MTP12P10G
  • Share:

onsemi MTP12P10G

Manufacturer No:
MTP12P10G
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET P-CH 100V 12A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MTP12P10G is a P-channel power MOSFET manufactured by Onsemi, designed for high-performance switching applications. It is particularly suited for medium voltage applications where high-speed power switching is required. The MOSFET features a durable design, making it suitable for various industrial scenarios, including switching regulators, converters, solenoid and relay drivers.

Key Specifications

Parameter Value Parameter Value
Part Status Obsolete Compliance PbAHP
Package Type TO-220-3 Case Outline 221A
MSL Type NA MSL Temp (°C) 0
Container Type TUBE Container Qty. 50
Channel Polarity P-Channel Configuration Single
V(BR)DSS Min (V) 100 VGS Max (V) 20
ID Max (A) 12 PD Max (W) 75
Tj Max (°C) 150 Rds On (Max) @ Id, Vgs 300 mOhm @ 6A, 10V
Qg (Max) @ Vgs 50 nC @ 10V Coss (Max) @ Vds 575 pF

Key Features

  • Pulse by Pulse Current Limiting for Fault Protection
  • Elevated Temperature Operation Up to 100°C
  • Rapid Fall Time and Soft Shut Down for EMI Reduction
  • High Surge Current Capability for Inductive Load Applications
  • Silicon Gate for Fast Switching Speeds
  • Soft Turn-On and Fall Times for Reduced EMI
  • Low On-Resistance of 0.3 Ohm
  • High Continuous Drain Current of 12 A

Applications

The MTP12P10G is commonly used in applications requiring high levels of power and efficiency, such as:

  • Power supplies
  • Motor control
  • Automotive systems
  • DC-DC converters
  • Industrial equipment
  • LED lighting applications
  • Switching regulators and converters
  • Solenoid and relay drivers

Q & A

  1. Q: What is the maximum continuous drain current supported by the MTP12P10G?

    A: The MTP12P10G supports a maximum continuous drain current of 12 A.

  2. Q: Can the MTP12P10G be used for high-power applications?

    A: Yes, the MTP12P10G is designed for high-performance switching applications, making it suitable for high-power circuits and systems.

  3. Q: What is the maximum drain-source voltage (Vds) of the MTP12P10G?

    A: The maximum drain-source voltage (Vds) of the MTP12P10G is 100 V.

  4. Q: What is the maximum gate-source voltage (Vgs) of the MTP12P10G?

    A: The maximum gate-source voltage (Vgs) of the MTP12P10G is ±20 V.

  5. Q: What is the package type of the MTP12P10G?

    A: The MTP12P10G comes in a TO-220-3 package type.

  6. Q: What is the maximum junction temperature (Tj) of the MTP12P10G?

    A: The maximum junction temperature (Tj) of the MTP12P10G is 150 °C.

  7. Q: Does the MTP12P10G have any fault protection features?

    A: Yes, the MTP12P10G features pulse by pulse current limiting for fault protection.

  8. Q: How does the MTP12P10G reduce EMI?

    A: The MTP12P10G reduces EMI through rapid fall time and soft shut down, as well as soft turn-on and fall times.

  9. Q: What is the warranty period for the MTP12P10G when purchased from Ovaga?

    A: Ovaga offers a 1-year warranty on the MTP12P10G.

  10. Q: How can I ensure the authenticity of the MTP12P10G when purchasing from a distributor?

    A: Distributors like Ovaga ensure authenticity by rigorously testing and verifying the credentials of original Onsemi manufacturers and authorized agents.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:300mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:920 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):75W (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

-
43

Please send RFQ , we will respond immediately.

Related Product By Categories

PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
STH275N8F7-2AG
STH275N8F7-2AG
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-2
FDT1600N10ALZ
FDT1600N10ALZ
onsemi
MOSFET N-CH 100V 5.6A SOT223-4
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
NTMFS4834NT1G
NTMFS4834NT1G
onsemi
MOSFET N-CH 30V 13A/130A 5DFN
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

SURA8210T3G
SURA8210T3G
onsemi
DIODE GEN PURP 100V 2A SMA
MMBTA55LT1G
MMBTA55LT1G
onsemi
TRANS PNP 60V 0.5A SOT23-3
TIP145G
TIP145G
onsemi
TRANS PNP DARL 60V 10A TO247-3
FDA28N50F
FDA28N50F
onsemi
MOSFET N-CH 500V 28A TO3PN
FDD2572-F085
FDD2572-F085
onsemi
MOSFET N-CH 150V 4A/29A TO252AA
J113-D74Z
J113-D74Z
onsemi
JFET N-CH 35V 625MW TO92
NCV33274ADR2G
NCV33274ADR2G
onsemi
IC OPAMP GP 4 CIRCUIT 14SOIC
MC74HC00ADG
MC74HC00ADG
onsemi
IC GATE NAND 4CH 2-INP 14SOIC
MC74HC00ANG
MC74HC00ANG
onsemi
IC GATE NAND 4CH 2-INP 14DIP
LC709203FXE-01MH
LC709203FXE-01MH
onsemi
IC BATT MON LI-ION 1CELL 9WLCSP
MC33153DR2
MC33153DR2
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
NCP1566MNTXG
NCP1566MNTXG
onsemi
IC PWM CTLR ACT CLAMP 24QFN