MJE200G
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onsemi MJE200G

Manufacturer No:
MJE200G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 40V 5A TO126
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJE200G is a bipolar power transistor manufactured by onsemi, designed for low-voltage, low-power, and high-gain applications. This NPN transistor is particularly suited for general-purpose amplifier uses, including audio amplifier applications. It is available in various packages such as TO-225 and SOT-363/SC-88, making it versatile for different design requirements.

Key Specifications

Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 40 Vdc
Collector-Base Voltage VCB 25 Vdc
Emitter-Base Voltage VEB 5 Vdc
Collector Current IC 10 A
DC Current Gain hFE 100-200 -

Key Features

  • High DC Current Gain: The MJE200G offers a high DC current gain, making it suitable for high-gain amplifier applications.
  • Low Collector-Emitter Saturation Voltage: This feature reduces power losses and improves efficiency in low-voltage applications.
  • Low Power Consumption: Designed for low-power applications, this transistor is energy-efficient and suitable for battery-powered devices.
  • Versatile Packaging: Available in various packages such as TO-225 and SOT-363/SC-88, allowing for flexibility in design and layout.

Applications

  • Audio Amplifiers: The MJE200G is particularly suited for high-gain audio amplifier applications due to its high DC current gain and low power consumption.
  • General-Purpose Amplifiers: It can be used in a variety of general-purpose amplifier applications where low voltage and high gain are required.
  • Power Switching: Its high collector current and low VCE(sat) make it suitable for power switching applications.

Q & A

  1. What is the maximum collector-emitter voltage of the MJE200G?

    The maximum collector-emitter voltage (VCEO) of the MJE200G is 40 Vdc.

  2. What is the typical DC current gain of the MJE200G?

    The DC current gain (hFE) of the MJE200G is typically between 100 and 200.

  3. In what packages is the MJE200G available?

    The MJE200G is available in packages such as TO-225 and SOT-363/SC-88.

  4. What are the primary applications of the MJE200G?

    The MJE200G is primarily used in audio amplifier and general-purpose amplifier applications.

  5. What is the maximum collector current of the MJE200G?

    The maximum collector current (IC) of the MJE200G is 10 A.

  6. Is the MJE200G suitable for high-power applications?

    No, the MJE200G is designed for low-power applications).

  7. What is the emitter-base voltage rating of the MJE200G?

    The emitter-base voltage (VEB) rating of the MJE200G is 5 Vdc).

  8. Can the MJE200G be used in power switching applications?
  9. Where can I find detailed specifications for the MJE200G?

    Detailed specifications for the MJE200G can be found in the datasheet available on the onsemi website or through distributors like Mouser and RS Components).

  10. Is the MJE200G an NPN or PNP transistor?

    The MJE200G is an NPN transistor).

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):5 A
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:1.8V @ 1A, 5A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:45 @ 2A, 1V
Power - Max:15 W
Frequency - Transition:65MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126
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Similar Products

Part Number MJE200G MJE210G MJE270G MJE700G MJE800G MJE200
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete Obsolete Obsolete
Transistor Type NPN PNP NPN - Darlington PNP - Darlington NPN - Darlington NPN
Current - Collector (Ic) (Max) 5 A 5 A 2 A 4 A 4 A 5 A
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V 100 V 60 V 60 V 40 V
Vce Saturation (Max) @ Ib, Ic 1.8V @ 1A, 5A 1.8V @ 1A, 5A 3V @ 1.2mA, 120mA 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 1.8V @ 1A, 5A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 1mA 100µA 100µA -
DC Current Gain (hFE) (Min) @ Ic, Vce 45 @ 2A, 1V 45 @ 2A, 1V 1500 @ 120mA, 10V 750 @ 1.5A, 3V 750 @ 1.5A, 3V 45 @ 2A, 1V
Power - Max 15 W 15 W 1.5 W 40 W 40 W 15 W
Frequency - Transition 65MHz 65MHz 6MHz - - 65MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126 TO-126 TO-126 TO-126 TO-126 TO-126

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