NDT2955
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onsemi NDT2955

Manufacturer No:
NDT2955
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 2.5A SOT-223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NDT2955 is a 60V P-Channel MOSFET produced by ON Semiconductor using their high voltage Trench process. This device is optimized for power management applications and is designed to withstand high energy in avalanche and commutation modes. It is particularly suited for low-voltage, high-speed switching applications in power supplies, converters, and power motor controls.

Key Specifications

CharacteristicSymbolValueUnit
Drain-to-Source VoltageVDSS-60Vdc
Gate-to-Source Voltage (Continuous)VGS±20Vdc
Gate-to-Source Voltage (Non-repetitive, tp ≤ 10 ms)VGSM±25Vdc
Drain Current (Continuous at Ta = 25°C)ID-12A
Drain Current (Single Pulse, tp ≤ 10 ms)IDM-18A
Total Power Dissipation at Ta = 25°CPD55W
Operating and Storage Temperature RangeTJ, Tstg-55 to 175°C
Single Pulse Drain-to-Source Avalanche EnergyEAS216mJ
Thermal Resistance - Junction-to-CaseRθJC2.73°C/W
Thermal Resistance - Junction-to-AmbientRθJA71.4°C/W
Maximum Lead Temperature for SolderingTL260°C
Static Drain-to-Source On-State ResistanceRDS(on)0.155Ω
Gate Threshold VoltageVGS(th)-2.0 to -4.0Vdc

Key Features

  • Avalanche Energy Specified
  • IDSS and VDS(on) Specified at Elevated Temperature
  • Designed for low-voltage, high-speed switching applications
  • Withstands high energy in avalanche and commutation modes
  • NVD and SVD prefixes for automotive and other applications requiring unique site and control change requirements; AEC-Q101 Qualified and PPAP Capable
  • Pb-Free and RoHS Compliant

Applications

The NDT2955 is particularly well-suited for various power management applications, including:

  • Power supplies
  • Converters
  • Power motor controls
  • Bridge circuits where diode speed and commutating safe operating areas are critical

Q & A

  1. What is the maximum drain-to-source voltage of the NDT2955?
    The maximum drain-to-source voltage (VDSS) is -60 Vdc.
  2. What is the continuous drain current rating at Ta = 25°C?
    The continuous drain current (ID) is -12 A.
  3. What is the total power dissipation at Ta = 25°C?
    The total power dissipation (PD) is 55 W.
  4. What is the operating and storage temperature range?
    The operating and storage temperature range is -55 to 175 °C.
  5. Is the NDT2955 Pb-Free and RoHS Compliant?
    Yes, the NDT2955 is Pb-Free and RoHS Compliant.
  6. What are the typical applications of the NDT2955?
    The NDT2955 is used in power supplies, converters, power motor controls, and bridge circuits.
  7. What is the gate threshold voltage range?
    The gate threshold voltage (VGS(th)) range is -2.0 to -4.0 Vdc.
  8. What is the static drain-to-source on-state resistance?
    The static drain-to-source on-state resistance (RDS(on)) is typically 0.155 Ω.
  9. Is the NDT2955 suitable for automotive applications?
    Yes, the NDT2955 with NVD and SVD prefixes is suitable for automotive and other applications requiring unique site and control change requirements; it is AEC-Q101 Qualified and PPAP Capable.
  10. What is the maximum lead temperature for soldering?
    The maximum lead temperature for soldering is 260 °C.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:300mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:601 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-4
Package / Case:TO-261-4, TO-261AA
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