NJT4031NT3G
  • Share:

onsemi NJT4031NT3G

Manufacturer No:
NJT4031NT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 3A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NJT4031NT3G is a high-performance NPN bipolar junction transistor (BJT) manufactured by onsemi. This transistor is designed for a wide range of applications requiring high current and voltage handling capabilities. It is packaged in the SOT-223 (TO-261) surface mount format, making it suitable for modern electronic designs where space efficiency is crucial.

Key Specifications

ParameterValue
Transistor TypeNPN Bipolar Junction Transistor
Maximum Collector-Base Voltage (Vcbo)40 V
Maximum Collector-Emitter Voltage (Vceo)40 V
Maximum Emitter-Base Voltage (Vebo)5 V
Maximum Collector Current (Ic)3 A
Maximum Power Dissipation (Pd)2 W
Transition Frequency (ft)215 MHz
Package TypeSOT-223 (TO-261)

Key Features

  • High current handling capability up to 3 A.
  • High voltage handling capability up to 40 V.
  • High transition frequency of 215 MHz, suitable for high-frequency applications.
  • Surface mount SOT-223 package for efficient board space utilization.
  • Pb-free, making it compliant with environmental regulations.

Applications

The NJT4031NT3G is versatile and can be used in various applications, including:

  • Power amplifiers and switches.
  • High-frequency amplifiers and oscillators.
  • Automotive and industrial control systems.
  • Audio and video equipment.
  • General-purpose amplification and switching circuits.

Q & A

  1. What is the maximum collector current of the NJT4031NT3G?
    The maximum collector current is 3 A.
  2. What is the package type of the NJT4031NT3G?
    The package type is SOT-223 (TO-261).
  3. What is the transition frequency of the NJT4031NT3G?
    The transition frequency is 215 MHz.
  4. Is the NJT4031NT3G Pb-free?
    Yes, the NJT4031NT3G is Pb-free.
  5. What is the maximum power dissipation of the NJT4031NT3G?
    The maximum power dissipation is 2 W.
  6. What are some common applications of the NJT4031NT3G?
    Common applications include power amplifiers, high-frequency amplifiers, automotive and industrial control systems, and general-purpose amplification and switching circuits.
  7. What is the polarity of the NJT4031NT3G transistor?
    The polarity is NPN.
  8. What is the maximum collector-base voltage of the NJT4031NT3G?
    The maximum collector-base voltage is 40 V.
  9. Where can I find detailed specifications for the NJT4031NT3G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and Digi-Key.
  10. Is the NJT4031NT3G suitable for high-frequency applications?
    Yes, with a transition frequency of 215 MHz, it is suitable for high-frequency applications.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 300mA, 3A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 1A, 1V
Power - Max:2 W
Frequency - Transition:215MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223 (TO-261)
0 Remaining View Similar

In Stock

$0.58
1,298

Please send RFQ , we will respond immediately.

Same Series
NJT4031NT3G
NJT4031NT3G
TRANS NPN 40V 3A SOT223
NJV4031NT1G
NJV4031NT1G
TRANS NPN 40V 3A SOT223
NJV4031NT3G
NJV4031NT3G
TRANS NPN 40V 3A SOT223

Similar Products

Part Number NJT4031NT3G NJV4031NT3G NJT4031NT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 3 A 3 A 3 A
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 300mA, 3A 300mV @ 300mA, 3A 300mV @ 300mA, 3A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A, 1V 200 @ 1A, 1V 200 @ 1A, 1V
Power - Max 2 W 2 W 2 W
Frequency - Transition 215MHz 215MHz 215MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261) SOT-223 (TO-261)

Related Product By Categories

PMBT2907A,215
PMBT2907A,215
Nexperia USA Inc.
TRANS PNP 60V 0.6A TO236AB
BCP54-10,135
BCP54-10,135
Nexperia USA Inc.
TRANS NPN 45V 1A SOT223
BC857BWE6327
BC857BWE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
2SC5658M3T5G
2SC5658M3T5G
onsemi
TRANS NPN 50V 0.1A SOT723
PHN203,518
PHN203,518
NXP Semiconductors
NEXPERIA PHN203 - SMALL SIGNAL F
MMBT3906LT1HTSA1
MMBT3906LT1HTSA1
Infineon Technologies
TRANS PNP 40V 0.2A SOT23
BD140G
BD140G
onsemi
TRANS PNP 80V 1.5A TO126
BC856BMBYL
BC856BMBYL
Nexperia USA Inc.
TRANS PNP 60V 0.1A DFN1006B-3
BC807-40/6215
BC807-40/6215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
MMBT2222AT
MMBT2222AT
Fairchild Semiconductor
TRANS NPN 40V 0.6A SOT523F
TIP122FP
TIP122FP
STMicroelectronics
TRANS NPN DARL 100V 5A TO220FP
BC857CWE6327BTSA1
BC857CWE6327BTSA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323

Related Product By Brand

MMSZ13T1G
MMSZ13T1G
onsemi
DIODE ZENER 13V 500MW SOD123
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
SBC856ALT1G
SBC856ALT1G
onsemi
TRANS PNP 65V 0.1A SOT23-3
BD679G
BD679G
onsemi
TRANS NPN DARL 80V 4A TO126
NTB6413ANG
NTB6413ANG
onsemi
MOSFET N-CH 100V 42A D2PAK
FGH40N60SFDTU
FGH40N60SFDTU
onsemi
IGBT FIELD STOP 600V 80A TO247-3
MC33072ADG
MC33072ADG
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
CAT24C512C8UTR
CAT24C512C8UTR
onsemi
IC EEPROM 512KBIT I2C 8WLCSP
UC3843AD1G
UC3843AD1G
onsemi
UC3843 CURRENT-MODE PWM CONTROLL
NCV1117ST18T3G
NCV1117ST18T3G
onsemi
IC REG LINEAR 1.8V 1A SOT223
MC33269DTRK-3.3
MC33269DTRK-3.3
onsemi
IC REG LDO 0.8A 3.3V DPAK
NCV4299D2
NCV4299D2
onsemi
IC REG LINEAR 5V 150MA 14SOIC