Overview
The NDS331N is an N-Channel logic level enhancement mode power field effect transistor produced by ON Semiconductor. It utilizes ON Semiconductor's proprietary, high cell density, DMOS technology, which is designed to minimize on-state resistance. This transistor is particularly suited for low voltage applications in devices such as notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits where fast switching and low in-line power loss are essential.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDSS) | 20 | V |
| Gate-Source Voltage (VGSS) | ±8 | V |
| Maximum Drain Current (ID) - Continuous | 1.3 | A |
| Maximum Drain Current (ID) - Pulsed | 10 | A |
| Maximum Power Dissipation (PD) | 0.5 | W |
| On-State Resistance (RDS(on)) @ VGS = 2.7 V | 0.21 | Ω |
| On-State Resistance (RDS(on)) @ VGS = 4.5 V | 0.16 | Ω |
| Operating and Storage Temperature Range | -55 to +150 | °C |
| Package Type | SOT-23-3 / SUPERSOT-23 |
Key Features
- High density cell design for extremely low RDS(on)
- Exceptional on-resistance and maximum DC current capability
- Industry standard outline SOT-23 surface mount package using proprietary SUPERSOT™-3 design for superior thermal and electrical capabilities
- Pb-Free device
Applications
The NDS331N is suitable for various low voltage applications, including:
- Notebook computers
- Portable phones
- PCMCIA cards
- Other battery-powered circuits where fast switching and low in-line power loss are required
Q & A
- What is the maximum drain-source voltage (VDSS) of the NDS331N?
The maximum drain-source voltage (VDSS) is 20 V. - What is the maximum continuous drain current (ID) of the NDS331N?
The maximum continuous drain current (ID) is 1.3 A. - What is the on-state resistance (RDS(on)) at VGS = 2.7 V?
The on-state resistance (RDS(on)) at VGS = 2.7 V is 0.21 Ω. - What is the on-state resistance (RDS(on)) at VGS = 4.5 V?
The on-state resistance (RDS(on)) at VGS = 4.5 V is 0.16 Ω. - What is the operating and storage temperature range of the NDS331N?
The operating and storage temperature range is -55 to +150 °C. - What package type does the NDS331N use?
The NDS331N uses the SOT-23-3 / SUPERSOT-23 package type. - Is the NDS331N a Pb-Free device?
Yes, the NDS331N is a Pb-Free device. - What are some typical applications of the NDS331N?
Typical applications include notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits. - What is the maximum power dissipation (PD) of the NDS331N?
The maximum power dissipation (PD) is 0.5 W. - What technology is used in the production of the NDS331N?
The NDS331N is produced using ON Semiconductor's proprietary, high cell density, DMOS technology.
