MCH3478-TL-W-Z
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onsemi MCH3478-TL-W-Z

Manufacturer No:
MCH3478-TL-W-Z
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 1.6A SC-70FL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MCH3478-TL-W-Z is a high-performance N-Channel Power MOSFET manufactured by ON Semiconductor. This device is part of the 1.8V drive series, designed for applications requiring low on-resistance and high-speed switching. The MOSFET is packaged in a 3-SMD, Flat Leads (MCPH3) package, which is Pb-free and halogen-free, making it compliant with environmental regulations.

Key Specifications

Parameter Symbol Conditions Ratings Unit
Drain to Source Voltage Vdss - 30 V
Gate to Source Voltage Vgss - ±12 V
Continuous Drain Current (DC) Id - 2 A
Pulse Drain Current Idp PW≤10μs, duty cycle≤1% 8 A
Allowable Power Dissipation Pd When mounted on ceramic substrate 0.8 W
Channel Temperature Tch - 150 °C
Static Drain to Source On-State Resistance Rds(on) Id=1A, Vgs=4.5V 125-165
Input Capacitance Ciss Vds=10V, f=1MHz 130 pF
Total Gate Charge Qg Vds=10V, Vgs=4.5V, Id=2A 1.7 nC

Key Features

  • Low ON-resistance: The MCH3478-TL-W-Z offers low on-resistance, making it suitable for high-efficiency applications.
  • Ultrahigh speed switching: This MOSFET is designed for high-speed switching, which is beneficial in applications requiring fast switching times.
  • 1.8V drive: The device can be driven with a low gate voltage of 1.8V, which is advantageous in battery-powered devices.
  • Halogen free compliance: The MOSFET is Pb-free and halogen-free, ensuring compliance with environmental regulations.
  • Protection diode: The device includes a built-in protection diode, enhancing its reliability and robustness.

Applications

The MCH3478-TL-W-Z is suitable for a variety of applications, including:

  • Power management: Ideal for power management in portable electronics, battery-powered devices, and power supplies.
  • Motor control: Used in motor control circuits due to its high current handling and low on-resistance.
  • Switching circuits: Suitable for high-speed switching applications such as DC-DC converters and switching power supplies.
  • Automotive systems: Can be used in automotive systems where high reliability and efficiency are required.

Q & A

  1. What is the maximum drain to source voltage of the MCH3478-TL-W-Z?

    The maximum drain to source voltage (Vdss) is 30V.

  2. What is the continuous drain current rating of this MOSFET?

    The continuous drain current (Id) is 2A at 25°C.

  3. What is the typical on-resistance of the MCH3478-TL-W-Z?

    The typical on-resistance (Rds(on)) is 125-165 mΩ at Id=1A and Vgs=4.5V.

  4. Is the MCH3478-TL-W-Z Pb-free and halogen-free?

    Yes, the device is Pb-free and halogen-free, making it environmentally compliant.

  5. What is the package type of the MCH3478-TL-W-Z?

    The device is packaged in a 3-SMD, Flat Leads (MCPH3) package.

  6. What is the maximum channel temperature of this MOSFET?

    The maximum channel temperature (Tch) is 150°C.

  7. Does the MCH3478-TL-W-Z have a built-in protection diode?

    Yes, the device includes a built-in protection diode.

  8. What is the input capacitance of the MCH3478-TL-W-Z?

    The input capacitance (Ciss) is 130 pF at Vds=10V and f=1MHz.

  9. What are the typical turn-on and turn-off delay times of this MOSFET?

    The turn-on delay time (td(on)) is 4.4 ns, and the turn-off delay time (td(off)) is 16 ns.

  10. What is the total gate charge of the MCH3478-TL-W-Z?

    The total gate charge (Qg) is 1.7 nC at Vds=10V, Vgs=4.5V, and Id=2A.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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