MJE700G
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onsemi MJE700G

Manufacturer No:
MJE700G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS PNP DARL 60V 4A TO126
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJE700G is a Darlington power transistor manufactured by onsemi. This PNP transistor is part of onsemi's family of high-current, high-voltage bipolar power transistors. It is designed to handle high current and voltage requirements, making it suitable for various power management and control applications. However, it is important to note that the MJE700G is currently scheduled for obsolescence and will be discontinued by the manufacturer.

Key Specifications

Parameter Value
Transistor Type PNP - Darlington
Current - Collector (Ic) (Max) 4 A
Voltage - Collector Emitter Breakdown (Max) 60 V
Operating Voltage Up to 80 V
Power Dissipation 40 W (for MJE700G)
Lifecycle Status End of Life: Scheduled for obsolescence

Key Features

  • High current handling capability of up to 4 A
  • High voltage handling capability of up to 60 V collector-emitter breakdown
  • High power dissipation of 40 W
  • Darlington configuration for high current gain
  • Suitable for high-power applications requiring reliable and efficient performance

Applications

  • Power management and control systems
  • Motor control and drive systems
  • High-power switching applications
  • Automotive and industrial control systems
  • Power supplies and DC-DC converters

Q & A

  1. What is the MJE700G transistor type?

    The MJE700G is a PNP Darlington transistor.

  2. What is the maximum collector current of the MJE700G?

    The maximum collector current is 4 A.

  3. What is the maximum collector-emitter breakdown voltage of the MJE700G?

    The maximum collector-emitter breakdown voltage is 60 V.

  4. What is the operating voltage range of the MJE700G?

    The operating voltage can go up to 80 V.

  5. What is the power dissipation of the MJE700G?

    The power dissipation is 40 W.

  6. Is the MJE700G still in production?

    No, the MJE700G is scheduled for obsolescence and will be discontinued by the manufacturer.

  7. What are some common applications of the MJE700G?

    Common applications include power management and control systems, motor control, high-power switching, automotive and industrial control systems, and power supplies.

  8. What are the key features of the MJE700G?

    The key features include high current and voltage handling, high power dissipation, and Darlington configuration for high current gain.

  9. Where can I find detailed specifications for the MJE700G?

    Detailed specifications can be found on the datasheet available from sources like Digi-Key, Mouser, and the official onsemi website.

  10. What should I consider when replacing the MJE700G due to its obsolescence?

    When replacing the MJE700G, consider the specifications and performance requirements of your application and select a compatible transistor that meets or exceeds these requirements.

Product Attributes

Transistor Type:PNP - Darlington
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max):100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 1.5A, 3V
Power - Max:40 W
Frequency - Transition:- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126
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Similar Products

Part Number MJE700G MJE702G MJE800G MJE703G MJE200G MJE700
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Active Obsolete
Transistor Type PNP - Darlington PNP - Darlington NPN - Darlington PNP - Darlington NPN PNP - Darlington
Current - Collector (Ic) (Max) 4 A 4 A 4 A 4 A 5 A 4 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 60 V 80 V 40 V 60 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.8V @ 40mA, 2A 1.8V @ 1A, 5A 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max) 100µA 100µA 100µA 100µA 100nA (ICBO) 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 2A, 3V 45 @ 2A, 1V 750 @ 1.5A, 3V
Power - Max 40 W 40 W 40 W 40 W 15 W 40 W
Frequency - Transition - - - - 65MHz -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126 TO-126 TO-126 TO-126 TO-126 TO-126

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