NJT4031NT1G
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onsemi NJT4031NT1G

Manufacturer No:
NJT4031NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 3A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NJT4031NT1G is a bipolar power transistor from onsemi, designed for high-performance applications. This NPN silicon transistor is part of the NJT4031N series and is specifically marked with the NJV prefix, indicating its suitability for automotive and other applications requiring unique site and control change requirements. It is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with stringent automotive standards.

Key Specifications

RatingSymbolValueUnit
Collector-Emitter VoltageVCEO40Vdc
Collector-Base VoltageVCB40Vdc
Emitter-Base VoltageVEB6.0Vdc
Base Current - ContinuousIB1.0Adc
Collector Current - ContinuousIC3.0Adc
Collector Current - PeakICM5.0Adc
Total Power Dissipation (TA = 25°C)PD2.0W
Thermal Resistance, Junction-to-AmbientRJA64°C/W
Maximum Lead Temperature for SolderingTL260°C
Operating and Storage Junction Temperature RangeTJ, Tstg-55 to +150°C

Key Features

  • Epoxy meets UL 94, V-0 @ 0.125 in, ensuring high safety standards.
  • NJV prefix indicates AEC-Q101 qualification and PPAP capability, making it suitable for automotive and other demanding applications.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant, aligning with environmental regulations.
  • High collector current of up to 3.0 A and peak current of 5.0 A, suitable for power-intensive applications.
  • Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)), enhancing efficiency.
  • High current-gain bandwidth product (fT) of 215 MHz, indicating good high-frequency performance.

Applications

The NJT4031NT1G is designed for various high-power applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics such as power management, motor control, and other high-reliability applications.
  • Industrial power control: Its high current and voltage ratings make it ideal for industrial power control systems, including motor drives and power supplies.
  • Consumer electronics: It can be used in high-power consumer electronics such as audio amplifiers and power adapters.
  • General-purpose power switching: Its robust specifications make it a versatile choice for general-purpose power switching applications.

Q & A

  1. What is the maximum collector-emitter voltage of the NJT4031NT1G?
    The maximum collector-emitter voltage (VCEO) is 40 Vdc.
  2. What is the continuous collector current rating of the NJT4031NT1G?
    The continuous collector current (IC) is 3.0 Adc.
  3. Is the NJT4031NT1G RoHS compliant?
    Yes, the NJT4031NT1G is Pb-free, halogen-free/BFR-free, and RoHS compliant.
  4. What is the thermal resistance, junction-to-ambient, of the NJT4031NT1G?
    The thermal resistance, junction-to-ambient (RJA), is 64 °C/W.
  5. What is the maximum lead temperature for soldering?
    The maximum lead temperature for soldering is 260 °C.
  6. What is the operating and storage junction temperature range of the NJT4031NT1G?
    The operating and storage junction temperature range is -55 to +150 °C.
  7. What is the current-gain bandwidth product (fT) of the NJT4031NT1G?
    The current-gain bandwidth product (fT) is 215 MHz.
  8. Is the NJT4031NT1G suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  9. What package type does the NJT4031NT1G come in?
    The NJT4031NT1G comes in a SOT-223 (TO-261) package.
  10. How many devices are shipped per reel for the NJT4031NT1G?
    The NJT4031NT1G is shipped in quantities of 1000 per tape and reel.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 300mA, 3A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 1A, 1V
Power - Max:2 W
Frequency - Transition:215MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223 (TO-261)
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Same Series
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NJV4031NT3G
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Similar Products

Part Number NJT4031NT1G NJT4031NT3G NJV4031NT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 3 A 3 A 3 A
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 300mA, 3A 300mV @ 300mA, 3A 300mV @ 300mA, 3A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A, 1V 200 @ 1A, 1V 200 @ 1A, 1V
Power - Max 2 W 2 W 2 W
Frequency - Transition 215MHz 215MHz 215MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261) SOT-223 (TO-261)

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