronics and automation systems.
Q & A
- What is the voltage rating of the NTHL160N120SC1 MOSFET?
The voltage rating of the NTHL160N120SC1 is 1.2 kV. - What is the continuous drain current of the NTHL160N120SC1?
The continuous drain current is 17 A. - What is the on-resistance (Rds(on)) of the NTHL160N120SC1?
The on-resistance is 0.162 ohm. - What is the package type of the NTHL160N120SC1?
The package type is TO-247. - What is the maximum junction temperature of the NTHL160N120SC1?
The maximum junction temperature is 150°C. - What is the minimum junction temperature of the NTHL160N120SC1?
The minimum junction temperature is -55°C. - What is the maximum total gate charge of the NTHL160N120SC1?
The maximum total gate charge is 34 nC. - In what types of applications is the NTHL160N120SC1 commonly used?
The NTHL160N120SC1 is commonly used in power supplies, motor drives, renewable energy systems, electric vehicle charging, and industrial power electronics. - Why is Silicon Carbide (SiC) technology preferred in high-power applications?
Silicon Carbide technology is preferred due to its high voltage and current handling capabilities, low on-resistance, and wide operating temperature range. - Where can I purchase the NTHL160N120SC1 MOSFET?
The NTHL160N120SC1 can be purchased from various electronic component distributors such as Farnell, Mouser, and TME.
