NRVTS10100MFST1G
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onsemi NRVTS10100MFST1G

Manufacturer No:
NRVTS10100MFST1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 100V 10A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NRVTS10100MFST1G is a Very Low Forward Voltage Trench-based Schottky Rectifier produced by onsemi. This component is designed to offer high efficiency and reliability in various electronic applications. It features fast switching capabilities and exceptional temperature stability, making it suitable for a wide range of power management and rectification needs.

Key Specifications

ParameterValue
TechnologySilicon (Si)
Forward Current (If)10 A
Repetitive Reverse Voltage (Vrrm)100 V
Forward Voltage (Vf)690 mV

Key Features

  • Very low forward voltage, reducing power loss and operating temperature.
  • Fast switching with exceptional temperature stability.
  • Higher efficiency for achieving regulatory compliance.
  • Low power loss and lower operating temperature.

Applications

The NRVTS10100MFST1G is ideal for various applications including power supplies, DC-DC converters, battery charging systems, and other power management circuits where high efficiency and low forward voltage drop are critical.

Q & A

  1. What is the forward current rating of the NRVTS10100MFST1G?
    The forward current rating is 10 A.
  2. What is the repetitive reverse voltage (Vrrm) of this component?
    The repetitive reverse voltage is 100 V.
  3. What is the forward voltage (Vf) of the NRVTS10100MFST1G?
    The forward voltage is 690 mV.
  4. What technology is used in the NRVTS10100MFST1G?
    The technology used is Silicon (Si).
  5. What are the key features of the NRVTS10100MFST1G?
    The key features include very low forward voltage, fast switching, exceptional temperature stability, and higher efficiency.
  6. Where can the NRVTS10100MFST1G be used?
    It can be used in power supplies, DC-DC converters, battery charging systems, and other power management circuits.
  7. Why is the NRVTS10100MFST1G preferred in power management applications?
    It is preferred due to its low power loss and lower operating temperature, which enhance overall system efficiency.
  8. How does the NRVTS10100MFST1G contribute to regulatory compliance?
    It contributes by offering higher efficiency, which helps in achieving regulatory compliance.
  9. What are the benefits of using a trench-based Schottky rectifier like the NRVTS10100MFST1G?
    The benefits include fast switching, low forward voltage drop, and exceptional temperature stability.
  10. Where can I find detailed specifications for the NRVTS10100MFST1G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:720 mV @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:50 µA @ 100 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN, 5 Leads
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction:-55°C ~ 175°C
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In Stock

$0.90
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Same Series
NRVTS10100MFST3G
NRVTS10100MFST3G
DIODE SCHOTTKY 100V 10A 5DFN
NTS10100MFST1G
NTS10100MFST1G
DIODE SCHOTTKY 100V 10A 5DFN
NTS10100MFST3G
NTS10100MFST3G
DIODE SCHOTTKY 100V 10A 5DFN

Similar Products

Part Number NRVTS10100MFST1G NRVTS10100MFST3G NRVTS10120MFST1G NRVTS12100MFST1G NRVTS10100EMFST1G
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 120 V 100 V 100 V
Current - Average Rectified (Io) 10A 10A 10A 12A 10A
Voltage - Forward (Vf) (Max) @ If 720 mV @ 10 A 720 mV @ 10 A 820 mV @ 10 A 710 mV @ 12 A 720 mV @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 50 µA @ 100 V 50 µA @ 100 V 30 µA @ 120 V 95 µA @ 100 V 50 µA @ 100 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 150°C -55°C ~ 175°C

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