MTP12P10G
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onsemi MTP12P10G

Manufacturer No:
MTP12P10G
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET P-CH 100V 12A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MTP12P10G is a P-channel power MOSFET manufactured by Onsemi, designed for high-performance switching applications. It is particularly suited for medium voltage applications where high-speed power switching is required. The MOSFET features a durable design, making it suitable for various industrial scenarios, including switching regulators, converters, solenoid and relay drivers.

Key Specifications

Parameter Value Parameter Value
Part Status Obsolete Compliance PbAHP
Package Type TO-220-3 Case Outline 221A
MSL Type NA MSL Temp (°C) 0
Container Type TUBE Container Qty. 50
Channel Polarity P-Channel Configuration Single
V(BR)DSS Min (V) 100 VGS Max (V) 20
ID Max (A) 12 PD Max (W) 75
Tj Max (°C) 150 Rds On (Max) @ Id, Vgs 300 mOhm @ 6A, 10V
Qg (Max) @ Vgs 50 nC @ 10V Coss (Max) @ Vds 575 pF

Key Features

  • Pulse by Pulse Current Limiting for Fault Protection
  • Elevated Temperature Operation Up to 100°C
  • Rapid Fall Time and Soft Shut Down for EMI Reduction
  • High Surge Current Capability for Inductive Load Applications
  • Silicon Gate for Fast Switching Speeds
  • Soft Turn-On and Fall Times for Reduced EMI
  • Low On-Resistance of 0.3 Ohm
  • High Continuous Drain Current of 12 A

Applications

The MTP12P10G is commonly used in applications requiring high levels of power and efficiency, such as:

  • Power supplies
  • Motor control
  • Automotive systems
  • DC-DC converters
  • Industrial equipment
  • LED lighting applications
  • Switching regulators and converters
  • Solenoid and relay drivers

Q & A

  1. Q: What is the maximum continuous drain current supported by the MTP12P10G?

    A: The MTP12P10G supports a maximum continuous drain current of 12 A.

  2. Q: Can the MTP12P10G be used for high-power applications?

    A: Yes, the MTP12P10G is designed for high-performance switching applications, making it suitable for high-power circuits and systems.

  3. Q: What is the maximum drain-source voltage (Vds) of the MTP12P10G?

    A: The maximum drain-source voltage (Vds) of the MTP12P10G is 100 V.

  4. Q: What is the maximum gate-source voltage (Vgs) of the MTP12P10G?

    A: The maximum gate-source voltage (Vgs) of the MTP12P10G is ±20 V.

  5. Q: What is the package type of the MTP12P10G?

    A: The MTP12P10G comes in a TO-220-3 package type.

  6. Q: What is the maximum junction temperature (Tj) of the MTP12P10G?

    A: The maximum junction temperature (Tj) of the MTP12P10G is 150 °C.

  7. Q: Does the MTP12P10G have any fault protection features?

    A: Yes, the MTP12P10G features pulse by pulse current limiting for fault protection.

  8. Q: How does the MTP12P10G reduce EMI?

    A: The MTP12P10G reduces EMI through rapid fall time and soft shut down, as well as soft turn-on and fall times.

  9. Q: What is the warranty period for the MTP12P10G when purchased from Ovaga?

    A: Ovaga offers a 1-year warranty on the MTP12P10G.

  10. Q: How can I ensure the authenticity of the MTP12P10G when purchasing from a distributor?

    A: Distributors like Ovaga ensure authenticity by rigorously testing and verifying the credentials of original Onsemi manufacturers and authorized agents.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:300mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:920 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):75W (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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