NJT4030PT3G
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onsemi NJT4030PT3G

Manufacturer No:
NJT4030PT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 40V 3A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NJT4030PT3G is a PNP bipolar power transistor manufactured by onsemi. This device is part of the NJT4030P series, known for its high current and voltage handling capabilities. The NJT4030PT3G is packaged in a SOT-223 case, which is Pb-free, halogen-free, and RoHS compliant. It is designed to meet various industrial and automotive requirements, including AEC-Q101 qualification and PPAP capability for automotive applications.

Key Specifications

Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 40 Vdc
Collector-Base Voltage VCB 40 Vdc
Emitter-Base Voltage VEB 6.0 Vdc
Base Current - Continuous IB 1.0 Adc
Collector Current - Continuous IC 3.0 Adc
Collector Current - Peak ICM 5.0 Adc
Total Power Dissipation (at TA = 25°C) PD 2.0 W
Thermal Resistance (Junction-to-Ambient) RJA 64 / 155 °C/W
Maximum Lead Temperature for Soldering TL 260 °C
Operating and Storage Junction Temperature Range TJ, Tstg -55 to +150 °C

Key Features

  • Epoxy meets UL 94, V-0 @ 0.125 in.
  • NJV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant.
  • High collector current of up to 3.0 A and collector-emitter voltage of up to 40 V.
  • Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).
  • High DC current gain (hFE) with values up to 400.
  • High current-gain-bandwidth product (fT) of up to 160 MHz.

Applications

The NJT4030PT3G is suitable for a variety of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive electronics.
  • Industrial power supplies: Its high current and voltage ratings make it suitable for power supply applications.
  • Motor control: It can be used in motor control circuits due to its high current handling capability.
  • Switching and linear amplifiers: Its low saturation voltages and high current gain make it suitable for amplifier applications.

Q & A

  1. What is the maximum collector-emitter voltage of the NJT4030PT3G?

    The maximum collector-emitter voltage (VCEO) is 40 Vdc.

  2. What is the continuous collector current rating of the NJT4030PT3G?

    The continuous collector current (IC) is 3.0 Adc.

  3. Is the NJT4030PT3G RoHS compliant?
  4. What is the thermal resistance (junction-to-ambient) of the NJT4030PT3G?

    The thermal resistance (RJA) is 64 °C/W or 155 °C/W depending on the mounting conditions.

  5. What are the operating and storage junction temperature ranges for the NJT4030PT3G?

    The operating and storage junction temperature range is -55 to +150 °C.

  6. Is the NJT4030PT3G suitable for automotive applications?
  7. What is the maximum lead temperature for soldering purposes?

    The maximum lead temperature for soldering purposes is 260 °C for 5 seconds.

  8. What is the typical collector-emitter saturation voltage (VCE(sat)) of the NJT4030PT3G?

    The typical collector-emitter saturation voltage (VCE(sat)) ranges from 0.150 to 0.500 Vdc depending on the collector and base currents.

  9. What is the current-gain-bandwidth product (fT) of the NJT4030PT3G?

    The current-gain-bandwidth product (fT) is up to 160 MHz.

  10. What package type is the NJT4030PT3G available in?

    The NJT4030PT3G is available in a SOT-223 package.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 300mA, 3A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 1A, 1V
Power - Max:2 W
Frequency - Transition:160MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223 (TO-261)
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Similar Products

Part Number NJT4030PT3G NJV4030PT3G NJT4030PT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 3 A 3 A 3 A
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 300mA, 3A 500mV @ 300mA, 3A 500mV @ 300mA, 3A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A, 1V 200 @ 1A, 1V 200 @ 1A, 1V
Power - Max 2 W 2 W 2 W
Frequency - Transition 160MHz 160MHz 160MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261) SOT-223 (TO-261)

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