Overview
The MJE802G is a Darlington Bipolar Power Transistor manufactured by onsemi. It is designed for general-purpose amplifier and low-speed switching applications. This transistor is part of the MJE800 series, which includes complementary PNP transistors such as the MJE700, MJE702, and MJE703. The MJE802G is known for its high DC current gain and monolithic construction with built-in base-emitter resistors, making it suitable for a variety of power handling tasks.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 80 | Vdc |
| Collector-Base Voltage | VCB | 80 | Vdc |
| Emitter-Base Voltage | VEB | 5.0 | Vdc |
| Collector Current | IC | 4.0 | Adc |
| Base Current | IB | 0.1 | Adc |
| Total Power Dissipation @ TC = 25°C | PD | 40 | W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | –55 to +150 | °C |
| Thermal Resistance, Junction-to-Case | RJC | 3.12 | °C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | 83.3 | °C/W |
| DC Current Gain (hFE) | hFE | 100 @ 4A @ 3V | 750 @ 1.5A @ 3V |
Key Features
- High DC Current Gain: The MJE802G has a high DC current gain (hFE) of up to 750 at 1.5 A and 100 at 4 A, making it highly efficient for amplification tasks.
- Monolithic Construction: The transistor features monolithic construction with built-in base-emitter resistors to limit leakage and improve performance.
- Pb-Free and RoHS Compliant: The MJE802G is lead-free and compliant with RoHS standards, ensuring environmental safety and regulatory compliance.
- High Power Handling: With a maximum collector-emitter voltage of 80 V and a maximum collector current of 4 A, this transistor is capable of handling significant power loads.
- Wide Operating Temperature Range: The transistor can operate over a junction temperature range of –55 to +150°C, making it suitable for various environmental conditions.
Applications
The MJE802G is versatile and can be used in several applications, including:
- General-purpose amplifiers: Due to its high DC current gain, it is suitable for amplifier circuits.
- Low-speed switching applications: It can be used in switching circuits where high current and voltage handling are required.
- Power supplies: The transistor's high power dissipation capability makes it a good choice for power supply circuits.
- Motor control: It can be used in motor control circuits due to its ability to handle high currents and voltages.
Q & A
- What is the maximum collector-emitter voltage of the MJE802G?
The maximum collector-emitter voltage (VCEO) of the MJE802G is 80 Vdc.
- What is the maximum collector current of the MJE802G?
The maximum collector current (IC) of the MJE802G is 4.0 Adc.
- What is the DC current gain (hFE) of the MJE802G?
The DC current gain (hFE) of the MJE802G is 100 @ 4A @ 3V and 750 @ 1.5A @ 3V.
- Is the MJE802G Pb-Free and RoHS compliant?
- What is the operating junction temperature range of the MJE802G?
The operating junction temperature range of the MJE802G is –55 to +150°C.
- What type of package does the MJE802G come in?
The MJE802G comes in a TO-225 package.
- What are some common applications of the MJE802G?
The MJE802G is commonly used in general-purpose amplifiers, low-speed switching applications, power supplies, and motor control circuits.
- What is the thermal resistance, junction-to-case (RJC) of the MJE802G?
The thermal resistance, junction-to-case (RJC) of the MJE802G is 3.12 °C/W.
- What is the maximum total power dissipation of the MJE802G at TC = 25°C?
The maximum total power dissipation of the MJE802G at TC = 25°C is 40 W.
- Is the MJE802G suitable for high-frequency applications?
No, the MJE802G is designed for general-purpose amplifier and low-speed switching applications, not high-frequency applications.
