Overview
The MJE800G is a Darlington power transistor manufactured by onsemi. It is part of the MJE800 series, which includes complementary silicon power transistors designed for general-purpose amplifier and low-speed switching applications. These transistors are known for their high DC current gain and monolithic construction with built-in base-emitter resistors to limit leakage and multiplication.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 80 | Vdc |
| Collector-Base Voltage | VCB | 80 | Vdc |
| Emitter-Base Voltage | VEB | 5.0 | Vdc |
| Collector Current | IC | 4.0 | Adc |
| Base Current | IB | 0.1 | Adc |
| Total Power Dissipation @ TC = 25°C | PD | 40 | W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | –55 to +150 | °C |
| Thermal Resistance, Junction-to-Case | RθJC | 3.12 | °C/W |
| Thermal Resistance, Junction-to-Ambient | RθJA | 83.3 | °C/W |
Key Features
- High DC Current Gain: hFE = 2000 (Typ) @ IC = 2.0 Adc
- Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage and Multiplication
- Choice of Packages: TO-225 (Pb-Free and RoHS Compliant)
- High Collector-Emitter Breakdown Voltage: Up to 80 Vdc
- Low Collector-Emitter Saturation Voltage: Typically 2.5 to 3.0 Vdc
Applications
The MJE800G is suitable for various applications, including general-purpose amplifiers and low-speed switching circuits. It can be used in power supplies, motor control systems, and other electronic devices that require high current gain and reliable operation.
Q & A
- What is the maximum collector-emitter voltage for the MJE800G?
The maximum collector-emitter voltage (VCEO) for the MJE800G is 80 Vdc. - What is the typical DC current gain of the MJE800G?
The typical DC current gain (hFE) of the MJE800G is 2000 at IC = 2.0 Adc. - What is the maximum collector current for the MJE800G?
The maximum collector current (IC) for the MJE800G is 4.0 Adc. - Is the MJE800G Pb-Free and RoHS compliant?
Yes, the MJE800G is Pb-Free and RoHS compliant. - What is the thermal resistance from junction to case for the MJE800G?
The thermal resistance from junction to case (RθJC) for the MJE800G is 3.12 °C/W. - What is the operating junction temperature range for the MJE800G?
The operating and storage junction temperature range for the MJE800G is –55 to +150 °C. - What type of package does the MJE800G come in?
The MJE800G comes in a TO-225 package. - What are some common applications for the MJE800G?
The MJE800G is commonly used in general-purpose amplifiers, low-speed switching circuits, power supplies, and motor control systems. - How does the MJE800G handle thermal dissipation?
The MJE800G has a thermal resistance from junction to ambient (RθJA) of 83.3 °C/W and requires careful consideration of thermal management to ensure reliable operation. - What are the base-emitter on voltage and collector-emitter saturation voltage for the MJE800G?
The base-emitter on voltage (VBE(on)) is typically 2.5 to 3.0 Vdc, and the collector-emitter saturation voltage (VCE(sat)) is typically 2.5 to 3.0 Vdc.
