Overview
The KSC2690AYSTU is an NPN epitaxial silicon transistor manufactured by onsemi. This device is designed for various electronic applications, particularly in audio frequency and high-frequency power amplifier roles. It is housed in the TO-126-3LD package, which is lead-free, making it compliant with current environmental regulations.
The transistor is known for its robust electrical characteristics and reliability, making it suitable for a range of general-purpose amplifier applications.
Key Specifications
Parameter | Symbol | Min | Typ | Max | Units |
---|---|---|---|---|---|
Collector-Base Voltage | VCBO | 160 | V | ||
Collector-Emitter Voltage | VCEO | 160 | V | ||
Emitter-Base Voltage | VEBO | 5 | V | ||
Collector Current (DC) | IC | 1.2 | A | ||
Collector Current (Pulse) | ICP | 2.5 | A | ||
Base Current (DC) | IB | 0.3 | A | ||
Collector Dissipation | PC | 20 | W | ||
Junction Temperature | TJ | 150 | °C | ||
Storage Temperature | TSTG | -55 | 150 | °C | |
DC Current Gain (hFE) | hFE | 35 | 60 | 105 | |
Collector-Emitter Saturation Voltage | VCE(sat) | 0.4 | 0.7 | V | |
Base-Emitter Saturation Voltage | VBE(sat) | 1 | 1.3 | V | |
Current Gain Bandwidth Product | fT | 155 | MHz |
Key Features
- Complement to KSA1220A: The KSC2690AYSTU is a complementary transistor to the KSA1220A, making it suitable for applications requiring paired transistors.
- High Collector Current and Voltage Ratings: With a collector current of up to 1.2 A and a collector-emitter voltage of 160 V, this transistor is capable of handling high-power applications.
- Low Saturation Voltages: The transistor features low collector-emitter and base-emitter saturation voltages, which are beneficial for reducing power losses in amplifier circuits.
- High Current Gain Bandwidth Product: A current gain bandwidth product of 155 MHz indicates its suitability for high-frequency applications.
- Lead-Free Packaging: The TO-126-3LD package is lead-free, ensuring compliance with environmental regulations.
Applications
- Audio Frequency Amplifiers: The KSC2690AYSTU is well-suited for audio frequency amplifier applications due to its high current gain and low noise characteristics.
- High Frequency Power Amplifiers: Its high current gain bandwidth product makes it ideal for high-frequency power amplifier applications.
- General-Purpose Amplifiers: The transistor can be used in various general-purpose amplifier circuits requiring high reliability and performance.
Q & A
- What is the maximum collector current of the KSC2690AYSTU?
The maximum collector current (DC) is 1.2 A, and the maximum collector current (pulse) is 2.5 A.
- What is the collector-emitter voltage rating of the KSC2690AYSTU?
The collector-emitter voltage rating is 160 V.
- What is the junction temperature range of the KSC2690AYSTU?
The junction temperature range is up to 150°C.
- What is the current gain bandwidth product of the KSC2690AYSTU?
The current gain bandwidth product is 155 MHz.
- Is the KSC2690AYSTU lead-free?
Yes, the KSC2690AYSTU is housed in a lead-free TO-126-3LD package.
- What are the typical applications of the KSC2690AYSTU?
The KSC2690AYSTU is typically used in audio frequency amplifiers, high-frequency power amplifiers, and general-purpose amplifier applications.
- What is the storage temperature range for the KSC2690AYSTU?
The storage temperature range is from -55°C to 150°C.
- What is the base-emitter saturation voltage of the KSC2690AYSTU?
The base-emitter saturation voltage is between 1 V and 1.3 V.
- Can the KSC2690AYSTU be used in high-power applications?
Yes, the KSC2690AYSTU can handle high-power applications due to its high collector current and voltage ratings.
- Is the KSC2690AYSTU suitable for life support systems or medical devices?
No, the KSC2690AYSTU is not designed or intended for use as a critical component in life support systems or any FDA Class 3 medical devices.