MJE270G
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onsemi MJE270G

Manufacturer No:
MJE270G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN DARL 100V 2A TO126
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJE270G is a high-performance NPN Darlington power transistor manufactured by onsemi. This device is part of the MJE270/MJE271 series, which includes complementary silicon power transistors. The MJE270G is known for its high safe operating area, high DC current gain, and robust thermal characteristics, making it suitable for a variety of power management and control applications.

Key Specifications

CharacteristicSymbolValueUnit
Collector-Emitter VoltageVCEO100Vdc
Collector-Base VoltageVCB100Vdc
Emitter-Base VoltageVEB5.0Vdc
Collector Current - ContinuousIC2.0Adc
Collector Current - PeakICM4.0Adc
Base CurrentIB0.1Adc
Total Power Dissipation @ TC = 25°CPD15W
Thermal Resistance, Junction-to-CaseRJC8.33°C/W
Thermal Resistance, Junction-to-AmbientRJA83.3°C/W
DC Current Gain @ IC = 120 mA, VCE = 10 VhFE1500 (Min)
Collector-Emitter Saturation Voltage @ IC = 120 mA, IB = 1.2 mAVCE(sat)3.0Vdc
Base-Emitter On Voltage @ IC = 120 mA, VCE = 10 VVBE(on)2.0Vdc
Operating and Storage Junction Temperature RangeTJ, Tstg-65 to +150°C

Key Features

  • High Safe Operating Area (IS/B @ 40 V, 1.0 s = 0.375 A)
  • High DC Current Gain (hFE @ 120 mA, 10 V = 1500 Min)
  • Collector-Emitter Sustaining Voltage (VCEO(sus) = 100 Vdc Min)
  • Pb-Free and RoHS Compliant
  • High Collector Current Capability (Continuous: 2.0 Adc, Peak: 4.0 Adc)
  • Low Collector-Emitter Saturation Voltage (VCE(sat) = 3.0 Vdc)
  • Base-Emitter On Voltage (VBE(on) = 2.0 Vdc)

Applications

The MJE270G is suitable for various power management and control applications, including:

  • Power amplifiers and drivers
  • Motor control circuits
  • Relay and solenoid drivers
  • High-current switching applications
  • General-purpose power switching

Q & A

  1. What is the maximum collector-emitter voltage of the MJE270G?
    The maximum collector-emitter voltage (VCEO) is 100 Vdc.
  2. What is the continuous collector current rating of the MJE270G?
    The continuous collector current (IC) is 2.0 Adc.
  3. What is the peak collector current rating of the MJE270G?
    The peak collector current (ICM) is 4.0 Adc.
  4. What is the thermal resistance from junction to ambient for the MJE270G?
    The thermal resistance from junction to ambient (RJA) is 83.3 °C/W.
  5. Is the MJE270G Pb-Free and RoHS compliant?
    Yes, the MJE270G is Pb-Free and RoHS compliant.
  6. What is the DC current gain of the MJE270G at IC = 120 mA and VCE = 10 V?
    The DC current gain (hFE) at IC = 120 mA and VCE = 10 V is 1500 (Min).
  7. What is the collector-emitter saturation voltage of the MJE270G?
    The collector-emitter saturation voltage (VCE(sat)) at IC = 120 mA and IB = 1.2 mA is 3.0 Vdc.
  8. What is the base-emitter on voltage of the MJE270G?
    The base-emitter on voltage (VBE(on)) at IC = 120 mA and VCE = 10 V is 2.0 Vdc.
  9. What is the operating and storage junction temperature range for the MJE270G?
    The operating and storage junction temperature range (TJ, Tstg) is -65 to +150 °C.
  10. What are some common applications of the MJE270G?
    The MJE270G is commonly used in power amplifiers, motor control circuits, relay and solenoid drivers, high-current switching applications, and general-purpose power switching.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:3V @ 1.2mA, 120mA
Current - Collector Cutoff (Max):1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:1500 @ 120mA, 10V
Power - Max:1.5 W
Frequency - Transition:6MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126
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Same Series
MJE270
MJE270
TRANS NPN DARL 100V 2A TO126
MJE271
MJE271
TRANS PNP DARL 100V 2A TO126
MJE271G
MJE271G
TRANS PNP DARL 100V 2A TO126

Similar Products

Part Number MJE270G MJE271G MJE170G MJE200G MJE210G MJE270
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Obsolete Active Active Active Obsolete
Transistor Type NPN - Darlington PNP - Darlington PNP NPN PNP NPN - Darlington
Current - Collector (Ic) (Max) 2 A 2 A 3 A 5 A 5 A 2 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 40 V 40 V 40 V 100 V
Vce Saturation (Max) @ Ib, Ic 3V @ 1.2mA, 120mA 3V @ 1.2mA, 120mA 1.7V @ 600mA, 3A 1.8V @ 1A, 5A 1.8V @ 1A, 5A 3V @ 1.2mA, 120mA
Current - Collector Cutoff (Max) 1mA 1mA 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1500 @ 120mA, 10V 1500 @ 120mA, 10V 50 @ 100mA, 1V 45 @ 2A, 1V 45 @ 2A, 1V 1500 @ 120mA, 10V
Power - Max 1.5 W 1.5 W 1.5 W 15 W 15 W 1.5 W
Frequency - Transition 6MHz 6MHz 50MHz 65MHz 65MHz 6MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126 TO-126 TO-126 TO-126 TO-126 TO-126

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