NTBGS4D1N15MC
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onsemi NTBGS4D1N15MC

Manufacturer No:
NTBGS4D1N15MC
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 150V 20A/185A D2PAK
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The NTBGS4D1N15MC is a high-performance Power MOSFET produced by onsemi. This N-channel MOSFET is characterized by its robust specifications, making it suitable for a variety of power management and switching applications. With a drain-source voltage rating of 150 V and a low drain-source on-resistance of 4.1 mΩ, this device offers high efficiency and reliability in demanding environments.

Key Specifications

ParameterValue
Drain-Source Voltage (Vds)150 V
Drain-Source On-Resistance (Rds(on))4.1 mΩ @ Vgs = 10 V
Continuous Drain Current (Id)185 A
Package TypeTO-263 (D2PAK)
Gate Threshold Voltage (Vth)4.5 V
Operating Temperature Range-55°C to 150°C

Key Features

  • High drain-source voltage rating of 150 V, ensuring robust performance in high-voltage applications.
  • Low drain-source on-resistance of 4.1 mΩ, which minimizes power losses and enhances efficiency.
  • High continuous drain current of 185 A, suitable for high-power applications.
  • TO-263 (D2PAK) package, providing a compact and surface-mountable design.
  • Wide operating temperature range from -55°C to 150°C, making it versatile for various environmental conditions.

Applications

The NTBGS4D1N15MC is designed for use in a variety of high-power applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, such as battery management and power steering.
  • Industrial power management and control systems.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the drain-source voltage rating of the NTBGS4D1N15MC? The drain-source voltage rating is 150 V.
  2. What is the drain-source on-resistance of the NTBGS4D1N15MC? The drain-source on-resistance is 4.1 mΩ @ Vgs = 10 V.
  3. What is the continuous drain current of the NTBGS4D1N15MC? The continuous drain current is 185 A.
  4. What package type does the NTBGS4D1N15MC use? The NTBGS4D1N15MC uses the TO-263 (D2PAK) package.
  5. What is the gate threshold voltage of the NTBGS4D1N15MC? The gate threshold voltage is 4.5 V.
  6. What is the operating temperature range of the NTBGS4D1N15MC? The operating temperature range is from -55°C to 150°C.
  7. Is the NTBGS4D1N15MC RoHS compliant? Yes, the NTBGS4D1N15MC is RoHS compliant.
  8. What are some typical applications for the NTBGS4D1N15MC? Typical applications include power supplies, motor control systems, automotive systems, industrial power management, and renewable energy systems.
  9. Where can I purchase the NTBGS4D1N15MC? The NTBGS4D1N15MC can be purchased from various electronics distributors such as Mouser, Digi-Key, and LCSC.
  10. What are the benefits of using the NTBGS4D1N15MC in high-power applications? The benefits include high efficiency due to low on-resistance, high current handling, and robust performance in high-voltage environments.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta), 185A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V, 10V
Rds On (Max) @ Id, Vgs:4.1mOhm @ 104A, 10V
Vgs(th) (Max) @ Id:4.5V @ 574µA
Gate Charge (Qg) (Max) @ Vgs:88.9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7285 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):3.7W (Ta), 316W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK (TO-263)
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
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