NDT3055L
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onsemi NDT3055L

Manufacturer No:
NDT3055L
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 4A SOT-223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The NDT3055L is an N-Channel Logic Level Enhancement Mode Field Effect Transistor (FET) produced by onsemi. This device is designed using onsemi's proprietary high cell density DMOS technology, making it suitable for a variety of low-voltage applications. The NDT3055L is particularly noted for its fast switching capabilities and low in-line power loss, which are critical in modern electronic systems.

Key Specifications

ParameterValue
Voltage Rating (Vds)60 V
Current Rating (Id)4 A (Ta)
Power Dissipation (Pd)3 W (Ta)
On-Resistance (Rds(on))100 mΩ
Package TypeSOT-223-4 (Surface Mount)

Key Features

  • Logic Level Input: Compatible with low-voltage logic signals.
  • Fast Switching: Ideal for applications requiring high-speed switching.
  • Low On-Resistance: Minimizes power loss during operation.
  • High Cell Density DMOS Technology: Enhances performance and efficiency.
  • Surface Mount Package: SOT-223-4, facilitating easy integration into modern PCB designs.

Applications

The NDT3055L is suited for various low-voltage applications, including:

  • DC Motor Control: Efficient control of DC motors due to its fast switching and low power loss.
  • DC/DC Conversion: Ideal for power conversion circuits requiring high efficiency and fast switching times.
  • Power Management: Used in power management circuits where low on-resistance and fast switching are essential.

Q & A

  1. What is the voltage rating of the NDT3055L?
    The voltage rating (Vds) of the NDT3055L is 60 V.
  2. What is the current rating of the NDT3055L?
    The current rating (Id) of the NDT3055L is 4 A (Ta).
  3. What is the power dissipation of the NDT3055L?
    The power dissipation (Pd) of the NDT3055L is 3 W (Ta).
  4. What is the on-resistance of the NDT3055L?
    The on-resistance (Rds(on)) of the NDT3055L is 100 mΩ.
  5. In what package is the NDT3055L available?
    The NDT3055L is available in a SOT-223-4 surface mount package.
  6. What technology is used in the NDT3055L?
    The NDT3055L is produced using onsemi's proprietary high cell density DMOS technology.
  7. Is the NDT3055L suitable for high-speed switching applications?
    Yes, the NDT3055L is particularly suited for applications requiring fast switching.
  8. What are some common applications of the NDT3055L?
    The NDT3055L is commonly used in DC motor control, DC/DC conversion, and power management circuits.
  9. Is the NDT3055L compatible with low-voltage logic signals?
    Yes, the NDT3055L has a logic level input, making it compatible with low-voltage logic signals.
  10. Where can I find detailed specifications for the NDT3055L?
    Detailed specifications for the NDT3055L can be found on the official onsemi website, as well as on distributor sites like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:100mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:345 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3W (Ta)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-4
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number NDT3055L NDT3055
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 4A (Ta) 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 4A, 10V 100mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V 15 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 345 pF @ 25 V 250 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 3W (Ta) 3W (Ta)
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223-4 SOT-223-4
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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