IRF540N_R4942
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onsemi IRF540N_R4942

Manufacturer No:
IRF540N_R4942
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 100V 33A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF540N_R4942 is a high-performance N-channel power MOSFET produced by onsemi. This device is part of the HEXFET family and is known for its robust and reliable operation in various power control applications. With a drain-source breakdown voltage (Vds) of 100V and a continuous drain current (Id) of 33A, it is well-suited for high-power switching circuits. The MOSFET features a low on-resistance (Rds(on)) of 0.052Ω, which minimizes power losses and enhances efficiency.

Key Specifications

Parameter Value Units
Manufacturer onsemi
Package TO-220AB
Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 33 A
Rds On - Drain-Source Resistance 0.052 Ω
Vgs - Gate-Source Voltage -20 to +20 V
Minimum Operating Temperature -55 °C
Maximum Operating Temperature 175 °C
Power Dissipation (Max) 120 W
Channel Mode Enhancement
Typical Turn-On Delay Time 15 ns
Typical Turn-Off Delay Time 40 ns

Key Features

  • Advanced Process Technology: The IRF540N_R4942 benefits from advanced process technology, ensuring high performance and reliability.
  • Fast Switching: With fast switching times, this MOSFET is ideal for applications requiring quick on and off transitions.
  • Fully Avalanche Rated: The device is fully avalanche rated, making it suitable for applications where high energy pulses may occur.
  • Low On-Resistance: The low Rds(on) of 0.052Ω minimizes power losses and enhances overall system efficiency.
  • High Operating Temperature: The MOSFET can operate up to 175°C, making it suitable for high-temperature environments.
  • Dynamic dv/dt Rating: The device has a dynamic dv/dt rating, ensuring robust performance under varying voltage conditions.

Applications

  • Power Supply Systems: The IRF540N_R4942 is commonly used in power supply systems due to its high current handling and low on-resistance.
  • Motor Control: It is suitable for motor control applications, including DC and AC motor drives.
  • Switching Circuits: The MOSFET is ideal for high-power switching circuits, such as inverter and converter applications.
  • Automotive Systems: Its robustness and high operating temperature make it suitable for use in automotive systems.
  • Industrial Control Systems: It is used in various industrial control systems where high reliability and performance are required.

Q & A

  1. What is the maximum drain-source breakdown voltage of the IRF540N_R4942?

    The maximum drain-source breakdown voltage (Vds) is 100V.

  2. What is the continuous drain current rating of the IRF540N_R4942?

    The continuous drain current (Id) is 33A.

  3. What is the typical on-resistance (Rds(on)) of the IRF540N_R4942?

    The typical on-resistance (Rds(on)) is 0.052Ω.

  4. What is the operating temperature range of the IRF540N_R4942?

    The operating temperature range is from -55°C to 175°C.

  5. Is the IRF540N_R4942 fully avalanche rated?

    Yes, the IRF540N_R4942 is fully avalanche rated.

  6. What is the typical turn-on delay time of the IRF540N_R4942?

    The typical turn-on delay time is 15 ns.

  7. What is the typical turn-off delay time of the IRF540N_R4942?

    The typical turn-off delay time is 40 ns.

  8. What are some common applications of the IRF540N_R4942?

    Common applications include power supply systems, motor control, switching circuits, automotive systems, and industrial control systems.

  9. What package type does the IRF540N_R4942 come in?

    The IRF540N_R4942 comes in a TO-220AB package.

  10. Is the IRF540N_R4942 suitable for high-temperature environments?

    Yes, it is suitable for high-temperature environments up to 175°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:40mOhm @ 33A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:79 nC @ 20 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1220 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):120W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number IRF540N_R4942 IRF530N_R4942
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc) 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 40mOhm @ 33A, 10V 64mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 79 nC @ 20 V 52 nC @ 20 V
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 1220 pF @ 25 V 790 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 120W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3

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