NJT4030PT1G
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onsemi NJT4030PT1G

Manufacturer No:
NJT4030PT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 40V 3A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NJT4030PT1G is a PNP bipolar power transistor manufactured by onsemi. This device is designed for high-current applications and is packaged in the SOT-223 (TO-261) surface mount format. It is part of the NJT4030P series, which includes variants suitable for automotive and other applications requiring unique site and control change requirements, such as those qualified to AEC-Q101 standards.

The transistor is Pb-free, halogen-free/BFR-free, and RoHS compliant, making it environmentally friendly. The epoxy used in the packaging meets UL 94, V-0 @ 0.125 in standards, ensuring high reliability and safety.

Key Specifications

Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 40 Vdc
Collector-Base Voltage VCB 40 Vdc
Emitter-Base Voltage VEB 6.0 Vdc
Base Current - Continuous IB 1.0 Adc
Collector Current - Continuous IC 3.0 Adc
Collector Current - Peak ICM 5.0 Adc
ESD - Human Body Model HBM 3B V
ESD - Machine Model MM C V
Total Power Dissipation (TA = 25°C) PD 2.0 / 0.80 W
Thermal Resistance Junction-to-Case RJC 11 °C/W
Thermal Resistance Junction-to-Ambient RJA 64 / 155 °C/W
Maximum Lead Temperature for Soldering TL 260 °C
Operating and Storage Junction Temperature Range TJ, Tstg -55 to +150 °C

Key Features

  • Epoxy meets UL 94, V-0 @ 0.125 in, ensuring high safety standards.
  • NJV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant.
  • High collector current of up to 3.0 A and collector-emitter voltage of up to 40 V.
  • High current gain bandwidth product of up to 160 MHz.
  • Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).

Applications

  • Automotive systems: Suitable for applications requiring AEC-Q101 qualification and PPAP capability.
  • Power amplifiers: High current and voltage ratings make it suitable for power amplifier applications.
  • Switching circuits: Low saturation voltages and high current gain make it ideal for switching circuits.
  • Industrial control systems: Reliable operation in a wide temperature range and high safety standards.
  • Consumer electronics: Pb-free and RoHS compliant, making it suitable for a wide range of consumer electronic devices.

Q & A

  1. What is the maximum collector-emitter voltage of the NJT4030PT1G transistor?

    The maximum collector-emitter voltage (VCEO) is 40 Vdc.

  2. What is the continuous collector current rating of the NJT4030PT1G?

    The continuous collector current (IC) is 3.0 Adc.

  3. Is the NJT4030PT1G RoHS compliant?
  4. What is the thermal resistance junction-to-ambient of the NJT4030PT1G?

    The thermal resistance junction-to-ambient (RJA) is 64 °C/W and 155 °C/W depending on the mounting conditions.

  5. What is the maximum lead temperature for soldering purposes?

    The maximum lead temperature for soldering purposes is 260 °C.

  6. What is the operating and storage junction temperature range of the NJT4030PT1G?

    The operating and storage junction temperature range is -55 to +150 °C.

  7. What is the current gain bandwidth product of the NJT4030PT1G?

    The current gain bandwidth product (fT) is up to 160 MHz.

  8. Is the NJT4030PT1G suitable for automotive applications?
  9. What is the package type of the NJT4030PT1G?

    The NJT4030PT1G is packaged in the SOT-223 (TO-261) surface mount format.

  10. What are the typical collector-emitter saturation voltage and base-emitter saturation voltage?

    The typical collector-emitter saturation voltage (VCE(sat)) is up to 0.5 V, and the base-emitter saturation voltage (VBE(sat)) is up to 1.0 V.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 300mA, 3A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 1A, 1V
Power - Max:2 W
Frequency - Transition:160MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223 (TO-261)
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Similar Products

Part Number NJT4030PT1G NJV4030PT1G NJT4030PT3G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 3 A 3 A 3 A
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 300mA, 3A 500mV @ 300mA, 3A 500mV @ 300mA, 3A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A, 1V 200 @ 1A, 1V 200 @ 1A, 1V
Power - Max 2 W 2 W 2 W
Frequency - Transition 160MHz 160MHz 160MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261) SOT-223 (TO-261)

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