KSC2690AYSTU
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onsemi KSC2690AYSTU

Manufacturer No:
KSC2690AYSTU
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS NPN 160V 1.2A TO126-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The KSC2690AYSTU is an NPN epitaxial silicon transistor manufactured by onsemi. This device is designed for various electronic applications, particularly in audio frequency and high-frequency power amplifier roles. It is housed in the TO-126-3LD package, which is lead-free, making it compliant with current environmental regulations.

The transistor is known for its robust electrical characteristics and reliability, making it suitable for a range of general-purpose amplifier applications.

Key Specifications

Parameter Symbol Min Typ Max Units
Collector-Base Voltage VCBO 160 V
Collector-Emitter Voltage VCEO 160 V
Emitter-Base Voltage VEBO 5 V
Collector Current (DC) IC 1.2 A
Collector Current (Pulse) ICP 2.5 A
Base Current (DC) IB 0.3 A
Collector Dissipation PC 20 W
Junction Temperature TJ 150 °C
Storage Temperature TSTG -55 150 °C
DC Current Gain (hFE) hFE 35 60 105
Collector-Emitter Saturation Voltage VCE(sat) 0.4 0.7 V
Base-Emitter Saturation Voltage VBE(sat) 1 1.3 V
Current Gain Bandwidth Product fT 155 MHz

Key Features

  • Complement to KSA1220A: The KSC2690AYSTU is a complementary transistor to the KSA1220A, making it suitable for applications requiring paired transistors.
  • High Collector Current and Voltage Ratings: With a collector current of up to 1.2 A and a collector-emitter voltage of 160 V, this transistor is capable of handling high-power applications.
  • Low Saturation Voltages: The transistor features low collector-emitter and base-emitter saturation voltages, which are beneficial for reducing power losses in amplifier circuits.
  • High Current Gain Bandwidth Product: A current gain bandwidth product of 155 MHz indicates its suitability for high-frequency applications.
  • Lead-Free Packaging: The TO-126-3LD package is lead-free, ensuring compliance with environmental regulations.

Applications

  • Audio Frequency Amplifiers: The KSC2690AYSTU is well-suited for audio frequency amplifier applications due to its high current gain and low noise characteristics.
  • High Frequency Power Amplifiers: Its high current gain bandwidth product makes it ideal for high-frequency power amplifier applications.
  • General-Purpose Amplifiers: The transistor can be used in various general-purpose amplifier circuits requiring high reliability and performance.

Q & A

  1. What is the maximum collector current of the KSC2690AYSTU?

    The maximum collector current (DC) is 1.2 A, and the maximum collector current (pulse) is 2.5 A.

  2. What is the collector-emitter voltage rating of the KSC2690AYSTU?

    The collector-emitter voltage rating is 160 V.

  3. What is the junction temperature range of the KSC2690AYSTU?

    The junction temperature range is up to 150°C.

  4. What is the current gain bandwidth product of the KSC2690AYSTU?

    The current gain bandwidth product is 155 MHz.

  5. Is the KSC2690AYSTU lead-free?

    Yes, the KSC2690AYSTU is housed in a lead-free TO-126-3LD package.

  6. What are the typical applications of the KSC2690AYSTU?

    The KSC2690AYSTU is typically used in audio frequency amplifiers, high-frequency power amplifiers, and general-purpose amplifier applications.

  7. What is the storage temperature range for the KSC2690AYSTU?

    The storage temperature range is from -55°C to 150°C.

  8. What is the base-emitter saturation voltage of the KSC2690AYSTU?

    The base-emitter saturation voltage is between 1 V and 1.3 V.

  9. Can the KSC2690AYSTU be used in high-power applications?

    Yes, the KSC2690AYSTU can handle high-power applications due to its high collector current and voltage ratings.

  10. Is the KSC2690AYSTU suitable for life support systems or medical devices?

    No, the KSC2690AYSTU is not designed or intended for use as a critical component in life support systems or any FDA Class 3 medical devices.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1.2 A
Voltage - Collector Emitter Breakdown (Max):160 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 200mA, 1A
Current - Collector Cutoff (Max):1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 300mA, 5V
Power - Max:1.2 W
Frequency - Transition:155MHz
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126-3
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KSC2690AYSTSTU
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Similar Products

Part Number KSC2690AYSTU KSC2690YSTU
Manufacturer onsemi Fairchild Semiconductor
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 1.2 A 1.2 A
Voltage - Collector Emitter Breakdown (Max) 160 V 120 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 200mA, 1A 700mV @ 200mA, 1A
Current - Collector Cutoff (Max) 1µA (ICBO) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 300mA, 5V 160 @ 300mA, 5V
Power - Max 1.2 W 1.2 W
Frequency - Transition 155MHz 155MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126-3 TO-126-3

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