NDS9407-G
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onsemi NDS9407-G

Manufacturer No:
NDS9407-G
Manufacturer:
onsemi
Package:
Bulk
Description:
NDS9407-G - MOSFET BULK
Delivery:
Payment:
iso14001
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iso9001
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Product Introduction

Overview

The NDS9407-G is a P-Channel MOSFET from onsemi, utilizing the advanced PowerTrench process. This device is optimized for power management applications that require a wide range of gate drive voltage ratings, specifically from 4.5 V to 20 V. It is designed to offer high performance, low on-resistance, and fast switching speeds, making it suitable for various high-power applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDSS) -60 V
Gate-Source Voltage (VGSS) ±20 V
Continuous Drain Current (ID) -3.0 A
Pulsed Drain Current (ID) -12 A
Maximum Power Dissipation (PD) 2.5 W
Operating and Storage Junction Temperature Range (TJ, TSTG) -55 to +175 °C
Thermal Resistance, Junction-to-Ambient (RθJA) 50 °C/W
Thermal Resistance, Junction-to-Case (RθJC) 25 °C/W
On-Resistance (RDS(ON)) @ VGS = -10 V 150 mΩ
On-Resistance (RDS(ON)) @ VGS = -4.5 V 240 mΩ
Gate Threshold Voltage (VGS(th)) -1 to -1.6 V
Gate Charge (Qg) @ VGS = 10 V 22 nC nC
Input Capacitance (Ciss) @ VDS = 30 V 732 pF pF

Key Features

  • High performance trench technology for extremely low RDS(ON)
  • Low gate charge and fast switching speed
  • High power and current handling capability
  • Pb-free and halide-free
  • Wide range of gate drive voltage ratings (4.5 V – 20 V)

Applications

  • Power management
  • Load switch
  • Battery protection

Q & A

  1. What is the maximum drain-source voltage of the NDS9407-G?

    The maximum drain-source voltage (VDSS) is -60 V.

  2. What is the continuous drain current rating of the NDS9407-G?

    The continuous drain current (ID) is -3.0 A.

  3. What is the maximum gate-source voltage for the NDS9407-G?

    The maximum gate-source voltage (VGSS) is ±20 V.

  4. What are the typical on-resistance values for the NDS9407-G?

    The on-resistance (RDS(ON)) is 150 mΩ at VGS = -10 V and 240 mΩ at VGS = -4.5 V.

  5. What is the thermal resistance, junction-to-ambient, for the NDS9407-G?

    The thermal resistance, junction-to-ambient (RθJA), is 50 °C/W.

  6. What are the operating and storage temperature ranges for the NDS9407-G?

    The operating and storage junction temperature range (TJ, TSTG) is -55 to +175 °C.

  7. Is the NDS9407-G Pb-free and halide-free?

    Yes, the NDS9407-G is Pb-free and halide-free.

  8. What are some common applications for the NDS9407-G?

    Common applications include power management, load switch, and battery protection.

  9. What is the maximum power dissipation for the NDS9407-G?

    The maximum power dissipation (PD) is 2.5 W.

  10. What is the gate charge for the NDS9407-G at VGS = 10 V?

    The gate charge (Qg) at VGS = 10 V is 22 nC.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:150mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:732 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number NDS9407-G NDS9407_G
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta) 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 3A, 10V 150mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V 22 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 732 pF @ 30 V 732 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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