NDT2955
  • Share:

onsemi NDT2955

Manufacturer No:
NDT2955
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 2.5A SOT-223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NDT2955 is a 60V P-Channel MOSFET produced by ON Semiconductor using their high voltage Trench process. This device is optimized for power management applications and is designed to withstand high energy in avalanche and commutation modes. It is particularly suited for low-voltage, high-speed switching applications in power supplies, converters, and power motor controls.

Key Specifications

CharacteristicSymbolValueUnit
Drain-to-Source VoltageVDSS-60Vdc
Gate-to-Source Voltage (Continuous)VGS±20Vdc
Gate-to-Source Voltage (Non-repetitive, tp ≤ 10 ms)VGSM±25Vdc
Drain Current (Continuous at Ta = 25°C)ID-12A
Drain Current (Single Pulse, tp ≤ 10 ms)IDM-18A
Total Power Dissipation at Ta = 25°CPD55W
Operating and Storage Temperature RangeTJ, Tstg-55 to 175°C
Single Pulse Drain-to-Source Avalanche EnergyEAS216mJ
Thermal Resistance - Junction-to-CaseRθJC2.73°C/W
Thermal Resistance - Junction-to-AmbientRθJA71.4°C/W
Maximum Lead Temperature for SolderingTL260°C
Static Drain-to-Source On-State ResistanceRDS(on)0.155Ω
Gate Threshold VoltageVGS(th)-2.0 to -4.0Vdc

Key Features

  • Avalanche Energy Specified
  • IDSS and VDS(on) Specified at Elevated Temperature
  • Designed for low-voltage, high-speed switching applications
  • Withstands high energy in avalanche and commutation modes
  • NVD and SVD prefixes for automotive and other applications requiring unique site and control change requirements; AEC-Q101 Qualified and PPAP Capable
  • Pb-Free and RoHS Compliant

Applications

The NDT2955 is particularly well-suited for various power management applications, including:

  • Power supplies
  • Converters
  • Power motor controls
  • Bridge circuits where diode speed and commutating safe operating areas are critical

Q & A

  1. What is the maximum drain-to-source voltage of the NDT2955?
    The maximum drain-to-source voltage (VDSS) is -60 Vdc.
  2. What is the continuous drain current rating at Ta = 25°C?
    The continuous drain current (ID) is -12 A.
  3. What is the total power dissipation at Ta = 25°C?
    The total power dissipation (PD) is 55 W.
  4. What is the operating and storage temperature range?
    The operating and storage temperature range is -55 to 175 °C.
  5. Is the NDT2955 Pb-Free and RoHS Compliant?
    Yes, the NDT2955 is Pb-Free and RoHS Compliant.
  6. What are the typical applications of the NDT2955?
    The NDT2955 is used in power supplies, converters, power motor controls, and bridge circuits.
  7. What is the gate threshold voltage range?
    The gate threshold voltage (VGS(th)) range is -2.0 to -4.0 Vdc.
  8. What is the static drain-to-source on-state resistance?
    The static drain-to-source on-state resistance (RDS(on)) is typically 0.155 Ω.
  9. Is the NDT2955 suitable for automotive applications?
    Yes, the NDT2955 with NVD and SVD prefixes is suitable for automotive and other applications requiring unique site and control change requirements; it is AEC-Q101 Qualified and PPAP Capable.
  10. What is the maximum lead temperature for soldering?
    The maximum lead temperature for soldering is 260 °C.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:300mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:601 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-4
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

$0.72
197

Please send RFQ , we will respond immediately.

Related Product By Categories

STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
NVF2955T1G
NVF2955T1G
onsemi
MOSFET P-CH 60V 2.6A SOT223
STN1NK80Z
STN1NK80Z
STMicroelectronics
MOSFET N-CH 800V 250MA SOT223
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
STP22NM60N
STP22NM60N
STMicroelectronics
MOSFET N-CH 600V 16A TO220AB
STH150N10F7-2
STH150N10F7-2
STMicroelectronics
MOSFET N-CH 100V 110A H2PAK-2
BBS3002-TL-1E
BBS3002-TL-1E
onsemi
MOSFET P-CH 60V 100A D2PAK
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH
FDC658APG
FDC658APG
onsemi
MOSFET P-CH 30V 4A SSOT6

Related Product By Brand

MMSZ5233BT1G
MMSZ5233BT1G
onsemi
DIODE ZENER 6V 500MW SOD123
SMUN5313DW1T1G
SMUN5313DW1T1G
onsemi
TRANS PREBIAS 1NPN 1PNP 50V SC88
2N3773G
2N3773G
onsemi
TRANS NPN 140V 16A TO204
FDG6306P
FDG6306P
onsemi
MOSFET 2P-CH 20V 600MA SC88
FDMS86200
FDMS86200
onsemi
MOSFET N-CH 150V 9.6A/35A 8PQFN
BSS138LT7G
BSS138LT7G
onsemi
MOSFET N-CH 50V 200MA SOT23-3
NCV2820MUTBG
NCV2820MUTBG
onsemi
IC AMP CLASS D MONO 8UDFN
NCV33274ADR2G
NCV33274ADR2G
onsemi
IC OPAMP GP 4 CIRCUIT 14SOIC
NC7SZ57P6X
NC7SZ57P6X
onsemi
IC LOGIC GATE UNIV 2INPUT SC70-6
MC100ELT21DR2G
MC100ELT21DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
NCV7719DQR2G
NCV7719DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
NCP177AMX330TCG
NCP177AMX330TCG
onsemi
IC REG LINEAR 3.3V 500MA 4XDFN