Overview
The NRVTS10100EMFST1G is a very low leakage, trench-based Schottky rectifier produced by onsemi. This component is designed to offer exceptional temperature stability, low power loss, and higher efficiency, making it suitable for a variety of high-performance applications. The device features fine lithography trench-based Schottky technology, ensuring very low leakage and fast switching capabilities.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | 100 | V |
| Average Rectified Forward Current (Rated VR, TC = 165°C) | IF(AV) | 10 | A |
| Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 163°C) | IFRM | 20 | A |
| Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) | IFSM | 200 | A |
| Storage Temperature Range | Tstg | −65 to +175 | °C |
| Operating Junction Temperature | TJ | −55 to +175 | °C |
| Thermal Resistance, Junction-to-Case, Steady State | RθJC | 2.0 | °C/W |
| Instantaneous Forward Voltage (iF = 10 A, TJ = 25°C) | vF | 0.650 | V |
Key Features
- Fine lithography trench-based Schottky technology for very low leakage.
- Fast switching with exceptional temperature stability.
- Low power loss and lower operating temperature.
- Higher efficiency for achieving regulatory compliance.
- Low thermal resistance.
- High surge capability.
- AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
- Pb-free and halide-free devices.
Applications
- Switching power supplies including notebook/netbook adapters, ATX, and flat panel display.
- High frequency and DC-DC converters.
- Freewheeling and OR-ing diodes.
- Reverse battery protection.
- LED lighting.
- Instrumentation.
Q & A
- What is the peak repetitive reverse voltage of the NRVTS10100EMFST1G?
The peak repetitive reverse voltage (VRRM) is 100 V.
- What is the average rectified forward current rating for this device?
The average rectified forward current (IF(AV)) is 10 A at a case temperature (TC) of 165°C.
- What are the storage and operating temperature ranges for this component?
The storage temperature range (Tstg) is −65 to +175°C, and the operating junction temperature (TJ) range is −55 to +175°C.
- What is the thermal resistance, junction-to-case, for this device?
The thermal resistance, junction-to-case (RθJC), is 2.0 °C/W.
- Is the NRVTS10100EMFST1G suitable for automotive applications?
- What are the typical applications of the NRVTS10100EMFST1G?
Typical applications include switching power supplies, high frequency and DC-DC converters, freewheeling and OR-ing diodes, reverse battery protection, LED lighting, and instrumentation.
- Is the NRVTS10100EMFST1G Pb-free and halide-free?
- What is the instantaneous forward voltage at 10 A and 25°C?
The instantaneous forward voltage (vF) at 10 A and 25°C is 0.650 V.
- What is the non-repetitive peak surge current rating for this device?
The non-repetitive peak surge current (IFSM) is 200 A.
- What package type is the NRVTS10100EMFST1G available in?
The device is available in an SO-8 FL (flat lead) package.
