Overview
The NJV4030PT1G is a bipolar power transistor manufactured by onsemi, designed for high-speed switching applications where power efficiency is crucial. This PNP transistor is part of the NJT4030P series and is distinguished by its low collector-emitter saturation voltage and high DC current gain. The device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring stringent quality standards. It is also Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 40 | Vdc |
| Collector-Base Voltage | VCB | 40 | Vdc |
| Emitter-Base Voltage | VEB | 6.0 | Vdc |
| Base Current - Continuous | IB | 1.0 | Adc |
| Collector Current - Continuous | IC | 3.0 | Adc |
| Collector Current - Peak | ICM | 5.0 | Adc |
| ESD - Human Body Model | HBM | 3B | V |
| ESD - Machine Model | MM | C | V |
| Total Power Dissipation (TA = 25°C) | PD | 2.0 | W |
| Thermal Resistance Junction-to-Case | RJC | 11 | °C/W |
| Thermal Resistance Junction-to-Ambient | RJA | 64 / 155 | °C/W |
| Maximum Lead Temperature for Soldering | TL | 260 | °C |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -55 to +150 | °C |
Key Features
- Low Collector-Emitter Saturation Voltage: Ensures efficient operation in high-speed switching applications.
- High DC Current Gain: Provides reliable performance with a minimum DC current gain of 200 and a maximum of 400.
- High Current-Gain Bandwidth Product: Up to 160 MHz, suitable for high-frequency applications.
- AEC-Q101 Qualified and PPAP Capable: Meets automotive and other stringent quality requirements.
- Pb-Free, Halogen-Free, and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
- Epoxy Meets UL 94, V-0 @ 0.125 in: High safety standards for the epoxy material.
Applications
- Voltage Regulation: Suitable for voltage regulator circuits due to its low VCE(sat).
- Power Management for Portable Devices: Ideal for battery-powered devices requiring efficient power management.
- Switching Regulators: Used in switching regulator circuits for efficient power conversion.
- Inductive Load Drivers: Capable of driving inductive loads such as motors and solenoids.
- Battery Chargers: Used in battery charging circuits for efficient and reliable operation.
- Portable Devices and Computing Products: Suitable for a wide range of portable and computing applications.
Q & A
- What is the maximum collector-emitter voltage of the NJV4030PT1G transistor?
The maximum collector-emitter voltage (VCEO) is 40 Vdc.
- What is the continuous collector current rating of the NJV4030PT1G?
The continuous collector current (IC) is 3.0 Adc.
- Is the NJV4030PT1G transistor RoHS compliant?
Yes, the NJV4030PT1G is Pb-free, halogen-free, and RoHS compliant.
- What is the thermal resistance junction-to-ambient of the NJV4030PT1G?
The thermal resistance junction-to-ambient (RJA) is 64°C/W or 155°C/W depending on the mounting conditions.
- What are the typical applications of the NJV4030PT1G transistor?
Typical applications include voltage regulation, power management for portable devices, switching regulators, inductive load drivers, and battery chargers.
- What is the maximum lead temperature for soldering the NJV4030PT1G?
The maximum lead temperature for soldering is 260°C for 5 seconds.
- Is the NJV4030PT1G qualified for automotive applications?
Yes, the NJV4030PT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other stringent applications.
- What is the current-gain bandwidth product of the NJV4030PT1G?
The current-gain bandwidth product (fT) is up to 160 MHz.[
- What is the package type of the NJV4030PT1G transistor?
The package type is SOT-223-4 / TO-261-4D.
- What is the operating and storage junction temperature range of the NJV4030PT1G?
The operating and storage junction temperature range is -55°C to +150°C.
