NTB5404NT4G
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onsemi NTB5404NT4G

Manufacturer No:
NTB5404NT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 167A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The NTB5404NT4G is a high-performance power MOSFET produced by onsemi. This N-Channel MOSFET is designed for high-power applications, offering excellent electrical characteristics and reliability. It is available in D2PAK and TO-247 packages, making it versatile for various system designs.

Key Specifications

ParameterValue
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current167 A
RDS(on) at VGS = 10 V, ID = 40 A3.5 - 4.5 mΩ
RDS(on) at VGS = 5.0 V, ID = 15 A5.1 - 7.0 mΩ

Key Features

  • High continuous drain current of 167 A
  • Low on-resistance (RDS(on)) for efficient power handling
  • High drain-source breakdown voltage of 40 V
  • Avaliable in D2PAK and TO-247 packages for flexibility in design
  • High forward transconductance for better switching characteristics

Applications

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • High-power switching applications
  • Automotive systems requiring high reliability and performance
  • Industrial power management systems

Q & A

  1. What is the maximum continuous drain current of the NTB5404NT4G?
    The maximum continuous drain current is 167 A.
  2. What are the available package types for the NTB5404NT4G?
    The NTB5404NT4G is available in D2PAK and TO-247 packages.
  3. What is the drain-source breakdown voltage of the NTB5404NT4G?
    The drain-source breakdown voltage is 40 V.
  4. What are the typical on-resistance values for the NTB5404NT4G?
    The on-resistance (RDS(on)) is typically 3.5 - 4.5 mΩ at VGS = 10 V, ID = 40 A, and 5.1 - 7.0 mΩ at VGS = 5.0 V, ID = 15 A.
  5. What are some common applications for the NTB5404NT4G?
    Common applications include power supplies, DC-DC converters, motor control systems, high-power switching applications, and automotive systems.
  6. Why is the NTB5404NT4G suitable for high-power applications?
    It is suitable due to its high continuous drain current, low on-resistance, and high drain-source breakdown voltage.
  7. What is the significance of the forward transconductance in the NTB5404NT4G?
    The forward transconductance indicates better switching characteristics, which is crucial for high-performance applications.
  8. Can the NTB5404NT4G be used in industrial power management systems?
    Yes, it can be used in industrial power management systems due to its high reliability and performance.
  9. What is the polarity of the NTB5404NT4G MOSFET?
    The polarity is N-Channel.
  10. Where can I find detailed specifications for the NTB5404NT4G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:167A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:4.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:125 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7000 pF @ 32 V
FET Feature:- 
Power Dissipation (Max):5.4W (Ta), 254W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Same Series
NTP5404NRG
NTP5404NRG
MOSFET N-CH 40V 24A/167A TO220AB
NVB5404NT4G
NVB5404NT4G
MOSFET N-CH 40V 24A D2PAK

Similar Products

Part Number NTB5404NT4G NTB5405NT4G
Manufacturer onsemi onsemi
Product Status Obsolete Last Time Buy
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 167A (Tc) 116A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 40A, 10V 5.8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 125 nC @ 10 V 88 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7000 pF @ 32 V 4000 pF @ 32 V
FET Feature - -
Power Dissipation (Max) 5.4W (Ta), 254W (Tc) 3W (Ta), 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK D²PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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