MJE210G
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onsemi MJE210G

Manufacturer No:
MJE210G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS PNP 40V 5A TO126
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJE210G is a bipolar junction transistor (BJT) produced by onsemi. Although it has been discontinued and is no longer in production, it was widely used in various electronic applications due to its robust specifications and reliability. This transistor was part of the MJE210 series, known for its high voltage and current handling capabilities.

Key Specifications

ParameterSymbolValueUnit
Collector-Emitter VoltageVCEO40Vdc
Collector-Base VoltageVCB25Vdc
Emitter-Base VoltageVEBO5Vdc
Collector Current (Continuous)IC4A
Base Current (Continuous)IB1A
Power Dissipation (Total)Ptot40W
Operating Junction TemperatureTj-55 to 150°C

Key Features

  • High collector current and power dissipation capabilities.
  • High voltage ratings suitable for various power applications.
  • Robust construction for reliability in demanding environments.
  • Compliance with industry standards for safety and performance.

Applications

The MJE210G transistor was commonly used in power amplifiers, switching circuits, and other high-current applications. It was suitable for use in automotive systems, industrial control circuits, and consumer electronics where high reliability and performance were required.

Q & A

  1. What is the collector-emitter voltage rating of the MJE210G? The collector-emitter voltage rating is 40 Vdc.
  2. Is the MJE210G still in production? No, the MJE210G has been discontinued and is no longer in production.
  3. What is the maximum collector current for the MJE210G? The maximum collector current is 4 A.
  4. What is the operating junction temperature range for the MJE210G? The operating junction temperature range is -55°C to 150°C.
  5. What are some common applications for the MJE210G? Common applications include power amplifiers, switching circuits, automotive systems, and industrial control circuits.
  6. What is the power dissipation rating for the MJE210G? The total power dissipation rating is 40 W.
  7. Can the MJE210G be used in high-voltage applications? Yes, it is suitable for high-voltage applications due to its high voltage ratings.
  8. Where can I find detailed specifications for the MJE210G? Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Digi-Key and Mouser.
  9. Is the MJE210G compliant with industry standards? Yes, it complies with industry standards for safety and performance.
  10. What is the emitter-base voltage rating for the MJE210G? The emitter-base voltage rating is 5 Vdc.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):5 A
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:1.8V @ 1A, 5A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:45 @ 2A, 1V
Power - Max:15 W
Frequency - Transition:65MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126
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Same Series
MJE200G
MJE200G
TRANS NPN 40V 5A TO126
MJE210T
MJE210T
TRANS PNP 40V 5A TO126
MJE210TG
MJE210TG
TRANS PNP 40V 5A TO126

Similar Products

Part Number MJE210G MJE270G MJE210T MJE210TG MJE200G MJE210
Manufacturer onsemi onsemi onsemi onsemi onsemi STMicroelectronics
Product Status Active Active Obsolete Obsolete Active Obsolete
Transistor Type PNP NPN - Darlington PNP PNP NPN PNP
Current - Collector (Ic) (Max) 5 A 2 A 5 A 5 A 5 A 5 A
Voltage - Collector Emitter Breakdown (Max) 40 V 100 V 40 V 40 V 40 V 25 V
Vce Saturation (Max) @ Ib, Ic 1.8V @ 1A, 5A 3V @ 1.2mA, 120mA 1.8V @ 1A, 5A 1.8V @ 1A, 5A 1.8V @ 1A, 5A 1.8V @ 1A, 5A
Current - Collector Cutoff (Max) 100nA (ICBO) 1mA 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 45 @ 2A, 1V 1500 @ 120mA, 10V 45 @ 2A, 1V 45 @ 2A, 1V 45 @ 2A, 1V 45 @ 2A, 1V
Power - Max 15 W 1.5 W 15 W 15 W 15 W 1.5 W
Frequency - Transition 65MHz 6MHz 65MHz 65MHz 65MHz 65MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126 TO-126 TO-126 TO-126 TO-126 SOT-32-3

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