NTS10100MFST1G
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onsemi NTS10100MFST1G

Manufacturer No:
NTS10100MFST1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 100V 10A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTS10100MFST1G is a Very Low Forward Voltage Trench-based Schottky Rectifier produced by onsemi. This device is designed to offer exceptional performance in various high-frequency and power conversion applications. It features fine lithography trench-based Schottky technology, which ensures very low forward voltage and low leakage current. The rectifier is known for its fast switching capabilities, low power loss, and higher efficiency, making it suitable for achieving regulatory compliance.

Key Specifications

RatingSymbolValueUnit
Peak Repetitive Reverse VoltageVRRM100V
Average Rectified Forward Current (Rated VR, TC = 137°C)IF(AV)10A
Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 134°C)IFRM16A
Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)IFSM200A
Storage Temperature RangeTstg−65 to +150°C
Operating Junction TemperatureTJ−55 to +150°C
Thermal Resistance, Junction-to-Case, Steady StateRθJC2.0°C/W
Instantaneous Forward Voltage (iF = 10 Amps, TJ = 25°C)vF0.620V

Key Features

  • Fine lithography trench-based Schottky technology for very low forward voltage and low leakage current.
  • Fast switching with exceptional temperature stability.
  • Low power loss and lower operating temperature.
  • Higher efficiency for achieving regulatory compliance.
  • Low thermal resistance.
  • High surge capability.
  • AEC-Q101 qualified and PPAP capable for automotive and other critical applications.
  • Pb-Free and Halide-Free devices.

Applications

  • Switching power supplies, including notebook/netbook adapters, ATX, and flat panel display.
  • High frequency and DC-DC converters.
  • Freewheeling and OR-ing diodes.
  • Reverse battery protection.
  • Instrumentation.

Q & A

  1. What is the peak repetitive reverse voltage of the NTS10100MFST1G?
    The peak repetitive reverse voltage is 100 V.
  2. What is the average rectified forward current rating of the NTS10100MFST1G?
    The average rectified forward current is 10 A at a case temperature of 137°C.
  3. What is the thermal resistance, junction-to-case, of the NTS10100MFST1G?
    The thermal resistance, junction-to-case, is 2.0 °C/W.
  4. Is the NTS10100MFST1G suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other critical applications.
  5. What is the instantaneous forward voltage at 10 A and 25°C?
    The instantaneous forward voltage at 10 A and 25°C is 0.620 V.
  6. What are the storage and operating temperature ranges for the NTS10100MFST1G?
    The storage temperature range is −65 to +150°C, and the operating junction temperature range is −55 to +150°C.
  7. What package type is the NTS10100MFST1G available in?
    The device is available in an SO-8 FL (Flat Lead) package.
  8. Is the NTS10100MFST1G Pb-Free and Halide-Free?
    Yes, the device is Pb-Free and Halide-Free.
  9. What are some typical applications of the NTS10100MFST1G?
    Typical applications include switching power supplies, high frequency and DC-DC converters, freewheeling and OR-ing diodes, reverse battery protection, and instrumentation.
  10. What is the non-repetitive peak surge current rating of the NTS10100MFST1G?
    The non-repetitive peak surge current is 200 A.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:720 mV @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:70 µA @ 100 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN, 5 Leads
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction:-55°C ~ 150°C
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NTS10100MFST3G
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Similar Products

Part Number NTS10100MFST1G NTS10120MFST1G NTS12100MFST1G NTS10100MFST3G NTS10100EMFST1G
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Active Obsolete Obsolete
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 120 V 100 V 100 V 100 V
Current - Average Rectified (Io) 10A 10A 12A 10A 10A
Voltage - Forward (Vf) (Max) @ If 720 mV @ 10 A 820 mV @ 10 A 730 mV @ 12 A 690 mV @ 10 A 720 mV @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 70 µA @ 100 V 30 µA @ 120 V 55 µA @ 100 V 70 µA @ 100 V 50 µA @ 100 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 175°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 175°C

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