Overview
The NTD4904N-1G is a high-performance, single N-Channel power MOSFET produced by onsemi. This device is packaged in an IPAK (Straight Lead DPAK) and is designed to offer low conduction losses, minimal driver losses, and optimized switching performance. The NTD4904N-1G is lead-free, making it compliant with current environmental regulations.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V |
| Gate-to-Source Voltage | VGS | −20 | V |
| Continuous Drain Current (RΔJA) at TA = 25°C | ID | 17.8 | A |
| Continuous Drain Current (RΔJC) at TC = 25°C | ID | 79 | A |
| Power Dissipation (RΔJA) at TA = 25°C | PD | 2.6 | W |
| Pulsed Drain Current (tp=10μs) at TA = 25°C | IDM | 316 | A |
| Operating Junction and Storage Temperature | TJ, Tstg | −55 to 175 | °C |
| Drain-to-Source On Resistance at VGS = 10 V, ID = 30 A | RDS(on) | 3.0 - 3.7 | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.0 - 2.2 | V |
Key Features
- Low RDS(on) to minimize conduction losses
- Low capacitance to minimize driver losses
- Optimized gate charge to minimize switching losses
- Pb-free package for environmental compliance
- High continuous drain current and power dissipation capabilities
- Robust thermal performance with low junction-to-case thermal resistance
Applications
- CPU Power Delivery
- DC-DC Converters
Q & A
- What is the maximum drain-to-source voltage of the NTD4904N-1G?
The maximum drain-to-source voltage (VDSS) is 30 V.
- What is the continuous drain current at 25°C for the NTD4904N-1G?
The continuous drain current (ID) at 25°C is 17.8 A for RΔJA and 79 A for RΔJC.
- What is the power dissipation capability of the NTD4904N-1G at 25°C?
The power dissipation (PD) at 25°C is 2.6 W for RΔJA.
- What is the pulsed drain current of the NTD4904N-1G?
The pulsed drain current (IDM) for a pulse width of 10 μs is 316 A.
- What is the operating junction and storage temperature range for the NTD4904N-1G?
The operating junction and storage temperature range is from -55°C to 175°C.
- What is the typical on-resistance of the NTD4904N-1G at VGS = 10 V and ID = 30 A?
The typical on-resistance (RDS(on)) is 3.7 mΩ.
- What are the key features of the NTD4904N-1G?
The key features include low RDS(on), low capacitance, optimized gate charge, and a Pb-free package.
- In what applications is the NTD4904N-1G commonly used?
The NTD4904N-1G is commonly used in CPU power delivery and DC-DC converters.
- What is the gate threshold voltage of the NTD4904N-1G?
The gate threshold voltage (VGS(TH)) ranges from 1.0 V to 2.2 V.
- What is the thermal resistance from junction to case for the NTD4904N-1G?
The thermal resistance from junction to case (RΔJC) is 2.9 °C/W.
