FQD3P50TM-F085
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onsemi FQD3P50TM-F085

Manufacturer No:
FQD3P50TM-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 500V 2.1A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQD3P50TM-F085 is a P-Channel enhancement mode power MOSFET produced by onsemi, utilizing their proprietary planar stripe and DMOS technology. This advanced technology is designed to reduce on-state resistance and provide superior switching performance along with high avalanche energy strength. The device is suitable for a variety of high-performance applications, including switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDSS)-500V
Continuous Drain Current (ID) at TC = 25°C-2.1A
Continuous Drain Current (ID) at TC = 100°C-1.33A
Pulsed Drain Current (IDM)-8.4A
Gate-Source Voltage (VGSS)±30V
Single Pulsed Avalanche Energy (EAS)250mJ
Static Drain-Source On-Resistance (RDS(on)) at VGS = -10 V, ID = -1.05 A4.9Ω
Gate Threshold Voltage (VGS(th))-3.0 to -5.0V
Thermal Resistance, Junction-to-Case (RθJC)2.5°C/W
Thermal Resistance, Junction-to-Ambient (RθJA)50°C/W
Operating and Storage Temperature Range-55 to +150°C

Key Features

  • Low on-state resistance (RDS(on) = 4.9 Ω max. at VGS = -10 V, ID = -1.05 A)
  • Low gate charge (Typ. 18 nC)
  • Low Crss (Typ. 9.5 pF)
  • 100% avalanche tested
  • Pb-free and RoHS compliant
  • Superior switching performance and high avalanche energy strength

Applications

  • Switched mode power supplies
  • Active power factor correction (PFC)
  • Electronic lamp ballasts

Q & A

  1. What is the maximum drain-source voltage of the FQD3P50TM-F085? The maximum drain-source voltage is -500 V.
  2. What is the continuous drain current at TC = 25°C? The continuous drain current at TC = 25°C is -2.1 A.
  3. What is the gate-source voltage range? The gate-source voltage range is ±30 V.
  4. What is the single pulsed avalanche energy? The single pulsed avalanche energy is 250 mJ.
  5. What is the thermal resistance from junction to case? The thermal resistance from junction to case is 2.5 °C/W.
  6. Is the FQD3P50TM-F085 Pb-free and RoHS compliant? Yes, the device is Pb-free and RoHS compliant.
  7. What are the typical applications of the FQD3P50TM-F085? Typical applications include switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
  8. What is the gate threshold voltage range? The gate threshold voltage range is -3.0 to -5.0 V.
  9. What is the maximum operating temperature? The maximum operating temperature is 150°C.
  10. What is the package type of the FQD3P50TM-F085? The device is packaged in a DPAK3 case.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.9Ohm @ 1.05A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:660 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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In Stock

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250

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