Overview
The NTS10100EMFST1G is a very low leakage, trench-based Schottky rectifier produced by onsemi. This device is designed to offer exceptional performance in high-frequency and high-efficiency applications. It features fine lithography trench-based Schottky technology, which ensures very low leakage and fast switching capabilities. The NTS10100EMFST1G is particularly suited for applications requiring low power loss and lower operating temperatures, making it ideal for achieving regulatory compliance.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | 100 | V |
| Average Rectified Forward Current (Rated VR, TC = 165°C) | IF(AV) | 10 | A |
| Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 163°C) | IFRM | 20 | A |
| Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) | IFSM | 200 | A |
| Storage Temperature Range | Tstg | −65 to +175 | °C |
| Operating Junction Temperature | TJ | −55 to +175 | °C |
| Unclamped Inductive Switching Energy (10 mH Inductor, Non-repetitive) | EAS | 100 | mJ |
| ESD Rating (Human Body Model) | 3B | ||
| ESD Rating (Machine Model) | M4 | ||
| Thermal Resistance, Junction-to-Case, Steady State | RθJC | 2.0 | °C/W |
| Instantaneous Forward Voltage (iF = 10 A, TJ = 25°C) | vF | 0.650 | V |
Key Features
- Fine lithography trench-based Schottky technology for very low leakage
- Fast switching with exceptional temperature stability
- Low power loss and lower operating temperature
- Higher efficiency for achieving regulatory compliance
- Low thermal resistance
- High surge capability
- NRV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable
- Pb-free and halide-free devices
Applications
- Switching power supplies including notebook/netbook adapters, ATX, and flat panel displays
- High frequency and DC-DC converters
- Freewheeling and OR-ing diodes
- Reverse battery protection
- LED lighting
- Instrumentation
Q & A
- What is the peak repetitive reverse voltage of the NTS10100EMFST1G?
The peak repetitive reverse voltage (VRRM) is 100 V.
- What is the average rectified forward current rating of the NTS10100EMFST1G?
The average rectified forward current (IF(AV)) is 10 A at a case temperature (TC) of 165°C.
- What are the storage and operating temperature ranges for the NTS10100EMFST1G?
The storage temperature range (Tstg) is −65 to +175°C, and the operating junction temperature (TJ) range is −55 to +175°C.
- What is the thermal resistance of the NTS10100EMFST1G?
The thermal resistance, junction-to-case (RθJC), is 2.0 °C/W.
- Is the NTS10100EMFST1G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- What are the typical applications of the NTS10100EMFST1G?
Typical applications include switching power supplies, high frequency and DC-DC converters, freewheeling and OR-ing diodes, reverse battery protection, LED lighting, and instrumentation.
- What is the instantaneous forward voltage of the NTS10100EMFST1G at 10 A and 25°C?
The instantaneous forward voltage (vF) at 10 A and 25°C is 0.650 V.
- Is the NTS10100EMFST1G Pb-free and halide-free?
Yes, the device is Pb-free and halide-free.
- What is the non-repetitive peak surge current rating of the NTS10100EMFST1G?
The non-repetitive peak surge current (IFSM) is 200 A.
- What is the ESD rating of the NTS10100EMFST1G according to the Human Body Model and Machine Model?
The ESD rating is 3B for the Human Body Model and M4 for the Machine Model.
